BFG93A/X,215 - NXP Semiconductors / Philips Semiconductors

IMPORTANT NOTICE

Dear customer,

As from October 1st, 2006 Philips Semiconductors has a new trade name

- NXP Semiconductors, which will be used in future data sheets together with new contact

details.

In data sheets where the previous Philips references remain, please use the new links as

shown below.

http://www.philips.semiconductors.com use http://www.nxp.com

http://www.semiconductors.philips.com use http://www.nxp.com (Internet)

sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com

(email)

The copyright notice at the bottom of each page (or elsewhere in the document,

depending on the version)

is replaced with:

If you have any questions related to the data sheet, please contact our nearest sales

ofﬁce via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your

cooperation and understanding,

NXP Semiconductors

BFG93A; BFG93A/X

NPN 6 GHz wideband transistors

Rev. 05 — 26 November 2007 Product data sheet

NXP Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

FEATURES

•High power gain

•Low noise figure

•Gold metallization ensures

excellent reliability.

APPLICATIONS

Wideband applications in the UHF

and microwave range.

DESCRIPTION

NPN transistor in a 4-pin, dual-emitter

SOT143B plastic package.

PINNING

PIN DESCRIPTION

BFG93A

1 collector

2 base

3 emitter

4 emitter

BFG93A/X

1 collector

2 emitter

3 base

4 emitter

MARKING

TYPE NUMBER CODE

BFG93A R8%

BFG93A/X %MX

Fig.1 SOT143B.

handbook, 2 columns

Top view

MSB014

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter −−15 V

VCEO collector-emitter voltage open base −−12 V

ICcollector current (DC) −−35 mA

Ptot total power dissipation Ts≤85 °C−−300 mW

Cre feedback capacitance IC=i

c= 0; VCB = 5 V; f = 1 MHz −0.6 −pF

fTtransition frequency IC= 30 mA; VCE = 5 V; f = 500 MHz 4.5 6 −GHz

GUM maximum unilateral

power gain IC= 30 mA; VCE =8V; T

amb =25°C;

f = 1 GHz −16 −dB

IC= 30 mA; VCE =8V; T

amb =25°C;

f = 2 GHz −10 −dB

F noise ﬁgure Γs=Γopt; IC= 5 mA; VCE =8V;

amb =25°C; f = 1 GHz −1.7 −dB

Rev. 05 - 26 November 2007

2 of 13

NXP Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

Note

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −15 V

VCEO collector-emitter voltage open base −12 V

VEBO emitter-base voltage open collector −2V

Ccollector current (DC) −35 mA

Ptot total power dissipation Ts≤85 °C; note 1 −300 mW

Tstg storage temperature range −65 +150 °C

Tjjunction operating temperature −175 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point note 1 290 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector leakage current IE= 0; VCB =5V −−50 nA

hFE DC current gain IC= 30 mA; VCE = 5 V 40 90 −

Cccollector capacitance IE=i

e= 0; VCB =5V; f=1MHz −0.9 −pF

Ceemitter capacitance IC=i

c= 0; VEB =5V; f=1MHz −1.9 −pF

Cre feedback capacitance IC=i

c= 0; VCB =5V; f=1MHz −0.6 −pF

fTtransition frequency IC= 30 mA; VCE = 5 V; f = 500 MHz 4.5 6 −GHz

GUM maximum unilateral power

gain; note 1 IC= 30 mA; VCE =8V; T

amb =25°C;

f = 1 GHz −16 −dB

IC= 30 mA; VCE =8V; T

amb =25°C;

f = 2 GHz −10 −dB

F noise ﬁgure Γs=Γopt; IC= 5 mA; VCE =8V;

amb =25°C; f = 1 GHz −1.7 −dB

Γs=Γopt; IC= 5 mA; VCE =8V;

amb =25°C; f = 2 GHz −2.3 −dB

GUM 10 S21 2

11 2

–()1S

22 2

–()

-------------------------------------------------------------- dB.log=

Rev. 05 - 26 November 2007

3 of 13

NXP Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

Fig.2 Power derating curve.

handbook, halfpage

0 50 100 200

400

300

100

200

MBG245

150

Ptot

(mW)

Ts(oC)

Fig.3 DC current gain as a function of collector

current; typical values.

