1214-300M Rel 3
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324
GENERAL DESCRIPTION
The 1214-300M is an internally matched, COMMON BASE transistor
capable of providing 300 Watts of pulsed RF output power at one hundred
fifty microseconds pulse width, ten percent duty factor across the band 1200
to 1400 MHz. This hermetically solder-sealed transistor is specifically
designed for L-Band radar applications. It utilizes gold metalization and
diffused emitter ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55ST, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC 600 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 70 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 20 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200oC
Operating Junction Temperature + 200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS TEST CONDITIONS MIN TYP MAX
UNITS
Pout
Pg
ηc
Rl
VSWR1
VSWRs
Power Out
Power Gain
Collector Efficiency
Input Return loss
Load Mismatch Tolerance
Load Mismatch - Stability
Freq = 1200 – 1400 MHz
Vcc = 40 Volts
Pin = 40 Watts
Pulse Width = 150µs
Duty Factor = 10%
300
8.75
50
10.0
55
400
2:1
1.5:1
Watts
dB
%
dB
Note 1: Pulse condition of 150µsec, 10%.
Bvces
Ices
Iebo
θjc1
Collector to Emitter Breakdown
Collector to Emitter Leakage
Emitter to Base Leakage
Thermal Resistance
Ic = 80 mA
Vce = 40 Volts
Vebo = 3.0 Volts
Rated Pulse Condition
70
10
5.0
0.29
Volts
mA
mA
oC/W
Issue April 2005
1214– 300M
300 Watts - 40 Volts, 150µs, 10%
Radar 1200 - 1400 MHz