BFG93A; BFG93A/X NPN 6 GHz wideband transistors Rev. 05 -- 26 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 6 GHz wideband transistors FEATURES BFG93A; BFG93A/X PINNING * High power gain PIN * Low noise figure * Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range. DESCRIPTION NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. DESCRIPTION handbook, 2 columns 4 3 BFG93A 1 collector 2 base 3 emitter 4 emitter 1 2 Top view BFG93A/X MSB014 Fig.1 SOT143B. 1 collector 2 emitter 3 base 4 emitter MARKING TYPE NUMBER CODE BFG93A R8% BFG93A/X %MX QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 15 V VCEO collector-emitter voltage open base - - 12 V IC collector current (DC) - - 35 mA Ptot total power dissipation Ts 85 C - - 300 mW Cre feedback capacitance IC = ic = 0; VCB = 5 V; f = 1 MHz - 0.6 - pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4.5 6 - GHz GUM maximum unilateral power gain IC = 30 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz - 16 - dB IC = 30 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz - 10 - dB s = opt; IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz - 1.7 - dB F noise figure Rev. 05 - 26 November 2007 2 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 15 V VCEO collector-emitter voltage open base - 12 V VEBO emitter-base voltage open collector - 2 V IC collector current (DC) - 35 mA Ptot total power dissipation Ts 85 C; note 1 - 300 mW Tstg storage temperature range -65 +150 C Tj junction operating temperature - 175 C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point note 1 VALUE UNIT 290 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current IE = 0; VCB = 5 V - - 50 hFE DC current gain IC = 30 mA; VCE = 5 V 40 90 - Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz - 0.9 - pF nA Ce emitter capacitance IC = ic = 0; VEB = 5 V; f = 1 MHz - 1.9 - pF Cre feedback capacitance IC = ic = 0; VCB = 5 V; f = 1 MHz - 0.6 - pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4.5 6 - GHz GUM maximum unilateral power gain; note 1 IC = 30 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz - 16 - dB IC = 30 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz - 10 - dB s = opt; IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz - 1.7 - dB s = opt; IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz - 2.3 - dB F noise figure Note S 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 - S 11 2 ) ( 1 - S 22 2 ) Rev. 05 - 26 November 2007 3 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors MBG245 400 handbook, halfpage BFG93A; BFG93A/X MCD087 120 handbook, halfpage P tot (mW) h FE 300 80 200 40 100 0 0 0 50 100 150 0 200 10 20 Ts ( o C) 30 IC (mA) VCE = 5 V. Fig.3 Fig.2 Power derating curve. MCD088 1.0 handbook, halfpage DC current gain as a function of collector current; typical values. MCD089 8 handbook, halfpage C re fT (GHz) (pF) 0.8 6 0.6 4 0.4 2 0.2 0 0 0 4 8 12 16 0 10 20 40 VCE = 5 V; Tamb = 25 C; f = 500 MHz. IC = ic = 0; f = 1 MHz. Fig.4 30 I C (mA) VCB (V) Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Rev. 05 - 26 November 2007 Transition frequency as a function of collector current; typical values. 4 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X MCD090 30 MCD091 30 handbook, halfpage handbook, halfpage gain gain MSG (dB) (dB) G UM 20 MSG 20 G UM 10 10 0 0 10 20 30 0 40 0 10 20 30 I C (mA) VCE = 8 V; f = 500 MHz. VCE = 8 V; f = 1 GHz. Fig.6 Fig.7 Gain as a function of collector current; typical values. MCD092 50 40 I C (mA) Gain as a function of collector current; typical values. MCD093 50 handbook, halfpage handbook, halfpage gain gain (dB) (dB) G UM 40 40 G UM MSG 30 30 MSG 20 20 G max G max 10 0 10 10 2 10 3 f (MHz) 10 10 4 0 10 10 VCE = 8 V; IC = 10 mA. VCE = 8 V; IC = 30 mA. Fig.8 Fig.9 Gain as a function of frequency; typical values. Rev. 05 - 26 November 2007 2 10 3 f (MHz) 10 4 Gain as a function of frequency; typical values. 