Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ SO-8 similar area footprint and pin assignment BVDSS 30V
▼ Low Gate Charge RDS(ON) 12mΩ
▼ Fast Switching Speed ID47A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
EAS Single Pulse Avalanche Energy4mJ
IAR Avalanche Current A
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 3.4 ℃/W
Rthj-a Thermal Resistance Junction-ambient3Max. 85 ℃/W
Data and specifications subject to change without notice
Thermal Data Parameter
Storage Temperature Range
Total Power Dissipation 37
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.29
29
24
Continuous Drain Current, VGS @ 10V 30
Pulsed Drain Current1120
Gate-Source Voltage ±20
Continuous Drain Current, VGS @ 10V 47
Parameter Rating
Drain-Source Voltage 30
200408053-1/4
AP1203GMA
Pb Free Plating Product
G
D
S
SSSG
D
APAK-5
The APAK-5 package is preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=20A - - 12 mΩ
VGS=4.5V, ID=15A - - 25 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance2VDS=10V, ID=10A - 25 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=150oC) VDS=24V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS= ±20V - - ±100 nA
QgTotal Gate Charge2ID=20A - 13 20 nC
Qgs Gate-Source Charge VDS=20V - 3.3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 8 - nC
td(on) Turn-on Delay Time2VDS=15V - 8 - ns
trRise Time ID=20A - 65 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 20 - ns
tfFall Time RD=0.75Ω-5-
ns
Ciss Input Capacitance VGS=0V - 1040 1660 pF
Coss Output Capacitance VDS=25V - 240 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 165 - pF
RgGate Resistance f=1.0MHz - 1.9 2.9 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=45A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=20A, VGS=0V, - 24 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board.
4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω
2/4
AP1203GMA
AP1203GM
A
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
0
20
40
60
80
100
0.0 2.0 4.0 6.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
7.0V
5.0V
4.5V
VG=3.0V
0
20
40
60
80
100
0.0 2.0 4.0 6.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
7.0V
5.0V
4.5V
VG=3.0V
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=20A
VG=10V
0.3
0.6
0.9
1.2
1.5
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized VGS(th) (V)
10
15
20
25
30
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=15A
TC=25
℃
0
5
10
15
20
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj=25oCTj=150oC
Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4/4
AP1203GMA
Q
VG
4.5V
QGS QGD
QG
Charge
0
3
6
9
12
0102030
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =13V
VDS =16V
VDS =20V
I D=20A
100
1000
10000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
100us
1ms
10ms
100ms
D
C
TC=25oC
S
in
g
le Puls
e
0
20
40
60
80
02468
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =5V
