AON5802B
30V Common-Drain Dual N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=4.5V) 7.2A
R
DS(ON)
(at V
GS
=4.5V) < 19mΩ
R
DS(ON)
(at V
GS
=4.0V) < 20mΩ
R
DS(ON)
(at V
GS
=3.1V) < 23mΩ
R
DS(ON)
(at V
GS
=2.5V) < 30mΩ
Typical ESD protection
HBM Class 3A
The AON5802B uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 2.5V while retaining a 12V
V
GS(MAX)
rating. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,
facilitated by its common-drain configuration.
30V
Top View Bottom View
DFN 2X5
D1/D2
G1
S1
S1
G2
S2
S2 Rg Rg
D1 D2
G1 G2
S1 S2
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Thermal Characteristics
1.6
Power Dissipation
A
P
DSM
W
T
A
=70°C 1
T
A
=25°C
V±12Gate-Source Voltage
Units
Maximum Junction-to-Ambient
A
°C/W
R
θJA
30
61 40
Parameter Typ Max
Junction and Storage Temperature Range -55 to 150 °C
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Drain-Source Voltage 30
55Pulsed Drain Current
B
Continuous Drain
Current A
7.2
5.6
T
C
=25°C
T
C
=70°C I
D
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
AC
4.5 75
6
Rev.6. 0: July 2013
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AON5802B
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±10 µA
BV
GSO
±12 V
V
GS(th)
Gate Threshold Voltage 0.6 1.1 1.5 V
I
D(ON)
55 A
12 15.5 19
T
J
=125°C 19 23.5 29
13 16 20 mΩ
14 18 23 mΩ
17 23 30 mΩ
g
FS
32 S
V
SD
0.71 0.9 V
I
S
2.5 A
C
iss
920 1150 pF
C
oss
105 pF
C
rss
52 pF
R
g
1.7 2.5 KΩ
Q
g
(10V)
17.5 24 nC
Q
g
(4.5V)
7.5 10 nC
Q
2.9
nC
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
Gate Source Charge
Total Gate Charge
SWITCHING PARAMETERS
V
GS
=10V, V
DS
=15V, I
D
=7A
Static Drain-Source On-Resistance
Diode Forward Voltage
mΩ
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage V
DS
=0V, I
G
=±250uA
Gate-Body leakage current
On state drain current V
GS
=4.5V, V
DS
=5V
Reverse Transfer Capacitance V
GS
=0V, V
DS
=15V, f=1MHz
V
DS
=V
GS,
I
D
=250µA
V
DS
=0V, V
GS
=±10V
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Forward Transconductance I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=7A
DYNAMIC PARAMETERS
V
GS
=2.5V, I
D
=4A
R
DS(ON)
V
GS
=3.1V, I
D
=5A
V
GS
=4.0V, I
D
=5A
I
D
=250µA, V
GS
=0V
V
GS
=4.5V, I
D
=7A
Q
gs
2.9
nC
Q
gd
2.5 nC
t
D(on)
0.32 0.42 µs
t
r
0.55 µs
t
D(off)
4.35 µs
t
f
2.4 µs
t
rr
21.6 26 ns
Q
rr
10 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-Off Fall Time
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, I
D
=7A
I
F
=7A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time I
F
=7A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=15V, R
L
=2.1Ω,
R
GEN
=3Ω
A: The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the steady state thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev.6. 0: July 2013 www.aosmd.com Page 2 of 5
AON5802B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
10
20
30
01234
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note D)
10
15
20
25
30
35
40
0 5 10 15 20
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note D)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note D)
VGS=2.5V
ID=4A
VGS=4.5V
ID=7A
25°C
125°C
V
DS
=5V
VGS=2.5V
VGS=4.5V
0
10
20
30
40
50
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note D)
VGS=2V
3.5V
4.5V
2.5V
3V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note D)
25°C
125°C
(Note D)
10
20
30
40
50
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note D)
ID=7A
25°C
125°C
Rev.6. 0: July 2013 www.aosmd.com Page 3 of 5
AON5802B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 5 10 15 20
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
1600
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction
-
to
-
Coss C
rss
VDS=15V
ID=7A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
VGS> or equal to 2.5V
Figure 9: Maximum Forward Biased Safe
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
C
=25°C
100
µ
s
0.1s
1s
10s
40
Figure 10: Single Pulse Power Rating Junction
-
to
-
Ambient (Note E)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
RθJC=75°C/W
Rev.6. 0: July 2013 www.aosmd.com Page 4 of 5
AON5802B
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
+
DUT
L
Vgs
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
dI/dt
I
rr
Q = - Idt
t
rr
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Ig
Vgs
-
+
VDC Vds
I
RM
Vdd
Vdd
Rev.6. 0: July 2013
www.aosmd.com
Page 5 of 5
