1
Publication date: December 2003 SJJ00174BED
Composite Transistors
XP0421M
Silicon NPN epitaxial planar type
For switching/digital circuits
■Features
•Two elements incorporated into one package
(Transistors with built-in resistor)
•Reduction of the mounting area and assembly cost by one half
■Basic Part Number
•UNR221M (UN221M) × 2
■Absolute Maximum Ratings Ta = 25°C
Internal Connection
Marking Symbol: FH
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 50 V
Collector-emitter voltage (Base open) VCEO 50 V
Collector current IC100 mA
Total power dissipation PT150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
4
Tr1
Tr2
56
132
Unit: mm
1: Emitter (Tr1) 4: Emitter (Tr2)
2: Base (Tr1) 5: Base (Tr2)
3: Collector (Tr2) 6: Collector (Tr1)
EIAJ : SC-88 SMini6-G1 Package
5˚
10˚
2.1±0.1
1.25±0.10
13
2
0.2±0.05 0.12+0.05
–0.02
0.2±0.1
(0.425)
1.3±0.1
2.0±0.1
0 to 0.1
0.9±0.1
0.9+0.2
–0.1
654
(0.65) (0.65)
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 050V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 050V
Collector-base cutoff current (Emitter open)
ICBO VCB = 50 V, IE = 0 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = 50 V, IB = 0 0.5 µA
Emitter-base cutoff current (Collector open)
IEBO VEB = 6 V, IC = 0 0.2 mA
Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 80
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.3 mA 0.25 V
Output voltage high-level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ4.9 V
Output voltage low-level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ0.2 V
Input resistance R1−30% 2.2 +30% kΩ
Resistance ratio R1 / R20.047
Transition frequency fTVCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz
XP0421M
2SJJ00174BED
hFE ICCob VCB IO VIN
PT TaIC VCE VCE(sat) IC
VIN IO
0 16040 12080
0
250
100
200
50
150
Total power dissipation PT (mW)
Ambient temperature Ta (°C)
0
012210486
140
120
100
80
60
40
20
I
B
= 1.0 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
0.1 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
0.01
0.1
1
1 10 100
I
C
/ I
B
= 10
0.1
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
0
1 10 100
100
200
300
400
1
000
VCE = 10 V
25°C
−25°C
Ta = 75°C
Forward current transfer ratio hFE
Collector current IC (mA)
1
0 102030
10
40
f = 1 MHz
T
a
= 25°C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
Collector-base voltage V
CB
(V)
012
V
O
= 5 V
T
a
= 25°C
1
10
100
1
000
Output current IO (mA)
Input voltage VIN (V)
0.1
0.1
100
1 10 100
V
O
= 0.2 V
T
a
= 25°C
1
10
Input voltage V
IN
(V)
Output current I
O
(mA)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
