Logic-Level Power MOSFETs File Number 1877 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistors (LFET) ros(On): 1.49 Features: = Design optimized for 5-volt gate drive = Can be driven directly from QMOS, NMOS, TTL circuits = Compatible with automotive drive requirements = SOA is power-dissipation limited = Nanosecond switching speeds 8 High input impedance = Linear transfer characteristics 3 Majority carrier device sc N-CHANNEL ENHANCEMENT MODE Do s 92C$-33741 TERMINAL DIAGRAM The 2N6901 is an N-channel enhancement-mode silicon- gate power MOS field-effect transistor specifically designed for use with logic level (5 volt) driving sources in appli- cations such as programmable controllers, automotive switching, and solenoid drivers. This performance is TERMINAL DESIGNATION accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control directly from logic circuit supply voltages. The 2N6901 is supplied in the JEDEC TO-205AF metal package. SOURCE DRAIN (CASE) JEDEC TO-205AF MAXIMUM RATINGS, Absolute-Maximum Values (Tc = 25C): *DRAIN-SOURCE VOLTAGE, Voss .....-- sce cree c cece cence eee nee nee nena nee e eee eee e rene Herne Heer need Teens eres eee ee *DRAIN-GATE VOLTAGE (Ras = 1 MQ), Voaa *GATE-SOURCE VOLTAGE, Vas ...... cece reece cence eee nent eee eee eaten een ee FEES OEE EER EOE EEE Renee eH ee EEE ES *DRAIN CURRENT: RMS ContinuouS, lo... cece cece cece eee tence ee ne teeter eee eee EEE EEE E TEER CHEE TEU EO STONE EERE EEO ete e Eee e ete EES 1.69 A Pulsed, lom POWER DISSIPATION, Pr: FX Sa ed aaa 8.33 W Above Te = 25C Derate linearly 0.0667 W/C OPERATING AND STORAGE TEMPERATURE, T), Tatg.. 6-0. e cece cece ect e cee n cece cece eee nn en ee terse en eeteeenenenee -55 to +150C *LEAD TEMPERATURE, Ti: At distances = % in. (3.17 mm) from seating plane for 108 Max. ....... eee e eee eee tebe tenner ete een eters enteeeene 260C *In accordance with JEDEC registration data. 5-63Logic-Level Power MOSFETs 2N6901 ELECTRICAL CHARACTERISTICS at Case Temperature (Tc) = 25C unless otherwise specifled. CHARACTERISTIC TEST CONDITIONS LIMITS UNITS Min. |Max. *| Drain-Source Breakdown Voltage BVoss lo = 1mMA, Vas = 0 100 | Vv | Gate Threshold Voltage Ves(th) Ves = Vos, lo = 1mA 1 2 Vv | Zero Gate Voltage Drain Current loss Vos = 80 V _ 1 Tc = 125C, Vos = 80 V -- | 50 HA *| Gate-Source Leakage Current less Ves = +10 V, Vos = 0 |100}] nA *! Drain-Source On Voltage Vos(on)@ lp = 1.07 A, Vas = 5 V $15 Vv Ip = 1.69 A, Vas = 5 V - | 2.4 *| Static Drain-Source On Resistance Tps(on)a@ Ip = 1.07 A, Ves = 5 V {1.4 o Te = 125C, Ip = 1.07 A, Vas = 5 V | 26 *| Forward Transconductance raf Vos = 5 V, ln = 1.07 A 500 {2000 | mmho | Input Capacitance Cis Vos = 25 V 50 | 200 *| Output Capacitance Coss Ves = OV 20 | 80 pF *| Reverse Transfer Capacitance Cos t= 0.1 MHz 5 20 *| Turn-On Delay Time ta(on) Voo = 50 V ~- | 25 *| Rise Time tr lo =1.07A | 45 ns *| Turn-Off Delay Time ta(off) Rogen = Ros = 152 | 45 *| Fall Time tr Ves =5V -- | 80 *| Thermal Resistance Junction-to-Case Rac 1 15 | C/W SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS - LIMITS CHARACTERISTIC TEST CONDITIONS UNITS Min. |Max. | Diode Forward Voltage Ve0 Iso = 1.69 A 0.8 | 1.6 Vv Reverse Recovery Time tr lp = 1A, die/dt = 50 A/us - | 250 ns In accordance with JEDEC registration data. Pulsed: Pulse duration = 300 ws max., duty cycle = 2%, OPERATION IN THIS ARE HIS LIMITED BY rg (oq) DRAIN CURRENT (1p) A CASE TEMPERATURE(Tc )= 25C {CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE) DRAIN-TO~SOURCE VOLTAGE (Vpg) V 92CM-40707 Fig. 1 - Maximum operating argas.Logic-Level Power MOSFETs 2N6901 4 w 4 e a 2 > a ot 3 x wo w a x = w E < oO POWER DISSIPATION (Pp )-W 0 300 100-150. 