2006-03-24
BFP420
1
NPN Silicon RF Transistor
• For high gain low noise amplifiers
• For oscillators up to 10 GHz
• Noise figure F = 1.1 dB at 1.8 GHz
outstanding Gms = 21 dB at 1.8 GHz
• Transition frequency fT = 25 GHz
• Gold metallization for high reliability
• SIEGET 25 GHz fT - Line
12
3
4
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP420 AMs 1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
TA > 0 °C
T
A
≤ 0 °C
VCEO
4.5
4.1
V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 1.5
Collector current IC35 mA
Base current IB3
Total power dissipation1)
TS ≤ 107 °C
Ptot 160 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS ≤ 260 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4.5 5 - V
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - - 3 µA
DC current gain
IC = 20 mA, VCE = 4 V, pulse measured
hFE 60 95 130 -
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 3 V, f = 2 GHz
fT18 25 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.15 0.3 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.37 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.55 -
Noise figure
IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt
F- 1.1 - dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Gms - 21 - dB
Insertion power gain
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
|S21|214 17 -
Third order intercept point at output2)
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
IP3- 22 - dBm
1dB Compression point at output
IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
P-1dB - 12 -
1Gms = |S21 / S12|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
IS = 0.20045 fA
VAF = 28.383 V
NE = 2.0518 -
VAR = 19.705 V
NC = 1.1724 -
RBM = 3.4849 Ω
CJE = 1.8063 fF
TF = 6.7661 ps
ITF = 1mA
VJC = 0.81696 V
TR = 2.3249 ns
MJS = 0-
XTI = 3-
NF = 1.2432 -
ISE = 19.049 fA
NR = 1.3325 -
ISC = 0.019237 fA
IRB = 0.72983 mA
RC = 0.10105 Ω
MJE = 0.46576 -
VTF = 0.23794 V
CJC = 234.53 fF
XCJC = 0.3 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
BF = 72.534 -
IKF = 0.48731 A
BR = 7.8287 -
IKR = 0.69141 mA
RB = 8.5757 Ω
RE = 0.31111 -
VJE = 0.8051 V
XTF = 0.42199 -
PTF = 0 deg
MJC = 0.30232 -
CJS = 0 fF
XTB = 0 -
FC = 0.73234
C`-E`-dioden Data (Berkley-Spice 1G.6 Syntax): IS = 3.5 fA; N = 1.02 -, RS = 10 Ω
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
LBI =0.47 nH
LBO = 0.53 nH
LEI=0.23 nH
LEO = 0.05 nH
LCI = 0.56 nH
LCO = 0.58 nH
CBE = 136 fF
CCB = 6.9 fF
C
C
E = 134 fF
EHA07389
LBI
BE
C
BO
L
C
EI
L
LEO
CB
C
CI
LCO
L
CE
C
Transistor
C'-E'-
B
Diode
E
E'
C'B'
Chip
Valid up to 6GHz
The SOT343 package has two emitter leads. To avoid high complexity to the package equivalent
circuit both leads are combined in one electrical connection
Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes
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For non-linear simulation:
· Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
· If you need simulation of the reverse characteristics, add the diode with the
C'-E'- diode data between collector and emitter.
· Simulation of package is not necessary for frequencies < 100MHz.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Note:
· This transistor is constructed in a common emitter configuration. This feature causes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
EHA07307
C
EE
B
Transistor Schematic Diagram
The common emitter configuration shows the following advantages:
· Higher gain because of lower emitter inductance.
· Power is dissipated via the grounded emitter leads, because the chip is mounted
on copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
Common Emitter S- and Noise-parameter
For detailed S- and Noise-parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies Application Notes
CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
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Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
20
40
60
80
100
120
140
160
mW
200
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 1 2 V4
VCB
0
0.05
0.1
0.15
0.2
pF
0.3
Ccb
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Transition frequency fT= ƒ(IC)
f = 2 GHz
VCE = parameter in V
0 5 10 15 20 25 30 mA 40
IC
0
2
4
6
8
10
12
14
16
18
20
22
24
GHz
30
fT
2 to 4
1.5
1
0.75
0.5
Power gain Gma, Gms, |S21|² = ƒ (f)
VCE = 2 V, IC = 20 mA
0 1 2 3 4 5 6
0
4
8
12
16
20
24
28
32
36
40
44
f [GHz]
G [dB]
G
ms
G
ma
|S
21
|
2
Power gain Gma, Gms = ƒ (IC)
VCE = 2V
f = parameter in GHz
0 4 8 12 16 20 24 28 32 mA 40
IC
0
2
4
6
8
10
12
14
16
18
20
22
24
dB
30
G
0.9
1.8
2.4
3
4
5
6
Power gain Gma, Gms = ƒ (VCE)
IC = 20 mA
f = parameter in GHz
0 0.5 1 1.5 2 2.5 3 3.5 V4.5
VCE
0
2
4
6
8
10
12
14
16
18
20
22
24
dB
30
G
0.9
1.8
2.4
3
4
5
6
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Noise figure F = ƒ(IC)
VCE = 2 V, ZS = ZSopt
0 4 8 12 16 20 24 28 32 mA 38
IC
0
0.5
1
1.5
2
2.5
3
dB
4
F
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
Noise figure F = ƒ(IC)
VCE = 2 V, f = 1.8 GHz
0 4 8 12 16 20 24 28 mA 36
IC
0
0.5
1
1.5
2
dB
3
F
ZS = 50 Ohm
ZS = ZSopt
Noise figure F = ƒ(f)
VCE = 2 V, ZS = ZSopt
01234GHz 6
f
0
0.5
1
1.5
2
dB
3
F
IC = 20 mA
IC = 5 mA
Source impedance for min.
noise figure vs. frequency
VCE = 2 V, IC = 5 mA / 20 mA
100
+j10
-j10
50
+j25
-j25
25
+j50
-j50
10
+j100
-j100
0
3GHz
4GHz
5GHz
0.45GHz
0.9GHz
1.8GHz
2.4GHz
6GHz
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Package SOT343
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code (YM)
BGA420
Type code
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3 +0.1
2±0.2 ±0.1
0.9
12
34 A
+0.1
0.6 A
M
0.2
1.3
-0.05
-0.05
0.15
0.1 M
4x
0.1
0.1 MIN.
Pin 1
Manufacturer
2006-03-24
BFP420
10
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
