Linear Integrated Systems
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1/312012 Rev A5 ECN# JS210_211_212
FEATURES
HIGH GAIN gfs=7000µmho MINIMUM (J211, J212)
HIGH INPUT IMPEDENCE IGSS= 100pA MAXIMUM
LOW CAPACITANCE CISS= 5pF TYPICAL
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Gate-Drain or Gate-Source Voltage
-25V
Gate Current
10mA
Total Device Dissipation @25°C Ambient
(Derate 3.27 mW/°C)
360mW
Operating Temperature Range
-55 to +150 °C
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTICS
SSTJ210
SSTJ211
SSTJ212
UNITS
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
IGSS
Gate Reverse Current
--
--
-100
--
--
-100
--
--
-100
pA
VDS = 0, VGS = -15V (NOTE 1)
VGS(off)
Gate-Source Cutoff Voltage
-1
--
-3
-2.5
--
-4.5
-4
--
-6
V
VDS = 15V,
ID = 1nA
BVGSS
Gate-Source Breakdown Voltage
-25
--
--
-25
--
--
-25
--
--
VDS = 0,
IG = -1µA
IDSS
Drain Saturation Current
2
--
15
7
--
20
15
--
40
mA
VDS = 15V, VGS=0 (NOTE 2)
IG
Gate Current
--
-10
--
--
-10
--
--
-10
--
pA
VDS = 10V, ID=1mA (NOTE 1)
gfs
Common-Source Forward
Transconductance
4,000
--
12,000
6,000
--
12,000
7,000
--
12,000
µmho
VDS = 15V, VGS=0
f=1kHz
gos
Common-Source Output
Conductance
--
--
150
--
--
200
--
--
200
CISS
Common-Source Input
Capacitance
--
4
--
--
4
--
--
4
--
pF
f=1MHz
Crss
Common-Source Reverse
Transfer Capacitance
-
1
--
--
1
--
--
1
--
en
Equivalent Short-Circuit Input
Noise Voltage
-
10
--
--
10
--
--
10
--
nV√Hz
f=1kHz
J210, J211, J212 /
SSTJ210, SSTJ211, SSTJ212
LOW NOISE N-CHANNEL JFET
GENERAL PURPOSE AMPLIFIER
D
Plastic
SG
D
TO-92
S
G
NOTE 1: Approximately doubles for every 10°C increase in TA.
NOTE 2: Pulse test duration = 2ms.
S
D
2
3
1
G
SOT-23
TOP VIEW
SSTJ210, SSTJ211, SSTJ212
J210, J211, J212
