J210, J211, J212 / SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER FEATURES HIGH GAIN gfs=7000mho MINIMUM (J211, J212) HIGH INPUT IMPEDENCE LOW CAPACITANCE TO-92 IGSS= 100pA MAXIMUM CISS= 5pF TYPICAL Plastic D ABSOLUTE MAXIMUM RATINGS G @ 25 C (unless otherwise stated) Gate-Drain or Gate-Source Voltage -25V Gate Current 10mA Total Device Dissipation @25C Ambient (Derate 3.27 mW/C) S G D S SOT-23 TOP VIEW 360mW Operating Temperature Range -55 to +150 C SSTJ210, SSTJ211, SSTJ212 J210, J211, J212 D 1 3 G S 2 ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated) SYMBOL IGSS CHARACTERISTICS Gate Reverse Current SSTJ210 SSTJ211 SSTJ212 UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX --- -100 --- -100 --- -100 pA VGS(off) Gate-Source Cutoff Voltage -1 -- -3 -2.5 -- -4.5 -4 -- -6 BVGSS Gate-Source Breakdown Voltage -25 -- -- -25 -- -- -25 -- -- CONDITIONS VDS = 0, VGS = -15V (NOTE 1) VDS = 15V, ID = 1nA V VDS = 0, IG = -1A IDSS Drain Saturation Current 2 -- 15 7 -- 20 15 -- 40 mA VDS = 15V, VGS=0 (NOTE 2) IG Gate Current Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance -- -10 -- -- -10 -- -- -10 -- pA VDS = 10V, ID=1mA (NOTE 1) 4,000 -- -- 12,000 -- -- 150 -- -- 200 -- -- 200 -- 4 -- -- 4 -- -- 4 -- gfs gos CISS Crss en Equivalent Short-Circuit Input Noise Voltage 12,000 6,000 -- 12,000 7,000 mho f=1kHz VDS = 15V, VGS=0 pF - 1 -- -- 1 -- -- 1 -- - 10 -- -- 10 -- -- 10 -- nVHz f=1MHz f=1kHz NOTE 1: Approximately doubles for every 10C increase in TA. NOTE 2: Pulse test duration = 2ms. Linear Integrated Systems * 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 1/312012 Rev A5 ECN# JS210_211_212