BFP420 NPN Silicon RF Transistor * For high gain low noise amplifiers 3 * For oscillators up to 10 GHz 2 4 * Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz * Transition frequency f T = 25 GHz * Gold metallization for high reliability * SIEGET 25 GHz fT - Line ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP420 Marking AMs 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0 C 4.5 TA 0 C 4.1 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 35 Base current IB 3 Total power dissipation1) Ptot 160 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 mA TS 107 C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 260 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 2006-03-24 1 BFP420 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 4.5 5 - V ICES - - 10 A ICBO - - 100 nA IEBO - - 3 A hFE 60 95 130 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain - IC = 20 mA, VCE = 4 V, pulse measured 2006-03-24 2 BFP420 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 18 25 - GHz Ccb - 0.15 0.3 Cce - 0.37 - Ceb - 0.55 - F - 1.1 - dB G ms - 21 - dB 14 17 - IP 3 - 22 - P-1dB - 12 - IC = 30 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz |S21| 2 Insertion power gain VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Third order intercept point at output2) dBm VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 1.8 GHz 1G = |S / S | ms 21 12 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 2006-03-24 3 BFP420 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.20045 28.383 2.0518 19.705 1.1724 3.4849 1.8063 6.7661 1 0.81696 2.3249 0 3 fA V V - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = fF ps mA V ns - 72.534 0.48731 7.8287 0.69141 8.5757 0.31111 0.8051 0.42199 0 0.30232 0 0 0.73234 A mA V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.2432 19.049 1.3325 0.019237 0.72983 0.10105 0.46576 0.23794 234.53 0.3 0.75 1.11 300 fA fA mA V fF V eV K C-E-dioden Data (Berkley-Spice 1G.6 Syntax): IS = 3.5 fA; N = 1.02 -, RS = 10 All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: C CB B L BO L BI B' Transistor Chip E' C' L CI L CO C C'-E'Diode C BE C CE L EI LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.47 0.53 0.23 nH nH nH nH nH nH fF fF fF 0.05 0.56 0.58 136 6.9 134 Valid up to 6GHz L EO E EHA07389 The SOT343 package has two emitter leads. To avoid high complexity to the package equivalent circuit both leads are combined in one electrical connection Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil- und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 2006-03-24 4 BFP420 For non-linear simulation: * Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. * If you need simulation of the reverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. * Simulation of package is not necessary for frequencies < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: * This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: * Higher gain because of lower emitter inductance. * Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. Common Emitter S- and Noise-parameter For detailed S- and Noise-parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies Application Notes CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 2006-03-24 5 BFP420 Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 10 3 200 mW 160 K/W RthJS Ptot 140 120 10 2 100 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 80 60 40 20 0 0 20 40 60 80 100 120 C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 TS s 10 tp Permissible Pulse Load Collector-base capacitance Ccb= (VCB) Ptotmax/P totDC = (tp) f = 1MHz 10 1 0.3 Ccb Ptotmax /PtotDC pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 0.2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 1 2 V 4 VCB 2006-03-24 6 0 BFP420 Transition frequency fT = (IC) Power gain Gma, Gms , |S 21| = (f) f = 2 GHz VCE = 2 V, I C = 20 mA VCE = parameter in V 30 GHz 44 2 to 4 40 1.5 24 1 36 0.75 32 22 fT 20 Gms 28 18 G [dB] 16 14 0.5 12 24 20 G 10 ma 16 |S |2 8 21 12 6 8 4 2 4 0 0 5 10 15 20 25 30 mA 40 0 IC 0 1 2 3 4 5 6 f [GHz] Power gain Gma, Gms = (I C) VCE = 2V Power gain Gma, Gms = (VCE) f = parameter in GHz f = parameter in GHz IC = 20 mA 30 dB 30 dB 0.9 0.9 24 24 22 22 1.8 20 18 2.4 16 3 14 G G 20 4 12 5 10 6 16 3 14 4 12 5 10 6 8 6 6 4 4 2 2 4 8 12 16 20 24 28 32 mA 0 0 40 IC 2.4 18 8 0 0 1.8 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VCE 2006-03-24 7 BFP420 Noise figure F = (IC ) Noise figure F = (I C) VCE = 2 V, ZS = ZSopt VCE = 2 V, f = 1.8 GHz 4 3 dB dB 3 F F 2 2.5 2 1.5 ZS = 50 Ohm ZS = ZSopt 1.5 1 0.5 0 0 1 f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 4 8 12 16 20 24 28 0.5 0 0 32 mA 38 4 8 12 16 20 28 mA 24 IC 36 IC Noise figure F = (f) Source impedance for min. VCE = 2 V, ZS = ZSopt noise figure vs. frequency VCE = 2 V, I C = 5 mA / 20 mA 3 +j50 dB +j25 +j100 +j10 2 F 2.4GHz 1.8GHz 0.9GHz 3GHz 0 1.5 10 25 50 100 0.45GHz 4GHz 1 5GHz IC = 20 mA IC = 5 mA -j10 6GHz 0.5 -j25 -j100 -j50 0 0 1 2 3 4 GHz 6 f 2006-03-24 8 Package SOT343 BFP420 Package Outline 0.9 0.1 2 0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 0.1 3 2.1 0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BGA420 Type code Pin 1 Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 2006-03-24 9 BFP420 Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2006-03-24 10