© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3 1Publication Order Number:
MPSH17/D
MPSH17
Preferred Device
CATV Transistor
NPN Silicon
Features
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 15 Vdc
CollectorBase Voltage VCBO 20 Vdc
EmitterBase Voltage VEBO 3.0 Vdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD350
2.81 mW
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Res i stance, Junction to Ambient
(Printed Circuit Board Mounting) RqJA 357 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MPSH17RLRA TO−92 2,000/Tape & Ree
l
MPSH17RLRAG TO−92
(Pb−Free) 2,000/Tape & Ree
l
Device Package Shipping
MPSH17 TO−92 5,000 Units/Box
MPSH17G TO−92
(Pb−Free) 5,000 Units/Box
Preferred devices are recommended choices for future use
and best overall value.
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
MPSH17 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
TO−92
CASE 29−11
STYLE 2
123
MARKING
DIAGRAM
MPS
H17
AYWW G
G
MPSH17
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) V(BR)CEO 15 Vdc
CollectorBase Breakdown Voltage
(IC = 100 mAdc, IE = 0) V(BR)CBO 20 Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0) ICBO 100 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc) hFE 25 250
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) 0.5
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) fT800 MHz
Collector−Base Capacitance
(VCB = 10 Vdc, f = 1.0 MHz) Ccb 0.3 0.9 pF
Small−Signal Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 30
Noise Figure
(IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 W, f = 200 MHz) NF 6.0 dB
FUNCTIONAL TEST
Amplifier Power Gain
(IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 W, f = 200 MHz) Gpe 24 dB
MPSH17
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3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
TO−92 (TO−226)
CASE 29−11
ISSUE AL
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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MPSH17/D
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