INTEGRATED CIRCUITS DIVISION
www.ixysic.com
DS-CPC3703-R07 1
CPC3703
250V N-Channel
Depletion-Mode FET
V(BR)DSX /
V(BR)DGX
RDS(on)
(max)
IDSS (min) Package
250V 4360mA SOT-89
Applications
Features
Description
Ordering Information
Circuit Symbol
• Ignition Modules
• Normally-On Switches
• Solid State Relays
• Converters
• Telecommunications
• Power Supply
• High Breakdown Voltage: 250V
• Low On-Resistance: 4 max. at 25ºC
• Low VGS(off) Voltage: -1.6 to -3.9V
• Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
• High Input Impedance
• Small Package Size: SOT-89
The CPC3703 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high
input impedance, for use in high-power applications.
The CPC3703 is a highly reliable device that has
been used extensively in our Solid State Relays for
industrial and telecommunications applications.
This device excels in power applications that require
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3703 offers a low, 4 maximum, on-state
resistance at 25ºC.
The CPC3703 has a minimum breakdown voltage of
250V, and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Package Pinout
(SOT-89)
G
D
S
D
S
G
D
Part # Description
CPC3703CTR N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
INTEGRATED CIRCUITS DIVISION
www.ixysic.com
2R07
CPC3703
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Absolute Maximum Ratings @ 25ºC (Unless Otherwise Noted)
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Parameter Ratings Units
Drain-to-Source Voltage 250 VP
Gate-to-Source Voltage ±15 VP
Pulsed Drain Current 600 mA
Total Package Dissipation 11.1 W
Junction Temperature 125 ºC
Operational Temperature, Ambient -55 to +125 ºC
Storage Temperature -55 to +125 ºC
1 Mounted on 1"x1"x0.062" FR4 board.
Parameter Symbol Conditions Min Typ Max Units
Drain-to-Source Breakdown Voltage V(BR)DSX VGS= -5V, ID=100µA 250 - - V
Gate-to-Source Off Voltage VGS(off) VDS= 5V, ID=1mA -1.6 - -3.9 V
Change in VGS(off) with Temperature dVGS(off) /dT VDS= 5V, ID=1A - - 4.5 mV/ºC
Gate Body Leakage Current IGSS VGS=±15V, VDS=0V - - 100 nA
Drain-to-Source Leakage Current ID(off)
VGS= -5V, VDS=250V - - 1 µA
VGS= -5V, VDS=200V, T
A=125ºC - - 1 mA
Saturated Drain-to-Source Current IDSS VGS= 0V, VDS=15V 360 - - mA
Static Drain-to-Source On-State Resistance RDS(on) VGS= 0V, ID=200mA --4
Change in RDS(on) with Temperature dRDS(on) /dT - - 1.1 %/ºC
Forward Transconductance GFS ID= 100mA, VDS = 10V 225 - - m
Input Capacitance CISS VGS= -5V
VDS= 25V
f= 1MHz
-
327 350
pF
Common Source Output Capacitance COSS 51 65
Reverse Transfer Capacitance CRSS 27 35
Turn-On Delay Time td(on) VDD= 25V
ID= 150mA
VGS= 0V to -10V
Rgen= 50
-
23 35
ns
Rise Time tr820
Turn-Off Delay Time td(off) 17 25
Fall Time tf70 80
Source-Drain Diode Voltage Drop VSD VGS= -5V, ISD=150mA - 0.6 1.8 V
Thermal Resistance (Junction to Ambient) RJA - - 90 - ºC/W
Switching Waveform & Test Circuit
90%
10%
90% 90%
10%10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
on
t
d(on)
t
off
t
d(off)
INPUT
INPUT
OUTPUT
0V
V
DS
R
gen
0V
-10V
t
f
t
r
INTEGRATED CIRCUITS DIVISION
CPC3703
www.ixysic.com 3
R07
PERFORMANCE DATA (@25ºC Unless Otherwise Noted)*
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifi cations, please
contact our application department.
