Cascadable Broadband GaAs MMIC Amplifier NBB-310 DC-12 GHz 6000038 Rev. A Features 1 * * * * * Reliable Low-Cost HBT Design 12 dB Gain High Output Power Design Single Power Supply Operation 50 Input/Output Matched for High-Frequency Utilization. Description RF Nitro's NBB-310 Cascadable Broadband GaInP/GaAs MMIC amplifier is a low-cost highperformance solution for your general-purpose RF and microwave amplification needs. This 50-ohm gain block is based upon a reliable HBT (Heterojunction Bipolar Transistor) proprietary MMIC design, providing unsurpassed performance for small-signal applications. in 1,000 or 3,000 piece-per-reel quantities. Connectorized evaluation board designs optimized for high frequency are also available for characterization purposes (NBB-310-E). Applications * Narrow & broadband commercial & military radio designs. * Linear & saturated amplifier applications. * Gain stage or driver amplifiers utilized in microwave radio and optical designs such as PTP, PMP, LMDS, UNII, VSAT, WLAN, cellular, and DWDM systems. Package 4-Lead Ceramic Micro-X The NBB-310 is packaged in a low-cost, hermetic, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. The NBB-310 incorporates external dc decoupling capacitors, which limit the low-frequency response. Designed with an external bias resistor, the NBB-310 provides flexibility and stability to your requirement. The NBB-310 is available in either packaged or chip (NBB-310-D) form, where its gold metalization is ideal for hybrid circuit designs. Packaged parts are available Electrical Specifications Vd= +5.0V, Icc = 50 mA, Zo = 50 , TA = +25 C. Parameter Small Signal Power Gain, S21 Gain Flatness, GF Input VSWR Output VSWR Bandwidth, BW Output Power @ 1-dB Compression, P1dB Noise Figure, NF 3rd Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, Vd Test Conditions f=0.1 to 1.0 GHz f=1.0 to 4.0 GHz f=4.0 to 8.0 GHz f=8.0 to 12.0 GHz f=0.1 to 8.0 GHz f=0.1 to 7.0 GHz f=7.0 to 10.0 GHz f=10.0 to 12.0 GHz F=0.1 to 12.0 GHz BW3 (3dB) f=2.0 GHz f=6.0 GHz f=8.0 GHz f=12.0 GHz f=3.0 GHz f=2.0 GHz f=0.1 to 12.0 GHz . T 10420-F Harris Oaks Blvd., Charlotte, NC 28269 GHz dBm dBm dBm dBm dB dBm dB V Min. 12.5 12.5 12.0 10.0 4.7 dB / C Gain Temperature Coefficient GT Units dB dB dB dB dB Phone: (704) 596-9060 Fax: (704) 596-0950 Typ. 13.0 13.0 12.5 10.5 +0.6 1.25 1.40 (avg) 2.0 (avg) 1.20 12.0 +15.5 +15.0 +15.0 +11.5 5.5 +28.9 -15 5.0 Max. 5.3 -0.0015 Web: www.rfnitro.com Cascadable Broadband GaAs MMIC Amplifier 6000038 Rev. A Ordering Information Absolute Maximum Ratings Exceeding any one or a combination of these limits may cause permanent damage. Parameter Absolute Maximum RF Input Power +20 dBm Power Dissipation 350 mW Device Current 70 mA Channel Temperature 200o C Operating -45 C to +85 C Temperature Storage Temperature -65 C to +150 C Part Number NBB-310 NBB-310T1 NBB-310T3 NBB-310-D NBB-310-E Package Low-Cost 4 Lead Ceramic Pkg. Tape & Reel, 1000 Pieces Tape & Reel, 3000 Pieces NBB-310 Chip Form NBB-310 Evaluation Board Typical Bias Configuration Application notes related to biasing circuit, device footprint, and thermal considerations are available upon request. Vcc MTTF vs. Temperature @ Icc = 50 mA Case Temperature 85 C Junction Temperature 142 Rcc MTTF (hrs) 4 >1,000,000 L choke (optional) 1 In C block 2 Thermal Resistance Out C block 3 Vd=5.0 V Thermal Resistance, at any temperature (in C/Watt) can be estimated by the following equation: