TIC263 SERIES
SILICON TRIACS
1
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●High Current Triacs
●25 A RMS
●Glass Passivated Wafer
●400 V to 800 V Off-State Voltage
●175 A Peak Current
●Max IGT of 50 mA (Quadrants 1 - 3)
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60°C derate linearly to 110°C case temperature at
the rate of 500mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
TIC263D
TIC263M
TIC263S
TIC263N
VDRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 60°C case temperature (see Note 2) IT(RMS) 25 A
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) ITSM 175 A
Peak gate current IGM ±1 A
Operating case temperature range TC-40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL230 °C
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IDRM
Repetitive peak
off-state current VD = Rated VDRM IG = 0 TC = 110°C ±2 mA
IGT
Gate trigger
current
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
15
-30
-20
32
50
-50
-50 mA
VGT
Gate trigger
voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
0.8
-0.8
-0.8
0.8
2
-2
-2
2
V
VTOn-state voltage IT = ±35.2 A IG = 50 mA (see Note 4) ±1.5 ±1.7 V
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ADA
MT1
MT2
G
1
2
3