CMA 50 P 1600 FC
advanced
V = V
kA²s
kA²s
kA²s
kA²s
Thyristor
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
R/D
V
IA
V
T
1.25
R0.65 K/W
R
2 4 31 5
min.
50
Applications:
V
RSM/DSM
V1700
50T = 25°C
VJ
T = °C
VJ
mA3
Package:
Part number
V = V
R
T = 25°C
VJ
I = A
T
V
T = °C
C
90
P
tot
190 WT = 25°C
C
T
VJ
150 °C-40
V
I
RRM
=
=1600
79
50
CMA 50 P 1600 FC
V
A
1600
max. non-repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage
virtual junction temperature
total power dissipation
Conditions Unit
1.52
T = 25°C
VJ
125
V
T0
V0.92T = °C
VJ
150
r
T
6.3 mΩ
V1.18T = °C
VJ
I = A
T
V
50
1.48
I = A
T
100
I = A
T
100
threshold voltage
slope resistance for power loss calculation only
Backside: Isolated
=50 A
● Housing:
Phase leg
i4-Pac
●
rDCB isolated backside
●
rIsolation Voltage 3000 V
●
rEpoxy meets UL 94V-0
●
rRoHS compliant
µA
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Motor control
● Power converter
● AC power controller
● Switch mode and resonant mode
power supplies
● Lighting and temperature control
125
V
RRM/DRM
V1600
max. repetitive reverse/forward blocking voltage T = 25°C
VJ
I
T(RMS)
A
180° sine 79
RMS forward current
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
32
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = °C
VJ
45
max. forward surge current
T = °C
VJ
150
I²t T = °C45
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T(AV)M
max. average forward current T = °C
VJ
150
T(RMS)
I
T(AV)M
800
865
2.31
2.25
A
A
A
A
680
735
3.20
3.12
1600
300 µs
IXYS reserves the right to change limits, conditions and dimensions. 20080515
Data according to IEC 60747and per diode unless otherwise specified
© 2008 IXYS all rights reserved
CMA 50 P 1600 FC
advanced
(di/dt)
cr
A/µ
s
150
repetitive, I =
T
VJ
=125°C
critical rate of rise of current
V
GT
gate trigger voltage V= 6 V T = °C25
(dv/dt) T=125°C
critical rate of rise of voltage
A/µ
s
500
V/µ
f = 50 Hz; t = 200 µs
IA;
V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
Symbol Definition Ratings
typ. max.min.Conditions Uni
t
150 A
T
P
G
= 0.45 di /dt A/µs
G
=0.3
DDRM
cr
V = ⅔ V
D DRM
GK
1000
1.4
V
T= °C-40
VJ
I
GT
gate trigger current V= 6 V T = °C25
DVJ
80 m
A
T= °C-40
VJ
1.6
V
120 m
A
V
GD
gate non-trigger voltage T= °C
VJ
0.2
V
I
GD
gate non-trigger current 5m
A
V = ⅔ V
D DRM
150
latching current T= °C
VJ
450 m
A
I
L
25tµs
p
=10
IA;
G
= 0.3 di /dt A/µs
G
=0.3
holding current T= °C
VJ
100 m
A
I
H
25V= 6 V
D
R = ∞
GK
gate controlled delay time T= °C
VJ
2µ
s
t
gd
25
IA;
G
= 0.5 di /dt A/µs
G
=0.5
V = ½ V
R DRM
turn-off time T= °C
VJ
150 µ
s
t
q
di/dt = A/µs;10 dv/dt = V/µs20
V =
R
100 V; I A
T
=20
V = ⅔ V
D DRM
tµs
p
=200
non-repetitive, I = 22 A
T
;
150
IXYS reserves the right to change limits, conditions and dimensions. 20080515
Data according to IEC 60747and per diode unless otherwise specified
© 2008 IXYS all rights reserved
CMA 50 P 1600 FC
advanced
I
RMS
A
per terminal 70
R
thCH
K/W0.20
T
stg
°C150
storage temperature -55
Weight g9
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
I is typically limited by: 1. terminal-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
F
C
N120
mounting force with clip 20
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
CMA 50 P 1600 FC 507603Tube 24
IXYS
Date Cod e
Part No.
Logo
UL listed
Product Marking
C
M
A
50
P
1600
FC
Thyristor (SCR)
Thyristor
(up to 1800 V)
Phase leg
i4-Pac (5)
=
=
=
CMA30P1600FC i4-Pac (5)
Similar Part Package
1)
1
)
Marking on Pr oduct
CMA50P1600FC
1600
Voltage class
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
RMS
V
ISOL
V3600
t = 1 second
V3000
t = 1 minute
isolation voltage
d
S
mm1.7
mm5.5
creapage distance on surface
d
A
striking distance through air
Part number
IXYS reserves the right to change limits, conditions and dimensions. 20080515
Data according to IEC 60747and per diode unless otherwise specified
© 2008 IXYS all rights reserved
CMA 50 P 1600 FC
advanced
Die konvexe Form des Substrates ist typ. < 0.05 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.05 mm over plastic
surface level of device bottom side
Outlines i4-Pac
IXYS reserves the right to change limits, conditions and dimensions. 20080515
Data according to IEC 60747and per diode unless otherwise specified
© 2008 IXYS all rights reserved