MRF174 - Motorola / Freescale Semiconductor

MRF174RF DEVICE DATA

The RF MOSFET Line

RF Power Field Effect Transistor

N–Channel Enhancement–Mode

Designed primarily for wideband large–signal output and driver stages up to

200 MHz frequency range.

•Guaranteed Performance at 150 MHz, 28 Vdc

Output Power = 125 Watts

Minimum Gain = 9.0 dB

Efficiency = 50% (Min)

•Excellent Thermal Stability, Ideally Suited For Class A

Operation

•Facilitates Manual Gain Control, ALC and Modulation

Techniques

•100% Tested For Load Mismatch At All Phase Angles

With 30:1 VSWR

•Low Noise Figure — 3.0 dB Typ at 2.0 A, 150 MHz

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage VDSS 65 Vdc

Drain–Gate Voltage

(RGS = 1.0 MΩ)VDGR 65 Vdc

Gate–Source Voltage VGS ±40 Vdc

Drain Current — Continuous ID13 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°CPD270

1.54 Watts

W/°C

Storage Temperature Range Tstg –65 to +150 °C

Operating Junction Temperature TJ200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case RθJC 0.65 °C/W

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Order this document

by MRF174/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF174

125 W, to 200 MHz

N–CHANNEL MOS

BROADBAND RF POWER

FET

CASE 211–1 1, STYLE 2

 Motorola, Inc. 1997

REV 7

MRF174

2 RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 50 mA) V(BR)DSS 65 — — Vdc

Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS — — 10 mAdc

Gate–Source Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 1.0 µAdc

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 6.0 Vdc

Forward T ransconductance (VDS = 10 V, ID = 3.0 A) gfs 1.75 2.5 — mhos

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss — 175 — pF

Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss — 190 — pF

Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss — 40 — pF

FUNCTIONAL CHARACTERISTICS (Figure 1)

Noise Figure

(VDD = 28 Vdc, ID = 2.0 A, f = 150 MHz) NF — 3.0 — dB

Common Source Power Gain

(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA) Gps 9.0 11.8 — dB

Drain Efficiency

(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA) η50 60 — %

Electrical Ruggedness

(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA,

VSWR 30:1 at all Phase Angles)

ψNo Degradation in Output Power

Figure 1. 150 MHz Test Circuit

C1 — 15 pF Unelco

C2 — Arco 462, 5.0–80 pF

C3 — 100 pF Unelco

C4 — 25 pF Unelco

C6 — 40 pF Unelco

C7 — Arco 461, 2.7–30 pF

C5, C8 — Arco 463, 9.0–180 pF

C9, C11, C14 — 0.1 µF Erie Redcap

C10 — 50 µF, 50 V

C12, C13 — 680 pF Feedthru

D1 — 1N5925A Motorola Zener

L1 — #16 A WG, 1–1/4 Turns, 0.213″ ID

L2 — #16 A WG, Hairpin 0.25″

0.062″

L3 — #14 A WG, Hairpin 0.47″

0.2″

L4 — 10 T urns #16 AWG Enameled Wire on R1

RFC1 — 18 T urns #16 AWG Enameled Wire, 0.3″ ID

R1 — 10 Ω, 2.0 W

R2 — 1.8 kΩ, 1/2 W

R3 — 10 kΩ, 10 Turn Bourns

R4 — 10 kΩ, 1/4 W

BIAS

ADJUST +

–

RF OUTPUT

RF INPUT

VDD = 28 V

–

C9 C10 D1R3

C11

C12 L4

C13

C14

RFC1

DUTC1 C2

L1 L2

C4 C5

C6 C7

MRF174RF DEVICE DATA

VDD, SUPPLY VOLTAGE (VOLTS)

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power

Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage

Figure 6. Output Power versus Supply Voltage Figure 7. Power Gain versus Frequency

Pout, OUTPUT POWER (WATTS)

140

0Pin, INPUT POWER (W ATTS)

120

100

04 6 8 10 12 14

Pout, OUTPUT POWER (WATTS)

0Pin, INPUT POWER (W ATTS)

046810121416

Pout, OUTPUT POWER (WATTS)

140

120

100

160

12 2814 16 18 20 22 24 26

VDD, SUPPLY VOLTAGE (VOLTS)

Pout, OUTPUT POWER (WATTS)

140

120

100

160

12 2814 16 18 20 22 24 26

VDD, SUPPLY VOLTAGE (VOLTS)

Pout, OUTPUT POWER (WATTS)

140

120

100

160

12 2814 16 18 20 22 24 26

GPS, POWER GAIN (dB)

20 f, FREQUENCY (MHz)