5 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X MCD094 4 MCD095 4 handbook, halfpage handbook, halfpage F (dB) F (dB) f = 2 GHz 3 3 1 GHz 500 MHz 2 2 1 1 0 1 10 10 mA 5 mA 0 10 2 10 2 I C (mA) I C = 30 mA 10 3 f (MHz) 10 4 VCE = 8 V. VCE = 8 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. stability circle 1 handbook, full pagewidth 0.5 un re sta gio ble n 2 0.2 5 OPT -j 10 * +j F min = 1.4 dB MSG 0.2 22.2 dB 0.5 1 2 5 10 10 2 dB 5 0.2 3 dB 4 dB 2 0.5 Zo = 50 . Maximum stable gain = 22.2 dB. 1 MCD096 Fig.12 Common emitter noise figure circles; typical values. Rev. 05 - 26 November 2007 6 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X 1 handbook, full pagewidth 0.5 2 stability circle 0.2 5 unstable region OPT * 10 F min = 2 dB +j 0 MSG 0.2 10.4 dB -j 1 0.5 2 5 10 2.5 dB 10 5 0.2 4 dB 6 dB 2 0.5 MCD097 1 Zo = 50 . Maximum stable gain = 10.4 dB. Fig.13 Common emitter noise figure circles; typical values. 1 handbook, full pagewidth 0.5 2 5 dB 0.2 5 4 dB 3.5 dB 10 +j OPT 0.2 -j 0.2 * 0.5 F min = 3 dB 1 2 5 10 10 * G max = 9 dB 5 8 dB 7 dB 2 0.5 1 MCD098 Zo = 50 . Fig.14 Common emitter noise figure circles; typical values. Rev. 05 - 26 November 2007 7 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X 1 handbook, full pagewidth 0.5 2 3 GHz 0.2 5 10 +j 0.2 0 0.5 1 2 5 10 -j 10 40 MHz 5 0.2 2 0.5 1 MCD099 VCE = 8 V; IC = 30 mA; Zo = 50 . Fig.15 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 45 o 135 o 40 MHz 180 o 50 40 20 10 0o 3 GHz _ VCE = 8 V; IC = 30 mA; Rmax = 50 . 30 _ 45 o 135 o _ 90 o MCD100 Fig.16 Common emitter forward transmission coefficient (S21). Rev. 05 - 26 November 2007 8 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X 90 o handbook, full pagewidth 135 o 45 o 3 GHz 40 MHz 180 o 0.04 0.08 0.12 0.16 0.20 0o _ 45 o _ 135 o _ 90 o VCE = 8 V; IC = 30 mA; Rmax = 0.2 . MCD102 Fig.17 Common emitter reverse transmission coefficient (S12). 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5 10 -j 10 40 MHz 3 GHz 5 0.2 2 0.5 1 MCD101 VCE = 10 V; IC = 15 mA; Zo = 50 . Fig.18 Common emitter output reflection coefficient (S22). Rev. 05 - 26 November 2007 9 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X SPICE parameters for BFR91A(/X) die SEQUENCE No. PARAMETER VALUE UNIT SEQUENCE No. PARAMETER VALUE UNIT 1 IS 1.328 fA 36 (note 1) VJS 750.0 mV 2 BF 102.0 - 37 (note 1) MJS 0.000 - 3 NF 1.000 - 38 FC 800.0 m 4 VAF 51.90 V Note 5 IKF 8.155 A 6 ISE 13.90 fA 1. These parameters have not been extracted, the default values are shown. 7 NE 15.12 - 8 BR 17.69 - 9 NR 994.0 m 10 VAR 3.280 V 11 IKR 10.00 A 12 ISC 1.043 aA 13 NC 1.189 - 14 RB 10.00 15 IRB 1.000 A 16 RBM 10.00 17 RE 763.6 m 18 RC 9.000 19 (note 1) XTB 0.000 - 20 (note 1) EG 1.110 EV 21 (note 1) XTI 3.000 - 22 CJE 2.032 pF 23 VJE 600.0 mV 24 MJE 290.0 m 25 TF 6.557 ps 26 XTF 38.97 - 27 VTF 10.93 V 28 ITF 521.0 mA Cbe 84 fF 29 PTF 0.000 deg Ccb 17 fF 30 CJC 1.003 pF Cce 191 fF 31 VJC 340.8 mV L1 0.12 nH 32 MJC 194.2 m L2 0.21 nH 33 XCJC 120.0 m L3 0.06 nH 34 TR 3.073 ns LB 0.95 nH 35 (note 1) CJS 0.000 F LE 0.40 nH C cb handbook, halfpage L1 LB B L2 B' C' C E' C be Cce LE MBC964 L3 E QLB = 50; QLE = 50. QLB,E (f) = QLB,E (f/fc). fc = scaling frequency = 1000 MHz. Fig.19 Package equivalent circuit SOT143B. List of components (see Fig.19) DESIGNATION Rev. 05 - 26 November 2007 VALUE UNIT 10 of 13 NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 SOT143B Rev. 05 - 26 November 2007 11 of 13 BFG93A; BFG93A/X NXP Semiconductors NPN 6 GHz wideband transistors Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 05 - 26 November 2007 12 of 13 BFG93A; BFG93A/X NXP Semiconductors NPN 6 GHz wideband transistors Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFG93A_X_N_5 20071126 Product data sheet - BFG93A_X_4 * Modifications: Marking table on page 2; changed code BFG93A_X_4 (9397 750 04351) 19980923 Product specification - BFG93SERIES_3 BFG93SERIES_3 19950925 Product specification - BFG93SERIES_2 BFG93SERIES_2 - Product specification - BFG93_SERIES_1 BFG93_SERIES_1 - - - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 November 2007 Document identifier: BFG93A_X_N_5