GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFOR M ANC E CH ARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
VMIL 100
100 Watts, 28 Volts, Class AB
Defcom 100 - 200 MHz
GENERAL DESCRIPTION
The VMIL100 is an input matched COMMON EMITTER broadband
transistor specifically intended for use in the 100-200 MHz frequency band. It
may be operated in Class AB or C. Gold metallization and silicon diffused
resistors ensure ruggedness and high reliability.
CASE OUTLINE
55HV, Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 270 Watts
o
Maximum Voltage and Current
BVces Collector to Emiter Voltage 65 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 20 A
Maximum Temp eratu res
Storage Temperature - 65 to +150 C
o
Operating Junction Temperature +150 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 175 MHz
Vcc = 28 Volts
Po=100W, F=175 MHz
100
7.0 14
8.5
60
20
30:1
Watts
Watts
dB
%
BVebo
BVces
BVceo
Cob
hFE
θjc
Emitter to Base Breakdown
Collector to Emitter Breakdo wn
Collector to Emitter Breakdo wn
Output Capacitance
DC - Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 100 mA
Ie = 50 mA
Vcb = 28 V, F = 1 MHz
Vce = 5 V, Ic = 1 A
4.0
65
33
10 220
.65
Volts
Volts
Volts
pF
C/W
o
Issue August 1996
VMIL100
August 1996
