VUO52-20NO1 3~ Rectifier Standard Rectifier Module VRRM = 2000 V I DAV = 60 A I FSM = 350 A 3~ Rectifier Bridge Part number VUO52-20NO1 4/5 6 8 10 1/2 Features / Advantages: Applications: Package: V1-A-Pack Package with DCB ceramic Reduced weight Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Diode for main rectification For three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Height: 17 mm Base plate: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130305b VUO52-20NO1 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 2100 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 2000 V IR reverse current, drain current VF VR = 2000 V TVJ = 25C 40 A TVJ = 150C 1.5 mA TVJ = 25C 1.13 V 1.44 V 1.07 V 20 A IF = 60 A IF = 20 A IF = 60 A TVJ = 125C TC = 110C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1.50 V T VJ = 150 C 60 A TVJ = 150 C 0.83 V d= for power loss calculation only Ptot typ. VR = 2000 V IF = forward voltage drop min. 11.5 m 1.3 K/W 0.3 K/W TC = 25C 95 W t = 10 ms; (50 Hz), sine TVJ = 45C 350 A t = 8,3 ms; (60 Hz), sine VR = 0 V 380 A t = 10 ms; (50 Hz), sine TVJ = 150 C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 320 A t = 10 ms; (50 Hz), sine TVJ = 45C 615 As t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 600 As TVJ = 150 C 450 As 425 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 700 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 7 pF 20130305b VUO52-20NO1 Package Ratings V1-A-Pack Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 100 Unit A -40 125 C -40 150 C 2.5 Nm Weight MD 37 2 mounting torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage t = 1 minute g 50/60 Hz, RMS; IISOL 1 mA Date Code Location yywwA Part Number (Typ) Lot No.: 2D Data Matrix Ordering Standard Part Number VUO52-20NO1 Similar Part VUO52-08NO1 VUO52-12NO1 VUO52-14NO1 VUO52-16NO1 VUO52-18NO1 VUO52-22NO1 VUO34-16NO1 VUO34-18NO1 Equivalent Circuits for Simulation I V0 R0 Marking on Product VUO52-20NO1 Package V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack V1-A-Pack * on die level Delivery Mode Box Code No. 463329 Voltage class 800 1200 1400 1600 1800 2200 1600 1800 T VJ = 150C Rectifier V 0 max threshold voltage 0.83 V R 0 max slope resistance * 10.2 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130305b VUO52-20NO1 Outlines V1-A-Pack 4/5 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 6 8 10 1/2 Data according to IEC 60747and per semiconductor unless otherwise specified 20130305b VUO52-20NO1 Rectifier 80 300 60 250 50 Hz 0.8 x V RRM 1000 VR = 0 V TVJ = 45C IF 2 It IFSM TVJ = 45C 200 40 [A] [A] 2 [A s] TVJ = 130C TVJ = 130C TVJ = 125C 150C 20 150 TVJ = 25C 0 0.4 0.8 1.2 1.6 100 10-3 2.0 100 10-2 10-1 100 1 10 VF [V] t [s] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I t versus time per diode 30 20 Ptot 80 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 25 2 DC = 0.6 KW 1 0.8 KW 15 1 KW 2 KW 4 KW 8 KW 60 0.4 IF(AV)M [A] [W] 0.5 0.33 0.17 40 0.08 10 20 5 0 0 0 5 10 15 20 25 0 25 50 75 100 125 0 150 25 50 TA [C] IdAVM [A] 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature 1.6 Constants for ZthJC calculation: 1.2 ZthJC 0.8 [K/W] 0.4 i Rth (K/W) ti (s) 1 0.06070 0.008 2 0.173 0.05 3 0.3005 0.06 4 0.463 0.3 5 0.3028 0.15 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130305b