SFH 313
SFH 313 FA
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
Lead (Pb) Free Product - RoHS Compliant
SFH 313 SFH 313 FA
2007-03-30 1
Wesentliche Merkmale
• Speziell geeignet für Anwendunge n im Bereich
von 460 nm bis 1080 nm (SFH 313) und bei
880 nm (SFH 313 FA)
• Hohe Linearität
• 5 mm-Plastikbauform
Anwendungen
• Computer-Blitzlichtgeräte
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code
SFH 313 Q62702P1667
SFH 313-2/3 Q62702P3598
SFH 313 FA Q62702P1674
SFH 313 FA-2/3 Q62702P3597
SFH 313 FA-3/4 Q62702P5196
Features
• Especially suitable for applications from
460 nm to 1080 nm (SFH 313) and of 880 nm
(SFH 313 FA)
• High linearity
• 5 mm plastic package
Applications
• Computer-controlled flashes
• Photointerrupters
• Industrial electronics
• For control and drive circuits
2007-03-30 2
SFH 313, SFH 313 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 … + 100 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 70 V
Kollektorstrom
Collector curr ent IC50 mA
Kollektorspitzenstrom, τ < 10 μs
Collector surge current ICS 100 mA
Emitter-Kollektorspannung
Emitter-collector voltage VEC 7 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 200 mW
Wärmewiderstand
Thermal resistance RthJA 375 K/W
SFH 313, SFH 313 FA
2007-03-30 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 313 SFH 313 FA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 850 870 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sens itivity
S = 10% of Smax
λ460 … 1080 740 … 1080 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A0.55 0.55 mm2
Abmessungen der Chipfläche
Dimensions of chip area L × B
L × W1 × 1 1 × 1 mm × mm
Halbwinkel
Half angle ϕ± 10 ± 10 Grad
deg.
Kapazität, VCE = 5 V, f = 1 MHz, E = 0
Capacitance CCE 10 10 pF
Dunkelstrom
Dark current
VCE = 20 V, E = 0
ICEO 3 (≤ 200) 3 (≤ 200) nA
2007-03-30 4
SFH 313, SFH 313 FA
Directional Characteristics
Srel = f (ϕ)
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
-1 -2 -3 -4
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.5 mW/cm2, VCE = 5 V
IPCE
2.5 … 5
4 … 8
6.3 … 12.5
≥ 10
mA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf810 12 14 μs
Kollektor-Emitter-
Sättigungsspannung
Collector-emitter saturation
voltage
IC = IPCEmin1) × 0.3,
Ee = 0.5 mW/cm2
VCEsat 150 150 150 150 mV
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.
1) IPCEmin is the min. photocurrent of the specified group.
OHF02330
02040 60 80 100 1200.40.60.81.0
100
90
80
70
60
50
0
10203040
0
0.2
0.4
0.6
0.8
1.0
ϕ
SFH 313, SFH 313 FA
2007-03-30 5
TA = 25 °C, λ = 950 nm
Relative Spectral Sensitivity,
SFH 313 Srel = f (λ)
Photocurrent IPCE = f (TA),
VCE = 5 V, normalized to 25 °C
Photocurrent
IPCE = f (VCE), E = parameter
λ
OHF02332
0
rel
S
400
10
20
30
40
50
60
70
80
%
100
500 600 700 800 900 nm 1100
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
V
OHF02336
CE
PCE
Ι
0
10
0
10 20 30 40 50 V 70
10
1
mA
0.5 mW
cm
2
2
cm
mW
1
2
cm
mW
0.25
0.1 mW
cm
2
2
10
Relative Spectral Sensitivity,
SFH 313 FA Srel = f (λ)
Photocurrent
IPCE = f (Ee), VCE = 5 V
Dark Current
ICEO = f (TA), VCE = 10 V, E = 0
λ
OHF02331
0
rel
S
400 600 800 1000 1200
20
40
60
80
%
100
nm
E
OHF02337
e
PCE
Ι
10
0
-2
10
10
-1
1
10
mA
10
-3 -2
10
0
10mW/cm
2
10
2
T
OHF02342
A
0
CEO
Ι
-1
10
10
0
10
1
10
2
10
3
nA
20 40 60 80 100˚C
Dark Current
ICEO = f (VCE), E = 0
Collector-Emitter Capacitance
CCE = f (VCE), f = 1 MHz
Total Power Dissipation
Ptot = f (TA)
V
OHF02341
CE
0
CEO
Ι
-2
10
10 -1
10 0
10 1
10 2
nA
10 20 30 40 50 70V
OHF00349
CE
C
CE
V
10
-2
V
0
2
4
6
8
10
12
14
16
18
pF
-1
10
0
10
1
10
2
10
T
OHF02340
A
0
tot
P
020 40 60 80 ˚C 100
50
100
150
200
250
mW
2007-03-30 6
SFH 313, SFH 313 FA
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Cathode (Diode)
GEXY6260
Collector (Transistor)
5.7 (0.224)
5.1 (0.201)
1.8 (0.071)
1.2 (0.047) Chip position
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
spacing
2.54 (0.100)
0.8 (0.031)
0.5 (0.020)
29 (1.142)
27 (1.063)
9.0 (0.354)
8.2 (0.323)
7.5 (0.295)
7.8 (0.307)
Area not flat
ø4.8 (0.189)
ø5.1 (0.201)
SFH 313, SFH 313 FA
2007-03-30 7
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
Attention please!The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may
contain dangerous substances. For information on the types in question please contact our Sales
Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