VCE =5V.

handbook, halfpage

0102030

120

MCD087

hFE

I (mA)

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

IC=i

c= 0; f = 1 MHz.

handbook, halfpage

048 16

1.0

MCD088

0.8

0.6

0.4

0.2

Cre

(pF)

V (V)

Fig.5 Transition frequency as a function of

collector current; typical values.

VCE = 5 V; Tamb =25°C; f = 500 MHz.

handbook, halfpage

01020 40

MCD089

30 I (mA)

(GHz)

Rev. 05 - 26 November 2007

4 of 13

NXP Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

Fig.6 Gain as a function of collector current;

typical values.

VCE = 8 V; f = 500 MHz.

handbook, halfpage

010 20 40

MCD090

gain

(dB)

I (mA)

MSG

GUM

Fig.7 Gain as a function of collector current;

typical values.

VCE = 8 V; f = 1 GHz.

handbook, halfpage

010 20 40

MCD091

gain

(dB)

I (mA)

MSG

GUM

Fig.8 Gain as a function of frequency; typical

values.

VCE = 8 V; IC= 10 mA.

handbook, halfpage

010

MCD092

102103104

gain

(dB)

(MHz)

MSG

GUM

Gmax

Fig.9 Gain as a function of frequency; typical

values.

VCE = 8 V; IC=30mA.

handbook, halfpage

010

MCD093

102103104

gain

(dB)

f (MHz)

GUM

MSG

Gmax

Rev. 05 - 26 November 2007

5 of 13

NXP Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

Fig.10 Minimum noise figure as a function of

collector current; typical values.

VCE =8V.

handbook, halfpage

MCD094

101

(dB)

I (mA)

f = 2 GHz

500 MHz

1 GHz

102

Fig.11 Minimum noise figure as a function of

frequency; typical values.

VCE =8V.

handbook, halfpage

MCD095

(dB)

f (MHz)

5 mA

10 mA

104

103

102

I = 30 mA

Fig.12 Common emitter noise figure circles; typical values.

handbook, full pagewidth

0.5

∞

0.2

0.5

MCD096

stability

circle

unstable

region

+ j

– j 22.2 dB

MSG

0.2

125100.5

0.2

OPT

F = 1.4 dB

min

2 dB

4 dB

3 dB

Zo=50Ω.

Maximum stable gain = 22.2 dB.

Rev. 05 - 26 November 2007

6 of 13

NXP Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

Zo=50Ω.

Maximum stable gain = 10.4 dB.

Fig.13 Common emitter noise figure circles; typical values.

handbook, full pagewidth

0.5

∞

0.2

0.5

+ j

– j

MCD097

unstable

region

stability

circle

0.2

12510

0.2 0.5

F = 2 dB

min

OPT

6 dB

4 dB

2.5 dB

10.4 dB

MSG

Zo=50Ω.

Fig.14 Common emitter noise figure circles; typical values.

handbook, full pagewidth

0.5

∞

0.2

0.5

MCD098

+ j

– j

0.2

OPT

12510

0.2 0.5

F = 3 dB

min

5 dB

4 dB

3.5 dB

G = 9 dB

max 8 dB

7 dB

Rev. 05 - 26 November 2007

7 of 13

NXP Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

VCE = 8 V; IC= 30 mA; Zo=50Ω.

Fig.15 Common emitter input reflection coefficient (S11).

handbook, full pagewidth

0.2

0.5

∞

0.2

0.5

+ j

– j

MCD099

0.5 10.2 1052

40 MHz

3 GHz

Fig.16 Common emitter forward transmission coefficient (S21).

handbook, full pagewidth

135

180 o

135o

90o

45o

_45o

_90o

MCD100

1020304050

40 MHz

3 GHz

VCE = 8 V; IC= 30 mA; Rmax =50Ω.

