Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-Resistance BVDSS 30V
▼ Simple Drive Requirement RDS(ON) 23mΩ
▼ Dual N MOSFET Package ID7.8A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient362.5 ℃/W
Data and specifications subject to change without notice
RoHS-compliant Product
Thermal Data Parameter
Total Power Dissipation 2
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor
Storage Temperature Range
Continuous Drain Current36.2
Pulsed Drain Current130
0.016
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
201128071
1
AP4232AGM
Rating
30
±20
7.8
S1 G1S2G2
D1 D1 D2 D2
SO-8
G2
D2
S2
G1
D1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=7A - - 23 mΩ
VGS=4.5V, ID=5A - - 35 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=7A - 7 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
QgTotal Gate Charge2ID=7A - 10 21 nC
Qgs Gate-Source Charge VDS=24V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5.6 - nC
td(on) Turn-on Delay Time2VDS=15V - 7.4 - ns
trRise Time ID=1A - 6.4 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 19 - ns
tfFall Time RD=15Ω- 4.6 - ns
Ciss Input Capacitance VGS=0V - 620 1150 pF
Coss Output Capacitance VDS=25V - 100 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=1.7A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=7A, VGS=0V, - 22 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
2
AP4232AGM
AP4232AG
M
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
10
20
30
40
50
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC 10V
7.0V
5.0V
4.5V
VG=3.0V
0
10
20
30
40
50
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC 10V
7.0V
5.0V
4.5V
VG=3.0V
16
20
24
28
32
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=5A
TA=25
℃
0.7
1.0
1.3
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=7A
VG=10V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.6
0.8
1.0
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
AP4232AGM
Q
VG
4.5V
QGS QGD
QG
Charge
0
4
8
12
16
048121620
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =15V
VDS =18V
VDS =24V
ID=7A
10
100
1000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC 0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135℃/W
tT
0.02
0
10
20
30
40
50
02468
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =5V
Package Outline : SO-8
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
A1 0.10 0.18 0.25
B 0.33 0.41 0.51
C 0.19 0.22 0.25
D 4.80 4.90 5.00
E1 3.80 3.90 4.00
E 5.80 6.15 6.50
L 0.38 0.71 1.27
θ0 4.00 8.00
e
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
1.27 TYP
ADVANCED POWER ELECTRONICS CORP.
c
DETAIL A
A1
A
4232AG
M
YWWSSS
Package Code
Part Numbe
r
DETAIL A Lθ
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
e
B
134
5678
2
D
E1 E
meet Rohs requirement
5
