MCMA200PD1600SA
Phase leg
Thyristor Module
13/4 56 2
Part number
MCMA200PD1600SA
Backside: isolated
TAV
T
VV1.13
RRM
200
1600
=
V= V
I= A
2x
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Copper base plate with
Direct Copper Bonded Al2O3-ceramic
● Spring contacts for solder-free dirver connection
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
SimBus A
● Industry standard outline
● RoHS compliant
● Gate: Spring contacts
for solder-free PCB-mounting
● Height: 17 mm
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
4800
IXYS reserves the right to change limits, conditions and dimensions. 20140319bData according to IEC 60747and per semiconductor unless otherwise specified
© 2014 IXYS all rights reserved
MCMA200PD1600SA
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
V
IA
V
T
1.16
R0.15 K/W
min.
200
VV
200T = 25°C
VJ
T = °C
VJ
mA15V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
90
P
tot
760 WT = 25°C
C
200
1600
forward voltage drop
total power dissipation
Conditions Unit
1.40
T = 25°C
VJ
125
V
T0
V0.81T = °C
VJ
140
r
T
1.6 mΩ
V1.13T = °C
VJ
I = A
T
V
200
1.44
I = A400
I = A400
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1600T = 25°C
VJ
IA314
P
GM
Wt = 30 µs 120
max. gate power dissipation
P
T = °C
C
140
Wt = 60
P
P
GAV
W8
average gate power dissipation
C
J
273
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
140
I²t T = 45°C
value for fusing
T = °C140
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
140
6.00
6.48
130.1
126.3
kA
kA
kA
kA
5.10
5.51
180.0
174.7
1600
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 140°C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage V= 6 V T = °C25
(dv/dt) T=140°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
IA;V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
600 A
T
P
G
=0.5
di /dt A/µs;
G
=0.5
DDRM
cr
V = ⅔ V
D DRM
GK
1000
2.5 V
T= °C-40
VJ
I
GT
gate trigger current V= 6 V T = °C25
DVJ
150 mA
T= °C-40
VJ
2.6 V
200 mA
V
GD
gate non-trigger voltage T= °C
VJ
0.2 V
I
GD
gate non-trigger current 10 mA
V = ⅔ V
D DRM
140
latching current T= °C
VJ
300 mAI
L
25tµs
p
=30
IA;
G
= 0.5 di /dt A/µs
G
=0.5
holding current T= °C
VJ
200 mAI
H
25V= 6 V
D
R = ∞
GK
gate controlled delay tim e T= °C
VJ
2µst
gd
25
IA;
G
= 0.5 di /dt A/µs
G
=0.5
V = ½ V
D DRM
turn-off time T= °C
VJ
150 µst
q
di/dt = A/µs;10 dv/dt = V/µs;20
V =
R
100 V; I A;
T
= 200 V = ⅔ V
D DRM
tµs
p
= 200
non-repet., I = 200 A
T
140
R
thCH
thermal resistance case to heatsink K/W
Rectifier
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. re pe titive reverse/for wa r d b l ockin g volt a ge
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.08
IXYS reserves the right to change limits, conditions and dimensions. 20140319bData according to IEC 60747and per semiconductor unless otherwise specified
© 2014 IXYS all rights reserved
MCMA200PD1600SA
Ratings
XXXXXXXXX
yywwA add
Part Name Date Code Data Matrix
C
M
M
A
200
PD
1600
SA
Part number
Thyristor (SCR)
Thyristor
(up to 1800V)
Phase leg
SimBus A
Module
=
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm5
mounting torque 3
T
VJ
°C140
virt ua l j un ctio n temp eratu re -40
Weight g152
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
M
T
Nm5
terminal torque 2.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
14.0 10.0
14.0 10.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 300 A
per terminal
125-40
terminal to terminal
SimBus A
Similar Part Package Voltage class
MCMA200P1600SA Simbus A 1600
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCMA200PD1600SA 510380Blister 9MCMA200PD1600SAStandard
4800
ISOL
T
stg
°C125
storage temperature -40
4000
threshold voltage V0.81
mΩ
V
0 max
R
0 max
slope resistance * 0.8
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Thyristor
140 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20140319bData according to IEC 60747and per semiconductor unless otherwise specified
© 2014 IXYS all rights reserved
MCMA200PD1600SA
13/4 56 2
Outlines SimBus A
IXYS reserves the right to change limits, conditions and dimensions. 20140319bData according to IEC 60747and per semiconductor unless otherwise specified
© 2014 IXYS all rights reserved
MCMA200PD1600SA
04080120160
0
50
100
150
200
250
300
350
0.01 0.10 1.00 10.00
0.1
1.0
10.0
100.0
0.01 0.1 1
2000
3000
4000
5000
6000
0.0 0.5 1.0 1.5
0
100
200
300
400
1 10 100 1000 10000
0.00
0.04
0.08
0.12
0.16
I
T
[A]
t[s]
V
T
[V]
23456789011
10
4
10
5
10
6
I
2
t
[A
2
s]
t[ms]
I
TSM
[A]
T
VJ
= 25°C
T
VJ
=45°C
50 Hz, 80% V
RRM
T
VJ
= 45°C
V
R
=0 V
I
TAVM
[A]
T
case
[°C]
Z
thJC
[K/W]
t [ms]
Fig. 1 Forward current vs.
voltage drop per thyristor
Fig. 2 Surge overload current
vs. time per thyristor
Fig. 3 I
2
t vs. time per thyristor
Fig. 4 Gate voltage & gate current Fig. 6 Max. forward current vs.
case temperature per thyr.
Fig. 8 Transient thermal impedance junction to case
vs. time per thyristor
t
gd
[μs]
I
G
[A]
lim.
typ.
Fig. 5 Gate controlled delay time t
gd
0 50 100 150 200 250
0
50
100
150
200
250
300
350
I
T(AV)
[A]
P
tot
[W]
Fig. 7 Power dissipation vs. forward current
and ambient temperature per th
y
ristor
0 50 100 150
T
amb
[°C]
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
I
G
[A]
T
VJ
= 140°C
T
VJ
= 140°C
T
VJ
= 125°C
140°C
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
V
G
[V]
1: I
GT
,T
VJ
= 125°C
2: I
GT
,T
VJ
=25°C
3: I
GT
,T
VJ
=-40°C
1
2
3
4
5
6
I
GD
,T
VJ
=140°C
iR
thi
(K/W) t
i
(s)
1 0.0050 0.00010
2 0.0110 0.01800
3 0.0430 0.16000
4 0.0610 0.50000
5 0.0300 1.60000
R
thHA
0.08
0.10
0.20
0.40
0.60
0.80
4: P
GM
=8W
5: P
GM
=60W
6: P
GM
=120W
T
VJ
= 25°C
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20140319bData according to IEC 60747and per semiconductor unless otherwise specified
© 2014 IXYS all rights reserved
