Document Number: 94418 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 22-Apr-08 1
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 27 A
VSK.26..PbF Series
Vishay High Power Products
MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAKTM modules combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu baseplate
allows an easier mounting on the majority of heatsink with
increased tolerance of surface roughness and improved
thermal spread. The Generation 5 of AAP modules is
manufactured without hard mold, eliminating in this way any
possible direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.
FEATURES
• High voltage
• Industrial standard package
• Thick copper baseplate
• UL E78996 approved
• 3500 VRMS isolating voltage
• Totally lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Up to 1600 V
• Fully compatible TO-240AA
• High surge capability
• Easy mounting on heatsink
•Al
203 DBC insulator
• Heatsink grounded
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery chargers.
PRODUCT SUMMARY
IT(AV) or IF(AV) 27 A
ADD-A-PAK
TM
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IT(AV) or IF(AV) 85 °C 27
A
IO(RMS) As AC switch 60
ITSM,
IFSM
50 Hz 400
60 Hz 420
I2t
50 Hz 800
A2s
60 Hz 730
I2√t8000 A2√s
VRRM Range 400 to 1600 V
TStg - 40 to 125 °C
TJ
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94418
2Revision: 22-Apr-08
VSK.26..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 27 A
ELECTRICAL SPECIFICATIONS
Notes
(1) I2t for time tx = I2√t x √tx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7 % x π x IAV < I < π x IAV
(4) I > π x IAV
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
IRRM,
IDRM
AT 125 °C
mA
VSK.26
04 400 500 400
15
06 600 700 600
08 800 900 800
10 1000 1100 1000
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
(thyristors) IT(AV) 180° conduction, half sine wave,
TC = 85 °C 27
A
Maximum average forward current
(diodes) IF(AV)
Maximum continuous RMS on-state current
as AC switch IO(RMS) 60
Maximum peak, one-cycle
non-repetitive on-state
or forward current
ITSM
or
IFSM
t = 10 ms No voltage
reapplied Sinusoidal
half wave,
initial TJ = TJ maximum
400
t = 8.3 ms 420
t = 10 ms 100 % VRRM
reapplied
335
t = 8.3 ms 350
t = 10 ms TJ = 25 °C, no voltage reapplied 470
t = 8.3 ms 490
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied Initial TJ = TJ maximum
800
A2s
t = 8.3 ms 730
t = 10 ms 100 % VRRM
reapplied
560
t = 8.3 ms 510
t = 10 ms TJ = 25 °C, no voltage reapplied 1100
t = 8.3 ms 1000
Maximum I2√t for fusing I2√t (1) t = 0.1 to 10 ms, no voltage reapplied 8000 A2√s
Maximum value or threshold voltage VT(TO) (2) Low level (3)
TJ = TJ maximum 0.92 V
High level (4) 0.95
Maximum value of on-state
slope resistance rt (2) Low level (3)
TJ = TJ maximum 12.11 mΩ
High level (4) 11.82
Maximum peak on-state or forward voltage VTM ITM = π x IT(AV) TJ = 25 °C 1.95 V
VFM IFM = π x IF(AV)
Maximum non-repetitive rate of
rise of turned on current dI/dt TJ = 25 °C, from 0.67 VDRM,
ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 µs, tp > 6 µs 150 A/µs
Maximum holding current IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit 200 mA
Maximum latching current ILTJ = 25 °C, anode supply = 6 V, resistive load 400
or
I(RMS) I(RMS)
Document Number: 94418 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 22-Apr-08 3
VSK.26..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 27 A
Vishay High Power Products
Note
(1) Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT26/16AS90
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 10 W
Maximum average gate power PG(AV) 2.5
Maximum peak gate current IGM 2.5 A
Maximum peak negative gate voltage - VGM 10
V
Maximum gate voltage required to trigger VGT
TJ = - 40 °C Anode supply = 6 V
resistive load
4.0
TJ = 25 °C 2.5
TJ = 125 °C 1.7
Maximum gate current required to trigger IGT
TJ = - 40 °C Anode supply = 6 V
resistive load
270
mATJ = 25 °C 150
TJ = 125 °C 80
Maximum gate voltage that will not trigger VGD TJ = 125 °C, rated VDRM applied 0.25 V
Maximum gate current that will not trigger IGD TJ = 125 °C, rated VDRM applied 6 mA
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit 15 mA
RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted 2500 (1 min)
3500 (1 s) V
Maximum critical rate of rise of off-state voltage dV/dt (1) TJ = 125 °C, linear to 0.67 VDRM 500 V/µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction operating and storage
temperature range TJ, TStg - 40 to 125 °C
Maximum internal thermal resistance,
junction to case per module RthJC DC operation 0.31
K/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface flat, smooth and greased 0.1
Mounting torque ± 10 %
to heatsink A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread
of the compound.
