1
Item Symbol Ratings Unit
Drain-source voltage V DS 60
Continuous drain current ID±80
Pulsed drain current ID p ±320
Gate-source voltage VGS ±20
Maximum avalanche energy EAV *1 599
Maximum power dissipation PD125
Operating and storage Tch +150
Temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK2690-01 FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current VDS=60V VGS=0V
VGS=±20V
ID=40A
ID=40A VDS=25V
VCC=30V ID=75A
VGS=10V
RGS=10 Ω
V
V
µA
mA
nA
mΩ
S
pF
A
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 1.00
35.0 °C/W
°C/W
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 1mA VGS=0V
ID= 1mA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VGS=4V
VGS=10V
VDS=25V
VGS=0V
f=1MHz
L=100µH Tch=25°C
IF=160A VGS=0V Tch=25°C
IF=80A VGS=0V
-di/dt=100A/µs Tch=25°C
V
A
A
V
mJ
W
°C
°C
60
1.0 1.5 2.0
10 500
0.2 1.0
10 100
12 17
7.5 10
25.0 55.0
3500 5250
1250 1870
360 540
15 23
75 120
190 285
110 165
80 1.15 1.65
75 120
0.17
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
FAP-IIIB Series 200511
*1 L=0.125mH, Vcc=24V
http://www.fujielectric.co.jp/fdt/scd/
Min. Typ. Max. Units
TO-3P
http://store.iiic.cc/