200 250 CASE TEMPERATURE (To )C g2cs-407e1 JUNCTION TEMPERATURE (Ty )*C 9ees-40730 Fig. 2 - Power dissipation vs. temperature derating curve. Fig. 3 - Typical normalized gate threshold voltage as a function of junction temperature. Ip2t.07a 2} Yes7 + 5V Ypsg 715 PULSE TEST PULSE DURATICN= 80gs DUTY CYCLE 2% st ON RESISTANCE Crps (on ON-STATE DRAIN CURRENT [Ip(on)]-A NORMALIZED ORAIN -TO-SOURCE 2 Te =-40C 3 4 928-4073! GATE- TO- SOURCE VOLTAGE (Vgs)-V Fig. 4 - Typical normalized drain-to-source on resistance to junction temperature. JUNCTION TEMPERTURE (Ty }-C 92CS - 37343 Fig. 5 - Typical transfer characteristics. PULSE TEST oo PULSE DURATION? 80us WO DUTY CYCLE < 2% FREQUENCY (f) = 1 MHz w a 1 2 w o Zz t FE 2 a < oO ot 2 3 4 +5 6 0 10 20 30 40 50. 60 70 ORAIN CURRENT (Ip}-A 92CS- 37346 DRAIN-TO-SOURCE VOLTAGE (Vpg)-V_ s2cs- 36158 Fig. 6 - Typical drain-to-source on resistance as a function of Fig. 7 - Capacitance as a function of drain-to-source voltage. drain current. 5-65Logic-Level Power MOSFETs 2N6901 Vos =15V PULSE TEST aen PULSE DURATION= 8Ous DUTY CYCLE s 2% OT Yo i TO SCOPE | | = Yoo x i 50V \ | KELVIN 1 wT | CONTACT | OV I 7 | ofa ase | 2 t TT See + 92Cs- 40732 Fig. 9 - Switching time test circuit. ORAIN CURRENT (Ip)A 92CS-37347 Fig. 8 - Typical forward transconductance as a function of drain current. 5-66High-Reliability Power MOSFETs JAN, JANTX, and JANTXV Solid-State Power Devices The major military specification used for the procurement of standard solid-state devices by the military is MiL-S- 19500, which covers the devices such as discrete transistors, thyristors, and diodes. MIL-S-19500 is the specification for the familiar JAN type solid state devices. Detailed electrical specifications are prepared as needed by the three military services and coordinated by the Defense Electronic Supply Center (DESC). Levels of reliability are defined by MIL-S-19500. JAN types receive Group A, Group B, and Group C lot sampling only, and are the least expensive. JANTX types receive 100 QPL Approved Types JAN, JANTX, and JANTXV percent process conditioning, and power conditioning, and are subjected to lot rejection based on delta parameter criteria in addition to Group A, Group B, and Group C lot sampling. JANTXV types are subjected to 100 percent (JTXV) internal visual inspection in addition to ail of the JANTX tests in accordance with MIL-STD-750 test methods and MIL-S-19500. DESC publishes QPL-19500", a Qualified Products List of all types and suppliers approved to produce and brand devices in accordance with MIL-S-19500. The following tables list approved QPL types and types that are process of testing preliminary to QPL approval by DESC, respectively. Gustom high-reliability selections of Harris Power MOSFETs can also be supplied with similar process and power conditioning tests and delta criteria. Harris is presently qualified on the following devices. Prices and delivery quotations may be obtained from your local sales representative. JAN and JANTX Power MOSFETs N-Channel MIL-S- . Py lo BVoss tos (on) Types 19500/ Package Channel (w) (A) ) 0 2N6756 542 TO-204AA N 76 14 100 0.18 2N8758 542 TQ-204AA N 75 9 200 0.4 2N6760 $42 TO-204AA N 75 5.5 400 1 2N6762 542 TO-204AA N 75 45 500 15 2N6764 543 TO-204AE N 150 38 100 0,055 2N6766 543 TO-204AE N 450 30 200 0.085 2N6768 $43 TO-204AA N 450 14 400 03 2N6770 543 TO-204AA N 150 12 500 04 2N6782 556 TO-205AF N 15 3.5 100 0.6 2N6784 556 TO-205AF N 15 2.25 200 15 2N6788 555 TO-205AF N 20 6 100 0.3 2N6790 55 TO-205AF N 20 3.6 200 0.8 2N6792 555 TO-205AF N 20 2 400 18 2N6794 55 TO-205AF N 20 15 500 3 2N6796 57 TO-205AF N 25 8 100 0.18 2N6798 557 TO-205AF N 25 55 100 0.4 2N6800 557 TO-205AF N 25 3 400 4 2N6802 557 TO-205AF N 25 25 500 45 P-Channel MIL-S- P, Ib BVoss tos (on) Types 49500/ Package Channel w) A) v) a 2N6895 565 TO-205AF Pp 8.33 -15 -100 3.65 2N6896 565 TO-2044A P 60 -6 ~100 0.6 2N6897 565 TO-204AA P 100 -12 -100 0.3 2N6898 565 TO-204AA Pp 150 -25 -100 0.2 2N6849 564 TO-205AF P 25 -6.5 -100 0.3 2N6851 564 TO-205AF P 26 _ 74.0 -200 08 N-Channel Logic- MIL-S- . Py lo BVoss tos (on) Level Types 19500/ Package Channel ~ (A) ) a 2N6901 566 TO-205AF N 8.33 15 100 1.4 2N6902 566 TO-2044A N 7 12 100 02 2N6903 566 TO-205AF N 8.33 15 200 3.65 2N6904 566 TO-204AA N 75 8 200 0.65