5
Nm
busbar 3
Approximate weight 110 g
4oz.
Case style JEDEC TO-240AA
ΔR CONDUCTION PER JUNCTION
DEVICES SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.26 0.23 0.27 0.34 0.48 0.73 0.17 0.28 0.36 0.49 0.73 °C/W
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94418
4Revision: 22-Apr-08
VSK.26..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 27 A
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
80
90
100
110
120
130
0 5 10 15 20 25 30
Maximum Allowable Case Temperature (°C)
30° 60° 90° 120° 180°
Average On-state Current (A)
Conduction Angle
VSK.26.. Se rie s
R (DC) = 0.62 K/ W
thJC
80
90
100
110
120
130
01020304050
DC
30°
60°
90°
120°
180°
Averag e On-stat e Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
VSK.26.. Series
R (DC) = 0.62 K/ W
thJC
0
10
20
30
40
50
0 5 10 15 20 25 30
180°
120°
90°
60°
30°
RM S Lim it
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.26.. Serie s
Pe r Jun c t i o n
T = 125°C
J
0
10
20
30
40
50
60
70
01020304050
DC
180°
120°
90°
60°
30° RM S Lim it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.26.. Se rie s
Pe r Ju n c t io n
T = 1 2 5 ° C
J
150
200
250
300
350
400
110100
Numb er Of Equal Amplitud e Half Cycle Current Pulses (N)
Pe a k Ha lf Sine Wave On-st a te Curre nt (A)
Init ia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V App lied Following Surg e.
RRM
VSK.26.. Serie s
Pe r Ju n c t io n
150
200
250
300
350
400
0.01 0.1 1
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Peak Half Sine Wa ve On -stat e Current (A)
Init ial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
VSK.26.. Serie s
Pe r Jun c t io n
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Revision: 22-Apr-08 5
VSK.26..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 27 A
Vishay High Power Products
Fig. 7 - On-State Power Loss Characteristics
Fig. 8 - On-State Power Loss Characteristics
Fig. 9 - On-State Power Loss Characteristics
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
1K
/W
1.5K
/W
2K
/W
R=0.1K/W-DeltaR
thS
A
0.3K
/W
0.5K/W
4K
/W
0.7K/W
3K
/W
8K
/W
0
10
20
30
40
50
60
70
80
90
100
0
10 20 30 40 50 60
180°
120°
90°
60°
30°
Total RMS Output Current (A)
Maximum Total On-state Power Loss (W)
Conduction Angle
VSK.26.. Se ries
Pe r M o d u le
T = 1 2 5 ° C
J
0 20406080100120140
Maximum Allowable Ambient Temperature (°C)
1K
/W
1.5K
/W
0.2K
/W
0.3K
/W
0.5K/W
0.7K
/W
3K/ W
8K
/W
R=0.1K/W-DeltaR
thS
A
0
50
100
150
200
250
0 102030405060
Tot a l Outp ut Curre nt (A)
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rec t)
2 x VSK.26.. Serie s
Si n g l e Ph a se Br i d g e
Connected
T = 125°C
J
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
R=0.1K/W-DeltaR
thS
A
0.2K/W
0.3K/W
0.5K
/W
0.7K/W
1K
/W
1.5K
/W
3K
/W
0.4K
/W
0
50
100
150
200
250
300
350
0 1020304050607080
Total Output Current (A)
Maximum Total Power Loss (W)
120°
