© 2002 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C70A
IC90 TC= 90°C30A
ICM TC= 25°C, 1 ms 1 4 0 A
SSOA VGE= 15 V, TVJ = 125°C, RG = 22 Ω ICM = 90 A
(RBSOA) Clamped inductive load, L = 30 µH @ 0.8 VCES
tSC VGE= 15 V, VCE = 720 V, TJ = 125°C 10µs
(SCSOA) RG = 22 Ω, non repetitive
PCTC= 25°C IGBT 250 W
Diode 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS t = 1 min leads-to housing 2500 V~
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight 5g
VCES = 1200 V
IC25 = 70 A
VCE(sat) = 3.6 V
tfi(typ) = 180 ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 3 mA, VGE = 0 V 1200 V
VGE(th) IC= 250 µA, VCE = VGE 36V
ICES VCE = 0.8 • VCES TJ = 25°C1mA
VGE = 0 V TJ = 150°C3mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IT, VGE = 15 V 3.6 V
98741A (01/02)
IGBT with Diode
ISOPLUS 247TM
(Electrically Isolated Backside)
Short Circuit SOA Capability
IXSR 35N120BD1
Features
zDCB Isolated mounting tab
zMeets TO-247AD package outline
zHigh current handling capability
zLatest generation HDMOSTM process
zMOS Gate turn-on
- drive simplicity
Applications
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
zAC motor speed control
zDC servo and robot drives
zDC choppers
Advantages
zEasy assembly
zHigh power density
ISOPLUS 247TM
GCIsolated backside*
E 153432
E
G = Gate, C = Collector,
E = Emitter
* Patent pending
c Device must be heatsunk for high temperature measurements to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions and dimensions
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXSR 35N120BD1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IT; VCE = 10 V, 16 23 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Ciss 3600 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 3 15 pF
Crss 75 pF
Qg120 nC
Qge IC = IT, VGE = 15 V, VCE = 0.5 VCES 33 nC
Qgc 49 nC
td(on) 36 ns
tri 27 ns
td(off) 160 300 ns
tfi 180 300 ns
Eoff 59mJ
td(on) 38 ns
tri 29 ns
Eon 6mJ
td(off) 240 ns
tfi 340 ns
Eoff 9mJ
RthJC 0.5 K/W
RthCK 0.15 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = IT, VGE = 0 V, 2.75 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.85
IRM IF = IT, VGE = 0 V, -diF/dt = 100 A/µs 7 14.3 A
trr VR = 100 V
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V 40 ns
RthJC 0.83 K/W
Inductive load, TJ = 25°°
°°
°C
IC = IT, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = 2.7 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°°
°°
°C
IC = IT, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = 2.7 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ISOPLUS 247 OUTLINE
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Note: 1. IT = 35A
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