40 60 80 100 120 140 160 180 200 220

f = 100 MHz

VDD = 28 V

IDQ = 100 mA

150 MHz

200 MHz 150 MHz

200 MHz

VDD = 13.5 V

IDQ = 100 mA

f = 100 MHz Pin = 6 W

4 W

2 W

Pin = 12 W

8 W

4 W

Pin = 16 W

12 W

8 W

Pout = 125 W

VDD = 28 V

IDQ = 100 mA

f = 100 MHz

IDQ = 100 mA

f = 150 MHz

IDQ = 100 mA

f = 200 MHz

MRF174

4 RF DEVICE DATA

Figure 8. Output Power versus Gate Voltage Figure 9. Drain Current versus Gate Voltage

(Transfer Characteristics)

Figure 10. Gate–Source Voltage versus

Case Temperature Figure 11. Capacitance versus Drain Voltage

Figure 12. DC Safe Operating Area

–8 0

f = 150 MHz

Pin = CONSTANT

IDQ = 100 mA

VDD = 28 V

TYPICAL DEVICE SHOWN, VGS(th) = 3 V

–6 –4 –2 2 4 6–10

VGS, GATE–SOURCE VOLTAGE (VOLTS)

–12–14

Pout, OUTPUT POWER (WATTS)

140

120

100

160

VGS, GATE-SOURCE VOLTAGE (NORMALIZED)

–25 TC, CASE TEMPERATURE (°C)

1.2

0.9

0.8 25 50 75 100 125 150 175

VDD = 28 V

1.1

3 A

ID = 4 A

100 mA

2 A

1000

04 812 20242816

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

C, CAPACIT ANCE (pF)

Coss

Ciss

Crss

VGS = 0 V

f = 1 MHz

900

800

700

600

500

400

300

200

100

ID, DRAIN CURRENT (AMPS)

VGS, GATE–SOURCE VOLTAGE (VOLTS)

123456

VDS = 10 V

TYPICAL DEVICE SHOWN, VGS(th) = 3 V

ID, DRAIN CURRENT (AMPS)

1VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

TC = 25°C

0.6

0.4

0.2 2 4 6 10 20 40 60 100

MRF174RF DEVICE DATA

fS11 S21 S12 S22

(MHz) |S11|φ|S21|φ|S12|φ|S22|φ

2.0 0.932 –133 74.0 112 0.011 23 0.835 –151

5.0 0.923 –160 31.6 98 0.011 12 0.886 –168

10 0.921 –170 16.0 93 0.011 10 0.896 –174

20 0.921 –175 8.00 88 0.011 12 0.899 –177

30 0.921 –177 5.32 86 0.011 16 0.900 –178

40 0.921 –177 3.98 83 0.012 21 0.901 –178

50 0.922 –178 3.17 81 0.012 26 0.902 –178

60 0.923 –178 2.63 79 0.012 30 0.903 –178

70 0.924 –178 2.24 77 0.013 34 0.904 –178

80 0.925 –178 1.95 75 0.013 39 0.906 –178

90 0.927 –178 1.72 73 0.014 43 0.907 –178

100 0.930 –178 1.50 71 0.016 45 0.910 –178

110 0.930 –178 1.31 70 0.018 46 0.912 –178

120 0.931 –178 1.19 68 0.019 47 0.914 –178

130 0.942 –178 1.10 67 0.019 49 0.919 –178

140 0.936 –178 1.01 66 0.021 50 0.921 –178

150 0.938 –178 0.936 65 0.021 53 0.922 –178

160 0.938 –178 0.879 64 0.022 53 0.923 –178

170 0.940 –178 0.830 63 0.023 54 0.923 –177

180 0.942 –178 0.780 61 0.024 56 0.924 –177

190 0.942 –178 0.737 60 0.026 59 0.928 –177

200 0.952 –178 0.705 59 0.027 58 0.929 –177

210 0.950 –178 0.668 57 0.029 61 0.934 –177

220 0.942 –178 0.626 56 0.030 61 0.933 –177

230 0.943 –178 0.592 56 0.032 62 0.939 –177

240 0.946 –177 0.566 55 0.033 64 0.941 –177

250 0.952 –177 0.545 54 0.035 64 0.943 –177

260 0.958 –177 0.523 53 0.036 65 0.946 –177

270 0.956 –177 0.500 52 0.038 67 0.943 –177

280 0.960 –177 0.481 52 0.039 68 0.946 –177

290 0.956 –178 0.460 51 0.042 68 0.944 –177

300 0.955 –178 0.443 50 0.043 68 0.947 –177

Table 1. Common Source Scattering Parameters

VDS = 28 V, ID = 3.0 A

MRF174

6 RF DEVICE DATA

Figure 13. S11, Input Reflection Coefficient

versus Frequency

VDS = 28 V, ID = 3.0 A

Figure 14. S12, Reverse Transmission Coefficient

versus Frequency

VDS = 28 V, ID = 3.0 A

Figure 15. S21, Forward Transmission Coefficient

versus Frequency

VDS = 28 V, ID = 3.0 A

Figure 16. S22, Output Reflection Coefficient

versus Frequency

VDS = 28 V, ID = 3.0 A

+j50

+j100

+j150

+j250

+j500

–j500

–j250

–j150

–j100

–j50

–j25

–j10

+j10

+j25

25 50 100 150 250 500

300

f = 30 MHz

+90°

+60°

+30°

0°

–30°

–60°

–90°

–120°

–150°

180°

+150°

+120°

.05 .04 .03 .02 .01

+90°

+60°

+30°

0°

–30°

–60°

–90°

–120°

–150°

180°

+150°

+120°

5 4 3 2 1

+j50

+j100

+j150

+j250

+j500

–j500

–j250

–j150

–j100

–j50

–j25

–j10

+j10

+j25

25 50 100 150 250 500

300

f = 30 MHz

250

200

150

100

f = 30 MHz

100

150

300 f = 30 MHz

300

MRF174RF DEVICE DATA

Figure 17. Series Equivalent Input/Output Impedance, Zin, ZOL*

100

150 f = 200 MHz

100

f = 200 MHz

Zo = 10 Ω

150

Zin ZOL*

ZOL* = Conjugate of the optimum load impedance

ZOL* = into which the device output operates at a

ZOL* = given output power, voltage and frequency.

Pout = 125 W, VDD = 28 V

IDQ = 100 mA

MHz Zin

Ohms ZOL*

Ohms

100

150

200

2.90 – j3.95

1.25 – j2.90

1.18 – j1.40

1.30 – j0.90

2.95 – j3.90

1.85 – j1.05

1.72 – j0.05

1.70 + j0.25

MRF174

8 RF DEVICE DATA

DESIGN CONSIDERATIONS

The MRF174 is a RF power N–Channel enhancement

mode field–effect transistor (FET) designed especially for

UHF power amplifier and oscillator applications. Motorola RF

MOSFETs feature a vertical structure with a planar design,

thus avoiding the processing difficulties associated with V–

groove vertical power FETs.

Motorola Application Note AN211A, FETs in Theory and

Practice, is suggested reading for those not familiar with the

construction and characteristics of FETs.

The major advantages of RF power FETs include high

gain, low noise, simple bias systems, relative immunity from

thermal runaway, and the ability to withstand severely mis-

matched loads without suffering damage. Power output can

be varied over a wide range with a low power dc control sig-

nal, thus facilitating manual gain control, ALC and modula-

tion.

DC BIAS

The MRF174 is an enhancement mode FET and, there-

fore, does not conduct when drain voltage is applied. Drain

current flows when a positive voltage is applied to the gate.

See Figure 9 for a typical plot of drain current versus gate

voltage. RF power FETs require forward bias for optimum

performance. The value of quiescent drain current (IDQ) is

not critical for many applications. The MRF174 was charac-

terized at IDQ = 100 mA, which is the suggested minimum

value of IDQ. For special applications such as linear amplifi-

cation, IDQ may have to be selected to optimize the critical

parameters.

The gate is a dc open circuit and draws no current. There-

fore, the gate bias circuit may generally be just a simple re-

sistive divider network. Some special applications may

require a more elaborate bias system.

GAIN CONTROL

Power output of the MRF174 may be controlled from its

rated value down to zero (negative gain) by varying the dc

gate voltage. This feature facilitates the design of manual

gain control, AGC/ALC and modulation systems. (See

Figure 8.)

AMPLIFIER DESIGN

Impedance matching networks similar to those used with

bipolar UHF transistors are suitable for MRF174. See

Motorola Application Note AN721, Impedance Matching Net-

works Applied to RF Power Transistors. The higher input

impedance of RF MOSFETs helps ease the task of broad-

band network design. Both small signal scattering parame-

ters and large signal impedances are provided. While the

s–parameters will not produce an exact design solution for

high power operation, they do yield a good first approxima-

tion. This is an additional advantage of RF MOS power FETs.

MRF174RF DEVICE DATA

PACKAGE DIMENSIONS

CASE 211–11

ISSUE N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

ESEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.960 0.990 24.39 25.14

B0.465 0.510 11.82 12.95

C0.229 0.275 5.82 6.98

D0.216 0.235 5.49 5.96

E0.084 0.110 2.14 2.79

H0.144 0.178 3.66 4.52

J0.003 0.007 0.08 0.17

K0.435 ––– 11.05 –––

M45 NOM 45 NOM

Q0.115 0.130 2.93 3.30

R0.246 0.255 6.25 6.47

U0.720 0.730 18.29 18.54

STYLE 2:

PIN 1. SOURCE

2. GATE

3. SOURCE

4. DRAIN

MRF174

10 RF DEVICE DATA

NOTES

MRF174RF DEVICE DATA

NOTES

MRF174

12 RF DEVICE DATA

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any othe r application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMF AX0@email.sps.mot.com – T OUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design–NET.com 5 1 Ti ng Ko k Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF174/D

*MRF174/D*

◊