A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
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ect to chan
g
e without notice.
CHARACTERISTICS TA = 25 OCNONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
VBR IR = 10 µA120 V
CJVR = 10 V f = 1.0 MHz 0.10 pF
RSIF = 10 mA f = 100 MHz 1.0 1.5 Ω
ΩΩ
Ω
TLIF = 10 mA IR = 6.0 mA 150 nS
trr IF = 20 mA VR = 10 V 15 nS
SILICON PIN DIODE CHIP
AP2000A-00
DESCRIPTION:
The AP2000A-00 is a Planar Silicon
PIN Diode Chip Designed for Medium
Speed Switching Applications Up to
18 GHz.
FEATURES INCLUDE:
•
••
• Low Capacitance - 0.10 pF Typical
•
••
• Fast Switching - 15 nS T ypical
•
••
• SiO2 Passivation
MAXIMUM RATINGS
IF100 mA
VR120 V
PDISS 0.5 W @ T A = 25 OC
TJ-65 OC to +175 OC
TSTG -65 OC to +200 OC
θ
θθ
θJC 45 OC/W
PACKAGE STYLE CHP152
0.015” ±0.002” S Q .
Anode = Pad
Cathode = Bott om Side
0.002” ±0.001”