(Rect)
3 x VSK.26.. Serie s
Three Phase Bridge
Connected
T = 125°C
J
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6Revision: 22-Apr-08
VSK.26..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 27 A
Fig. 10 - On-State Voltage Drop Characteristics
Fig. 11 - Thermal Impedance ZthJC Characteristics
Fig. 12 - Gate Characteristics
1
10
100
1000
01234567
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Inst a nt a neo us O n-sta te Vo lt a g e (V)
T = 1 2 5 ° C
J
VSK.26.. Se rie s
Pe r Ju n c t io n
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
Steady State Value:
R = 0.62 K/W
(DC Operation)
thJC
thJC
Transient Thermal Impedance Z (K/W)
VSK.26.. Se rie s
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b )
(a)
Rectangular gate pulse
(4) (3) (2) (1)
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
TJ = -40 °C
T
J = 25 °C
TJ = 1 2 5 ° C
a)Recommended load line for
b)Recommended load line for
VGD
IGD
Fre q u e n c y Lim it e d b y PG ( A V )
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
VSK.26.. Serie s
Document Number: 94418 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 22-Apr-08 7
VSK.26..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 27 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
1- Module type
2- Circuit configuration (see end of datasheet)
3- Current code (1)
4- Voltage code (see Voltage Ratings table)
6- P = Lead (Pb)-free
5- dV/dt code: S90 = dV/dt 1000 V/µs
No letter = dV/dt 500 V/µs
(1) Available with no auxiliary cathode
(for details see dimensions - link at the end of datasheet)
To specify change: 26 to 27
e.g.: VSKT27/16P etc.
Device code
51324
6
VSK T 26 / 16 S90 P
VSKN
45 76
1
2
3
45
1
2
3
76
1
2
3
45
1
2
3
(1)~
+
(2)
(3)
-
G1
(4)
K1
(5)
K2
(7)
G2
(6)
(1)~
+
(2)
(3)
-
G1
(4)
K1
(5)
(1)~
+
(2)
(3)
-
K2
(7)
G2
(6)
(1) -
+
(2)
(3)
+
G1
(4)
K1
(5)
VSKLVSKH
VSKT
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95085
Document Number: 95085 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 29-Sep-08 1
ADD-A-PAK SCR
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
35 REF.
30 ± 0.5
(1.18 ± 0.0197)
29 ± 0.5
(1 ± 0.0197)
Viti M5 x 0.8
Screws M5 x 0.8
18 (0.7) REF.
15.6 ± 0.5
(0.6 ± 0.0197)
Fast-on tab 2.8 x 0.8 (0.110 x 0.03)
6.3 ± 0.3 (0.2 ± 0.0118)
30 ± 1 (1.18 ± 0.039)
24 ± 0.5
(1 ± 0.0197)
Detail Z
80 ± 0.3 (3.15 ± 0.0118)
92 ± 0.75 (3.6 ± 0.02953)
20 ± 0.5 (0.79 ± 0.0197)
20 ± 0.5 (0.79 ± 0.0197)
15 ± 0.5 (0.59 ± 0.0197)
21 ± 0.75
(0.8 ± 0.02953)
6.2 (2 x) ± 0.2 (0.2 ± 0.0079)
With no auxiliary cathode
1
2
3
45 76
13.8 REF.
5.8 ± 0.25
(0.2 ± 0.00984)
4 ± 0.2
(0.2 ± 0.0079)
45 76
13.8 (0.54)
46
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
Disclaimer
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Vishay
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
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