JC(C/Watt) = 265[TJ(C) /142] Thermal Resistance JC 265C/Watt Typical Recommended Bias Resistor Values Supply Voltage, Vcc (V) 8 10 12 15 20 Bias Resistor, Rcc () 60 100 140 200 300 Typical S-Parameter Data Vd= +5.0V, Icc = 50 mA, Zo = 50 , TA = +25 C. Freq. GHz S11 (dB) S11 Mag S11 Ang S21 (dB) S21 Mag S21 Ang S12 (dB) S12 Mag S12 Ang S22 (dB) S22 Mag S22 Ang 0.1 -18.8 0.11 177.8 12.7 4.33 176.7 -17.6 0.13 -10.5 -31.2 0.03 -146.3 1.0 -21.0 0.09 154.5 12.9 4.45 171.7 -17.0 0.14 1.3 -41.7 0.01 -70.5 2.0 -21.6 0.08 126.5 13.0 4.47 162.5 -16.9 0.14 4.6 -38.0 0.01 171.4 4.0 -22.2 0.08 78.8 13.2 4.57 142.9 -16.6 0.15 9.2 -25.7 0.05 91.5 6.0 -22.6 0.07 54.4 13.3 4.60 121.1 -16.3 0.15 12.9 -22.8 0.07 26.6 8.0 -16.3 0.15 17.46 13.0 4.45 96.7 -15.7 0.16 14.3 -24.9 0.06 -37.9 10.0 -11.6 0.26 -45.7 11.8 3.89 72.3 -15.4 0.17 14.2 -37.1 0.01 -102.9 12.0 -8.3 0.38 -120.2 10.5 3.36 55.0 -14.8 0.18 16.0 -21.3 0.09 -165.2 14.0 -7.0 0.45 179.9 8.7 2.73 38.9 -14.6 0.19 16.5 -20.4 0.10 154.1 10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com 1 Cascadable Broadband GaAs MMIC Amplifier 6000038 Rev. A Typical Performance Measurements TA = +25 C, Vd = +5.0 V S11 vs Icc (mA) 20mA -5 10 S21 (dB) S11 (dB) 70 mA 12 -10 1 S21 vs Icc (mA) 14 0 -15 70mA -20 20 mA 8 6 4 -25 2 -30 0 0 -35 0 5 10 15 Frequency (GHz) 5 S12 vs Icc (mA) -10 10 15 20 Frequency (GHz) 20 S22 vs Icc (mA) 0 20mA -10 20mA -14 S22 (dB) S12 (dB) -12 -16 -20 -30 -40 70mA 70mA -18 -50 -20 -60 0 5 10 15 Frequency (GHz) 20 0 5 Pout/Gain vs Pin @ 6GHz 15 20 Pout/Gain vs Pin @ 14GHz 20 15 Icc=50 mA Vd=5.0 V 15 Pout (dBm) / Gain (dB) Pout (dBm) / Gain (dB) 10 Frequency (GHz) 10 5 Icc=50 mA Vd=5.0 V 10 5 0 0 -6 -4 -2 0 2 Pin (dBm) 4 6 10420-F Harris Oaks Blvd., Charlotte, NC 28269 8 -8 Phone: (704) 596-9060 -4 0 Pin (dBm) Fax: (704) 596-0950 4 8 Web: www.rfnitro.com Cascadable Broadband GaAs MMIC Amplifier 6000038 Rev. A Tape & Reel Dimensions Tape & Reel Available in: * 1,000 piece per reel @ 13" reel diameter, 4" hub diameter. * 3,000 piece per reel @ 13" reel diameter, 4" hub diameter. 1 Package Outline Drawing 4-Lead Ceramic Micro-X 45 UNITS: INCHES (mm) 2 0.070 (1.78) 1 N6 0.040 (1.02) 0.055 (1.40) 3 0.020 0.200 sq (5.08) 10420-F Harris Oaks Blvd., Charlotte, NC 28269 4 0.005 (0.13) Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com Cascadable Broadband GaAs MMIC Amplifier 6000038 Rev. A NBB-310-D (Die) Chip Dimensions: 0.017" X 0.017" X 0.004" Back of chip is ground. UNITS: INCHES [mm] 1 OUTPUT INPUT 0.0170.001 [0.440.03] GND VIA 0.0170.001 [0.440.03] 0.0040.001 [0.100.03] Application Notes Die Attach: The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip. Wire Bonding: Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable practices for wire bonding. Assembly Procedure: Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metalization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metalized area of the substrate. A 150C cure for 1 hour is necessary. Recommended epoxy is Ablebond 84-1LMI from Ablestik. Bonding Temperature (Wedge or Ball): It is recommended that the heater block temperature be set 160C +/- 10C. ESD Sensitive Device RF Nitro Communications has furnished the information contained within this document to the best of our ability and accuracy. However, we reserve the right to make changes to our products, and supporting data, at our sole discretion without notice. 10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com