VUO52-20NO1
3~ Rectifier Bridge
Standard Rectifier Module
4/5 6 1/2810
Part number
VUO52-20NO1
Features / Ad vantages: Applications: Package:
● Package with DCB ceramic
● Reduced weight
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
V1-A-Pack
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
RRM
2000
I60
FSM
350
DAV
V=V
A
A
=
=
I
3~
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130305bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO52-20NO1
V = V
A²s
A²s
A²s
A²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.13
R1.3 K/W
R
min.
60
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
110
P
tot
95 WT = 25°C
C
RK/W0.3
20
2000
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Unit
1.44
T = 25°C
VJ
150
V
F0
V0.83T = °C
VJ
150
r
F
11.5 mΩ
V1.07T = °C
VJ
I = A
F
V
20
1.50
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V2000
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
7
j
unction capacitance V = V;700 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
350
380
450
425
A
A
A
A
300
320
615
600
2000
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
2100
IXYS reserves the right to change limits, conditions and dimensions. 20130305bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO52-20NO1
Ratings
Part Number (Typ)
yywwA
Date Code Location
Lot No.:
2D Data Matrix
VUO52-12NO1 V1-A-Pack 1200
Package
T
VJ
°C
M
D
Nm2.5
mounting torque 2
T
stg
°C125
storage temperature -40
Weight g37
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.0
12.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 100 A
per terminal
150-40
terminal to terminal
VUO52-14NO1
VUO52-16NO1
V1-A-Pack
V1-A-Pack
1400
1600
VUO52-18NO1
VUO52-22NO1
VUO34-16NO1
VUO34-18NO1
V1-A-Pack
V1-A-Pack
V1-A-Pack
V1-A-Pack
1800
2200
1600
1800
V
1-A-Pack
Similar Part Package Voltage class
VUO52-08NO1 V1-A-Pack 800
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUO52-20NO1 463329Box 10VUO52-20NO1Standard
3000
3600
ISOL
threshold voltage V0.83
mΩ
V
0 max
R
0 max
slope resistance * 10.2
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
150°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130305bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO52-20NO1
4/5 6 1/2810
Outlines V1-A-Pack
IXYS reserves the right to change limits, conditions and dimensions. 20130305bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO52-20NO1
011
100
1000
V
F
[V]
I
F
[A]
0.4 0.8 1.2 1.6 2.0
0
20
40
60
80
10
-3
10
-2
10
-1
10
0
100
150
200
250
300
1 10 100 1000 10000
0.0
0.4
0.8
1.2
1.6
0 25 50 75 100 125 1500 5 10 15 20 25
0
5
10
15
20
25
30
0 25 50 75 100 125 150
0
20
40
60
80
I
FSM
[A]
t[s] t[ms]
I
2
t
[A
2
s]
P
tot
[W]
I
dAVM
[A] T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t[ms]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
tversustimeperdiode
Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs.
case temperature
Fig. 6 Transient thermal impedance junction to case
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 0.06070 0.008
20.173 0.05
3 0.3005 0.06
40.463 0.3
5 0.3028 0.15
0.8 x V
RRM
50 Hz
T
VJ
=25°C
T
VJ
= 125°C
150°C
T
VJ
=130°C
T
VJ
=45°C
T
VJ
= 130°C
T
VJ
=45°C
V
R
= 0 V
R
thJA
:
0.6 KW
0.8 KW
1KW
2KW
4KW
8KW
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130305bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
