RLS-73
Diodes
Rev.C 1/3
Leadless High Speed Switching Diode
RLS-73
zApplication zExte rnal dimensions (Unit : mm)
High speed switching
ＬＬＤＳ
R1.4
1.4 1.4
5.0
1.6
zFeatures
1) Ultra small. (LLDS)
2) For surface mounting
3) High speed (trr=2ns Typ.) & high reliability.
ROHM : LLDS
JEDEC : LL-34
(YELLOW)
3.4±0.2
0.4 0.4
φ1.4±0.1
φ1.5MAX
CATHODE BAND
zConstruction zLand size figure (Unit : mm) zStructure
Silicon epitaxial planar
zTaping dimensions (Unit : mm)
1.8±0.2 4.0±0.1 φ1.0±0.2
0
4.0±0.1 2.0±0.05
3.5±0.05 1.75±0.1
8.0±0.3
0.3MAX
1.6±0.1
3.8±0.1
TE-11
1.5±0.1
0
zAbsolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isur
g
emA
Pm
Tj ℃
Tstg ℃
Parameter
W
ard current
er dissipation
175
-65 to +175
Limits
80
130
90
400
300
（1s）600
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Peak reverse current
Average rectified forw
Surge current
Pow
Junction temperature
Storage temperature
zElectrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
V
F
--1.2V
I
F
=100mA
I
R
--0.5µA
V
R
=80V
Ct - - 2.0 pF V
R
=0.5V , f=1MHz
Trr - - 4.0 ns V
R
=6.0V,I
F
=10mA,RL=50Ω
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
RLS-73
Diodes
Rev.C 2/3
zElectrical characteristic curves (Ta=25°C)
FORWARD VOLTAGE：VF(V)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
trr DISPERSION MAP
RESERVE RECOVERY TIME:trr(ns)
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=175℃
0.1
1
10
100
1000
10000
100000
1000000
0 1020304050607080
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=175℃
0.1
1
10
0102030
f=1MHz
0
10
20
30
40
50
60
70
80
90
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
5
10
15
20
8.3ms
Ifsm 1cyc
AVE:11.6A
0
0.5
1
1.5
2
2.5
3
AVE:1.46ns
Ta=25℃
VR=6V
IF=10mA
RL=50Ω
n=10pcs
0
5
10
15
20
110100
1
10
100
0.1 1 10 100
t
Ifsm
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
Rth(j-l)
AVE:926.5mV
Ta=25℃
IF=100mA
n=30pcs
Ta=25℃
VR=80V
n=30pcs
AVE:21.9nA
AVE:0.803pF
Ta=25℃
VR=0.5V
f=1MHz
n=10pcs
8.3ms
Ifsm
1cyc
8.3ms
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
900
910
920
930
940
950
AVE:926.5mV
Ta=25℃
IF=100mA
n=30pcs
0
0.005
0.01
0.015
0.02
0 20406080
Sin(θ＝180)
DC D=1/2
RLS-73
Diodes
Rev.C 3/3
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curve(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0 25 50 75 100 125 150 175
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0 25 50 75 100 125 150 175
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0
5
10
15
20
AVE:7.4kV
C=200pF
R=0Ω
AVE:2.2kV
C=100pF
R=1.5kΩ
Sin(θ＝180)
DC
D=1/2
TTj=175℃
D=t/T
tVR
Io
VR=40V
0A
0V
TTj=175℃
D=t/T
tVR
Io
VR=40V
0A
0V
Sin(θ＝180)
DC
D=1/2
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
