VS-HFA08TB60SPbF
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HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Specified at operating conditions
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA08TB60S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 8 A continuous current, the
VS-HFA08TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB60S is ideally suited
for applications in power supplies (PFC boost diode) and
power conversion systems (such as inverters), motor drives,
and many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package TO-263AB (D2PAK)
IF(AV) 8 A
VR600 V
VF at IF1.4 V
trr (typ.) 18 ns
TJ max. 150 °C
Diode variation Single die
TO-263AB (D2PAK)
Base
cathode
Anode
13
2
N/C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage VR600 V
Maximum continuous forward current IFTC = 100 °C 8
ASingle pulse forward current IFSM 60
Maximum repetitive forward current IFRM 24
Maximum power dissipation PD
TC = 25 °C 36 W
TC = 100 °C 14
Operating junction and storage temperature range TJ, TStg -55 to +150 °C
VS-HFA08TB60SPbF
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage VBR IR = 100 μA 600 - -
V
Maximum forward voltage VFM
IF = 8.0 A
See fig. 1
-1.41.7
IF = 16 A -1.72.1
IF = 8.0 A, TJ = 125 °C -1.41.7
Maximum reverse
leakage current IRM
VR = VR rated
TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 -0.35.0
µA
- 100 500
Junction capacitance CTVR = 200 V See fig. 3 - 10 25 pF
Series inductance LSMeasured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 6
trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V -18-
nstrr1 TJ = 25 °C
IF = 8.0 A
dIF/dt = 200 A/μs
VR = 200 V
-3755
trr2 TJ = 125 °C -5590
Peak recovery current IRRM1 TJ = 25 °C -3.55.0
A
IRRM2 TJ = 125 °C -4.58.0
Reverse recovery charge
See fig. 7
Qrr1 TJ = 25 °C - 65 138 nC
Qrr2 TJ = 125 °C - 124 360
Peak rate of fall of
recovery current during tb
See fig. 8
dI(rec)M/dt1 TJ = 25 °C - 240 -
A/µs
dI(rec)M/dt2 TJ = 125 °C - 210 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature Tlead 0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case RthJC --3.5
K/W
Thermal resistance,
junction to ambient RthJA Typical socket mount - - 80
Weight -2.0- g
-0.07- oz.
Marking device Case style TO-263AB (D2PAK) HFA08TB60S
VS-HFA08TB60SPbF
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Revision: 26-Feb-16 3Document Number: 94048
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Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
0.4 3.20.81.2
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
2.0 2.8
0.1
2.41.6
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.01
0.1
1
10
100
0
VR - Reverse Voltage (V)
IR - Reverse Current (µA)
TJ = 125 °C
TJ = 25 °C
1000
100 600500
300
0.001
TJ = 150 °C
400200
10
100
1 10 100 1000
1
VR - Reverse Voltage (V)
CT - Junction Capacitance (pF)
TJ = 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Response
Single pulse
(thermal response)
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
VS-HFA08TB60SPbF
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Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 6 - Typical Recovery Current vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
80
40
0
100 1000
dI
F
/dt (A/µs)
t
rr
(ns)
VR = 200 V
TJ = 125 °C
TJ = 25 °C
60
20
IF = 16 A
IF = 8 A
IF = 4 A
20
15
0
100 1000
dI
F
/dt (A/µs)
I
rr
(A)
IF = 16 A
IF = 8 A
IF = 4 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
5
10
500
0
100 1000
dIF/dt (A/µs)
Qrr (nC)
300 IF = 16 A
IF = 8 A
IF = 4 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
100
400
200
10 000
1000
100 1000
dIF/dt (A/µs)
dI(rec)M/dt (A/µs)
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 16 A
IF = 8 A
IF = 4 A
100
VS-HFA08TB60SPbF
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Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 1 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-HFA08TB60SPbF
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Revision: 26-Feb-16 6Document Number: 94048
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ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-HFA08TB60SPBF 50 1000 Antistatic plastic tube
VS-HFA08TB60STRRP 800 800 13" diameter reel
VS-HFA08TB60STRLP 800 800 13" diameter reel
2- HEXFRED
®
family
1-Vishay Semiconductors product
3- Process designator: A = electron irradiated
4-Current rating (08 = 8 A)
5- Package outline (TB = TO-220, 2 leads)
6-Voltage rating (60 = 600 V)
7- S = D
2
PAK
-
•
PbF = lead (Pb)-free
9
8
•
TRL = tape and reel (left oriented)
•
TRR = tape and reel (right oriented)
Device code
51 32 4 6 7 8 9
VS- HF A 08 TB 60 S TRL PbF
-
•
None = tube
•
P = lead (Pb)-free, for tape and reel packaged
, for tube packaged
Outline Dimensions
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D2PAK
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC
®
outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Legal Disclaimer Notice
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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