51408 MS 20080507-S00003 / 13008 MS 20080117-S00001 / N2107 MS PC 20071022-S00007 No. A0975-1/6
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
sproductsor
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
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LA0151CS
Overview
The LA0151CS is a photo IC for ultra-small illumination sensor. It enables to be mounted on a very small limited space
such as on the mobile phones which is becoming small and thinner and on other mobile applications.
Functions
Linear current output
Low gain mode function [low gain : -35dB]
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Symbol Conditions Ratings Unit
Maximum supply voltage VCC 6V
Operating temperature Topr -30 to +85 °C
Storage temperature Tstg -40 to +100 °C
Recommended operating conditions and operating voltage range at Ta = 25°C
Ratings
Parameter Symbol Conditions
min typ max Unit
Recommended supply voltage VCC 2.2 3.3 5.5 V
SW pin low voltage Vl Normal gain mode 0 0.4 V
SW pin high voltage Vh Low gain mode 2.1 V
Monolithic Linear IC
For Ultra-small illumination Sensor
Photo IC
Orderin
g
numbe
r
: ENA0975B
LA0151CS
No.A0975-2/6
Ipd
LA0151CS
VCC
OU
T
A
A
Light
source
Electrical and optical characteristics at Ta = 25°C, VCC = 3.3V
Ratings
Parameter Symbol Conditions min typ max Unit
Current dissipation (1) *1, *3 ICC Ev = 1000 lx, RL = 5k, N mode 90 150 210 µA
Current dissipation (2) *1, *3 ICC Ev = 1000 lx, RL = 5k, L mode 42 70 98 µA
Output current (1) *1, *3 IO1 Ev = 100 lx, N mode 6 8 10 µA
Output current (2) *1, *3 IO2 Ev = 1000 lx, N mode 60 80 100 µA
Output current (3) *1, *3 IO3 Ev = 100 lx, L mode 0.12 0.16 0.2 µA
Output current (4) *1, *3 IO4 Ev = 1000 lx, L mode 1.2 1.6 2.0 µA
Dark current Ileak Ev = 0 lx, N mode, L mode 0.1 µA
Temperature coefficient *2 Itc Ev = 100 lx, N mode, L mode,
Ta = -20 to 60°C 0.34 %/°C
Rise time (1) *4 Tr1 Ev = 1000 lx, RL = 5k, N mode 15 40 µs
Rise time (2) *4 Tr2 Ev = 1000 lx, RL = 500k, L mode 20 50 µs
Fall time (1) *4 Tf1 Ev = 1000 lx, RL = 5k, N mode 150 500 µs
Fall time (2) *4 Tf2 Ev = 1000 lx, RL = 500k, L mode 150 500 µs
Peak sensitivity wave length *2 λp 550 nm
Saturation output voltage *5 VO Ev = 1000 lx, RL = 150k, N mode 3.0 3.2 V
N mode and L mode stand for the normal gain mode and the low gain mode, respectively.
*1. Measured with the standard light source A. White LED is used instead in the mass production line.
*2. Design guaranteed item
*3. Test circuit for measuring current dissipation and output current
*4. Measuring method of rise time (Tr) and fall time (Tf)
*5. Reference value : min = 2.6V and typ = 2.8V when VCC = 2.9V
Ipd
0A
VOUT
90%
10%
TfTr
GND
Ipd
LA0151CS
VCC
OUT
Pulse drive
White LED
LA0151CS
No.A0975-3/6
Package Dimensions
unit : mm (typ)
3350A
Pad layout
Ball pitch : 0.5mm, Ball size : 0.18mm
Pad layout (Photos)
* The photo diode is located in pin 3. Be careful not to mistake the pin 1 mark for the photo diode.
Pin No. Pin Name Function
1 VCC Power supply
2 SW Switch
3 GND Ground
4 OUT Output
4 1
3 2
1 4
2 3
<Bottom View>
<Top View>
SANYO : ODCSP4(1.01X1.01)
0.5
0.5
0.18
2
12
43
3
1
4
1.01
1.01
(0.5)
0.1
0.67 MAX
SIDE VIEW
TOP VIEW SIDE VIEW BOTTOM VIEW
Top View Bottom View
1
1,VCC
2,SW
3,Gnd
4,Out
2
4
3
4
3
1
2
Photo diode. Onl
y
this part looks dark on the product.
Pin 1 mark
It is located at the center of the bottom
of the pakage.
LA0151CS
No.A0975-4/6
Internal block diagram
Chip pattern and photo-receiving pattern diagrams
1010µm
249.5µm
223µm
80.5µm
69µm
1010µm
162µm
80.5µm
105µm
* Pin 1 is on the upper left.
LA0151CS chip pattern diagram (top view)
LA0151CS photo-receiving pattern enlarged diagram (effective area)
105µm
15µm17µm
10µm
249.5µm
PD
1
4
2
3
VCC
OUT
SW
GND
Current
amplifier
LA0151CS
No.A0975-5/6
0.001
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
0.01
0.1
1
10
100
1000
10
2
3
5
7
2
3
5
7
100
1000
1 10010
2 3 57 2 3 57 2 3 57 2 3 57
1k 100 1k
2 3 57 2 3 57 2 3 5723 57
10k
0.001
0.001
10 1
123 57 23 57 23 57 23 57 23 57
10 100 1k 10k 100k 200 400 600 800 100
0
Illuminance -- lx
Output current, IO -- µA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
2345 3456
Supply voltage, VCC -- -- V
Relative output current ratio, RIO -- ratio
RIO -- Ta
0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.8
1
0.2
0.4
0.6
1.4
1.2
--60 --40 --20 0 20 40 60 80 100 0 20 40 60 80 100120
Ambient temperature, Ta -- °C
Relative output current ratio, RIO -- ratio
ID -- Ta
RS -- λ
1.E-06
1.E-05
2
3
5
7
1.E-04
2
3
5
7
1.E-03
2
3
5
7
1.E-02
2
3
5
7
1.E-01
2
3
5
7
2
3
5
7
1.E+00
--60 --40 --20 120
Ambient temperature, Ta -- °C
Dark current, ID -- µA
Wavelength, λ -- nm
Relative sensitivity, RS -- ratio
26
Supply voltage, VCC -- V
Relative current drain ratio, RICC -- ratio
110 10
k
Illuminance -- lx
Current drain, ICC -- µA
IO -- Illuminance
Illuminance -- lx
Output voltage, VO -- V
VO -- Illuminance
ICC -- Illuminance
RIO -- VCC RICC -- VCC
N gain
N gain
L gain
L gain
N gain
N gain
N gain
L gain
N gain
L gain
N gain
L gain
LA0151 ES2 CSP
Human eye
@1000lx
VCC = 3.3V
RL = 15k
@1000lx
LA0151CS
PS No.A0975-6/6
This catalog provides information as of May, 2008. Specifications and information herein are subject
to change without notice.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
0
0.2
0.4
0.6
0.8
1
0.2
0.4
0.6
0.8
1
1.2
0
1.2
--90 --60 --30 300 60 0 30 6090
Angle, deg -- °
Photopic luminous efficiency, PLE -- ratio
--90 --60 --30 90
Angle, deg -- °
Photopic luminous efficiency, PLE -- ratio
PLE -- deg N gain PLE -- deg L gain
@1000lx @1000lx