Rev. 05 - 26 November 2007

8 of 13

NXP Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

Fig.17 Common emitter reverse transmission coefficient (S12).

handbook, full pagewidth

135

180 o

135o

90o

45o

_45o

_90o

MCD102

40 MHz

3 GHz

0.200.160.120.080.04

VCE = 8 V; IC= 30 mA; Rmax = 0.2 Ω.

VCE = 10 V; IC= 15 mA; Zo=50Ω.

Fig.18 Common emitter output reflection coefficient (S22).

handbook, full pagewidth

0.2

0.5

∞

0.2

0.5

+ j

– j

MCD101

0.5 10.2 1052

3 GHz 40 MHz

Rev. 05 - 26 November 2007

9 of 13

NXP Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

SPICE parameters for BFR91A(/X) die

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 1.328 fA

2 BF 102.0 −

3 NF 1.000 −

4 VAF 51.90 V

5 IKF 8.155 A

6 ISE 13.90 fA

7 NE 15.12 −

8 BR 17.69 −

9 NR 994.0 m

10 VAR 3.280 V

11 IKR 10.00 A

12 ISC 1.043 aA

13 NC 1.189 −

14 RB 10.00 Ω

15 IRB 1.000 µA

16 RBM 10.00 Ω

17 RE 763.6 mΩ

18 RC 9.000 Ω

19 (note 1) XTB 0.000 −

20 (note 1) EG 1.110 EV

21 (note 1) XTI 3.000 −

22 CJE 2.032 pF

23 VJE 600.0 mV

24 MJE 290.0 m

25 TF 6.557 ps

26 XTF 38.97 −

27 VTF 10.93 V

28 ITF 521.0 mA

29 PTF 0.000 deg

30 CJC 1.003 pF

31 VJC 340.8 mV

32 MJC 194.2 m

33 XCJC 120.0 m

34 TR 3.073 ns

35 (note 1) CJS 0.000 F

Note

1. These parameters have not been extracted,

the default values are shown.

List of components (see Fig.19)

36 (note 1) VJS 750.0 mV

37 (note 1) MJS 0.000 −

38 FC 800.0 m

DESIGNATION VALUE UNIT

Cbe 84 fF

Ccb 17 fF

Cce 191 fF

L1 0.12 nH

L2 0.21 nH

L3 0.06 nH

LB0.95 nH

LE0.40 nH

SEQUENCE No. PARAMETER VALUE UNIT

Fig.19 Package equivalent circuit SOT143B.

QLB= 50; QLE= 50.

QLB,E (f) = QLB,E √ (f/fc).

fc= scaling frequency = 1000 MHz.

handbook, halfpage

MBC964

CB' C'

L1 L2

Ccb

Cbe ce

Rev. 05 - 26 November 2007

10 of 13

NXP Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

PACKAGE OUTLINE

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 1.1

0.9

max

0.1

0.88

0.78

0.15

0.09

3.0

2.8

1.4

1.2

HEywvQ

2.5

2.1 0.45

0.15 0.55

0.45

1.9

1.7

0.1 0.10.2

0.48

0.38

DIMENSIONS (mm are the original dimensions)

SOT143B 97-02-28

0 1 2 mm

scale

Plastic surface mounted package; 4 leads SOT143B

vMA

detail X

Rev. 05 - 26 November 2007

11 of 13

NXP Semiconductors BFG93A; BFG93A/X

NPN 6 GHz wideband transistors

Legal information

Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

Rev. 05 - 26 November 2007

12 of 13

NXP Semiconductors BFG93A; BFG93A/X

NPN 6 GHz wideband transistors

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 26 November 2007

Document identifier: BFG93A_X_N_5

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFG93A_X_N_5 20071126 Product data sheet - BFG93A_X_4

Modiﬁcations: •Marking table on page 2; changed code

BFG93A_X_4

(9397 750 04351) 19980923 Product speciﬁcation - BFG93SERIES_3

BFG93SERIES_3 19950925 Product speciﬁcation - BFG93SERIES_2

BFG93SERIES_2 - Product speciﬁcation - BFG93_SERIES_1

BFG93_SERIES_1 - - - -