Output Characteristics
VDS (V)
ID (mA)
012345
1000
900
800
700
600
500
400
300
200
100
0
6
VGS=-1.0
VGS=-2.5
VGS=-2.0
VGS=-1.5
Instantaneous Transfer Characteristics
(VDS=5V, TA=TJ)
VGS (V)
ID (mA)
-3.5 -3.0 -2.5 -2.0 -1.5
350
300
250
200
150
100
50
0
+125ºC
-55ºC
+25ºC
RDS(on) Vs. Temperature
(VGS=0V, ID=200mA)
-50 0 50 100 150
8
7
6
5
4
3
2
1
RDS(on) (:)
Temperature (ºC)
VGS(off) Vs. Temperature
(VDS=10V, ID=1mA)
VGS(off) (V)
-50 0 50 100 150
-2.0
-2.5
-3.0
-3.5
-4.0
Temperature (ºC) VDS (V)
0.1 1 10 100 1000
ID (A)
0.001
0.01
0.1
1
Maximum Rated Safe Operating Area
Transconductance vs. Drain Current
(VDS=10V, TA=TJ)
ID (mA)
010203040
300
250
200
150
100
50
0
50 60 70 80 10090
GFS (m )
:
-55ºC
+125ºC
+25ºC
Temperature (ºC)
0 20 40 60 80 100 120 140
Power Dissipation (W)
Power Dissipation
vs. Ambient Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Capacitance vs. Drain-Source Voltage
(VGS=-5V)
VDS (V)
Capacitance (pF)
010203040
600
525
450
375
300
225
150
75
0
CRSS
COSS
CISS
On-Resistance vs. Drain Current
(VGS=0V)
ID (A)
0 0.1 0.2 0.3 0.4
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.5 0.6 0.7 0.8 0.9 1.0
RDS(on) (:)
INTEGRATED CIRCUITS DIVISION
www.ixysic.com
4R07
CPC3703
Manufacturing Information
Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to
the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper
operation of our devices when handled according to the limitations and information in that standard as well as to any
limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according
to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.
Device Moisture Sensitivity Level (MSL) Rating
CPC3703C MSL 1
ESD Sensitivity
This product is ESD Sensitive, and should be handled according to the industry standard JESD-625.
Reflow Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020
must be observed.
Device Maximum Temperature x Time
CPC3703C 260ºC for 30 seconds
Board Wash
IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to
remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or
Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be
used.
INTEGRATED CIRCUITS DIVISION
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated
Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to
its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe
property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.
Specification: DS-CPC3703-R07
©Copyright 2014, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
8/1/2014
For additional information please visit our website at: www.ixysic.com
5
CPC3703
Mechanical Dimensions
Dimensions
mm MIN / mm MAX
(inches MIN / inches MAX)
2.286 / 2.591
(0.090 / 0.102)
3.937 / 4.242
(0.155 / 0.167)
1.397 / 1.600
(0.055 / 0.063)
0.356 / 0.432
(0.014 / 0.017)
1.626 / 1.829
(0.064 / 0.072)
R 0.254
(R 0.010)
0.889 / 1.194
(0.035 / 0.047)
0.356 / 0.483
(0.014 / 0.019)
0.432 / 0.559
(0.017 / 0.022)
4.394 / 4.597
(0.173 / 0.181)
1.422 / 1.575
(0.056 / 0.062)
2.921 / 3.073
(0.115 / 0.121)
0.60
(0.024)
TYP 3
1.40
(0.055)
2.45
(0.096)
1.90
(0.075)
1.90
(0.074)
5.00
(0.197)
50º
PCB Land Pattern
Pin 1
1.118 / 1.270
(0.044 / 0.050) 50º
0.432 / 0.508
(0.017 / 0.020)
0.864 / 1.016
(0.034 / 0.040)
2.845 / 2.997
(0.112 / 0.118)
45º
CPC3703C
CPC3703CTR Tape & Reel
Dimensions
mm
(inches)
Embossment
Embossed
Carrier
177.8 Dia
(7.00 Dia)
Top Cover
Tape Thickness
0.102 Max
(0.004 Max)
W=12.00 ± 0.3
(0.472 ± 0.012)
B0=4.60 ± 0.1
(0.181 ± 0.004)
A0=4.80 ± 0.1
(0.189 ± 0.004)
P=8.00 ± 0.1
(0.315 ± 0.004)
K0=1.80 ± 0.1
(0.071 ± 0.004)
2.00 ± 0.05
(0.079 ± 0.002)
4.00 ± 0.1
(0.157 ± 0.004)
1.75 ± 0.1
(0.069 ± 0.004)
5.50 ± 0.05
(0.217 ± 0.002)
