VSMY12850
www.vishay.com Vishay Semiconductors
Rev. 1.0, 19-Mar-15 1Document Number: 84234
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 850 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY12850 is an
infrared, 850 nm, top looking emitting diode based on
GaAlAs surface emitter chip technology with extreme high
radiant intensities, high optical power and high speed,
molded in clear, untinted PCB based package (with inner
lens) for surface mounting (SMD).
APPLICATIONS
• Emitter for proximity applications
• IR touch panels
• Photointerrupters
• Optical switch
FEATURES
• Package type: surface mount
• Package form: top view
• Dimensions (L x W x H in mm): 3.2 x 1.6 x 1.1
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity: ϕ = ± 40°
• Suitable for high pulse current operation
• Floor life: 168 h, MSL 3, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMY12850 16 ± 40 850 10
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY12850 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Top view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF70 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV140 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature acc. figure 10, J-STD-020 Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, soldered on PCB RthJA 390 K/W
VSMY12850
www.vishay.com Vishay Semiconductors
Rev. 1.0, 19-Mar-15 2Document Number: 84234
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Forward Voltage vs. Ambient Temperature
0
20
40
60
80
100
120
140
0 20406080100
PV- Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
RthJA = 390 K/W
0
10
20
30
40
50
60
70
80
0 20406080100
IF- Forward Current (mA)
Tamb - Ambient Temperature (°C)
RthJA = 390 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 20 mA, tp = 20 ms VF1.1 1.4 1.9 V
IF = 70 mA, tp = 20 ms VF1.65 V
IF = 1 A, tp = 100 μs VF2.9 V
Temperature coefficient of VFIF = 20 mA TKVF -1.7 mV/K
Reverse current IRnot designed for reverse operation μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 mW/cm2CJ5pF
Radiant intensity
IF = 20 mA, tp = 20 ms Ie2.3 4.7 mW/sr
IF = 70 mA, tp = 20 ms Ie16 mW/sr
IF = 1 A, tp = 100 μs Ie130 mW/sr
Radiant power IF = 70 mA, tp = 20 ms φe40 mW
Temperature coefficient of radiant
power IF = 20 mA TKφe-0.19 %/K
Angle of half intensity ϕ± 40 deg
Peak wavelength IF = 20 mA λp830 850 870 nm
Spectral bandwidth IF = 20 mA Δλ 35 nm
Temperature coefficient of λpIF = 20 mA TKλp0.25 nm/K
Rise time IF = 100 mA, 20 % to 80 % tr10 ns
Fall time IF = 100 mA, 20 % to 80 % tf10 ns
1
10
100
1000
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2
IF - Forward Current (mA)
VF - Forward Voltage (V)
tp = 100 μs
1.20
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
1.75
1.80
-60 -40 -20 0 20 40 60 80 100
VF - Forward Voltage (V)
Tamb - Ambient Temperature (°C)
IF = 20 mA
VSMY12850
www.vishay.com Vishay Semiconductors
Rev. 1.0, 19-Mar-15 3Document Number: 84234
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity vs. Wavelength
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
90
95
100
105
110
115
-60 -40 -20 0 20 40 60 80 100
VF, rel - Relative Forward Voltage (%)
Tamb - Ambient Temperature (°C)
IF = 20 mA
tp = 20 ms
0.1
1
10
100
1000
1 10 100 1000
Ie - Radiant Intensity (mW/sr)
IF - Forward Current (mA)
tp = 100 μs
80
85
90
95
100
105
110
-60 -40 -20 0 20 40 60 80 100
Ie, rel - Relative Radiant Intensity (%)
Tamb - Ambient Temperature (°C)
IF = 20 mA
tp = 20 ms
0
10
20
30
40
50
60
70
80
90
100
700 750 800 850 900 950 1000
Ie, rel - Relative Radiant Intensity (%)
λ - Wavelength (nm)
IF = 20 mA
Ie, rel - Relative Radiant Intensity
λ - Wavelength (nm)
0.6
80°
0°
0.7
0.4 0.2 0
30°
70°
60°
50°
40°
10° 20°
1.0
0.9
0.8
ϕ - Angular Displacement
VSMY12850
www.vishay.com Vishay Semiconductors
Rev. 1.0, 19-Mar-15 4Document Number: 84234
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOLDER PROFILE
Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, according to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters: VSMY12850
Recommended Solder Pad
VSMY12850
www.vishay.com Vishay Semiconductors
Rev. 1.0, 19-Mar-15 5Document Number: 84234
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VSMY12850
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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