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P0130AA
SENSITIVE 0.8A SCRs
May 2002 - Ed: 2
MAIN FEATURES:
DESCRIPTION
The P0130AA is a gate sensitive SCR, packaged
in TO-92, used in conjunction of a TN22 A.S.D
and of a resistor in electronic starter for fluores-
cent tubelamps.
Symbol Value Unit
IT(RMS) 0.8 A
VDRM/VRRM 100 V
IGT 1µA
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (180°conduction angle) Tl = 55°C 0.8 A
IT(AV) Averageon-state current (180°conduction angle) Tl = 55°C 0.5 A
ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C8A
tp = 10 ms 7
I
tI
t Valuefor fusing tp = 10ms Tj = 25°C 0.24 A2S
dI/dt Critical rate of rise of on-state current
IG=2xI
GT ,tr≤100 ns F = 60 Hz Tj = 125°C50A/µs
I
GM Peak gate current tp = 20 µs Tj = 125°C1 A
P
G(AV) Average gate power dissipation Tj = 125°C 0.1 W
Tstg
Tj Storage junction temperature range
Operating junction temperature range -40to+150
-40to+125 °C
A
K
G
TO-92
P0130AA
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ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
THERMAL RESISTANCES
PRODUCT SELECTOR
Symbol Test Conditions P0130AA Unit
IGT VD=12V R
L= 140 ΩMIN. 0.1 µA
MAX. 1
VGT MAX. 0.8 V
VGD VD=V
DRM RL= 3.3 kΩRGK =1kΩTj = 125°C MIN. 0.1 V
VRG IRG =10µAMIN. 8V
I
H
I
T
=50mA R
GK =1kΩMAX. 5 mA
ILIG= 1 mA RGK =1kΩMAX. 6mA
dV/dt VD=67%V
DRM RGK =1kΩTj = 125°C MIN. 25 V/µs
VTM ITM = 1.6 A tp = 380 µsTj = 25°C MAX. 1.95 V
Vt0 Threshold voltage Tj = 125°C MAX. 0.95 V
RdDynamic resistance Tj = 125°C MAX. 600 mΩ
IDRM
IRRM
VDRM =V
RRM RGK =1kΩTj = 25°C MAX. 1 µA
Tj = 125°C MAX. 100
Symbol Parameter Value Unit
Rth(j-i) Junction to case (DC) 80 °C/W
Rth(j-a) Junction to ambient (DC) 150 °C/W
Part Number Voltage Sensitivity Package
P0130AA 100V 1 µA TO-92
P0130AA
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ORDERING INFORMATION
OTHER INFORMATION
Note: xx = sensitivity, y = voltage
Part Number Marking Weight Base Quantity Packing mode
P0130AA 1EA3 P0130AA 0.2 g 2500 Bulk
P0130AA 2AL3 P0130AA 0.2 g 2000 Ammopack
Fig. 1: Maximum average power dissipation
versus average on-state current. Fig. 2-1: Average and D.C. on-state current
versus lead temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature. Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
P 01 30 A A 1EA3
SENSITIVE
SCR
SERIES
CURRENT: 0.8A
SENSITIVITY:
30: 1µA
VOLTAGE:
A: 100V PACKAGE:
A:TO-92
PACKINGMODE:
1EA3:TO-92 bulk
2AL3:TO-92 ammopack
Blank
P(W)
0.0 0.1 0.2 0.3 0.4 0.5 0.6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 IT(av)(A)
Tlead orTtab (°C)
1.1
1.0
0.9
0.7
0.8
0.5
0.6
0.1
0.4
0.3
0.2
0.0 0 25 50 75 100 125
IT(av)(A)
1.2
1.1
1.0
0.8
0.9
0.6
0.7
0.2
0.5
0.4
0.3
0.1
0 25 50 75 100 125
0.0 Tamb(°C)
K = [Zth(j-a)/Rth(j-a)]
tp(s)
1.00
0.10
0.01
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
P0130AA
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Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5:Relative variation of holding current versus
gate-cathode resistance (typical values).
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values). Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
Fig. 8: Surge peak on-state current versus
number of cycles. Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I t.
IGT,IH, IL[Tj] / IGT, IH, IL[T] = 25°C
6
5
4
3
2
1
00-20-40 20 40 60 80 100 120 140
Tj(°C)
IH[Rgk]/IH[Rgk=1k ]Ω
Rgk(kΩ)
0.4 0.6 0.8 1.00.2 1.6 1.8 2.01.2 1.4
dV/dt[Rgk] / dV/dt[Rgk=1k ]Ω
Rgk(kΩ)
0
0.1
1.0
10.0 dV/dt[Cgk] / dV/dt[Rgk=1k ]Ω
21034
5
67
0
2
4
6
8
10
Cgk(nF)
1 10 100 1000
0
1
2
3
4
5
6
7
8ITSM(A)
Non repetitive
Tj initial=25°C
Tamb=25°C
Repetitive
Numberofcycles
Onecycle
tp=10ms
ITSM(A), I t(A s)
22
100.0
10.0
1.0
0.1
0.01 0.10 1.00 10.00
tp(ms)
P0130AA
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Fig. 10: On-state characteristics (maximum
values).
Ω
ITM(A)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
1E+1
1E+0
1E-1
1E-2 VTM(V)
PACKAGE MECHANICAL DATA
TO-92 (Plastic)
D
F
a
E
B
A
C
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.35 0.053
B 4.70 0.185
C 2.54 0.100
D 4.40 0.173
E 12.70 0.500
F 3.70 0.146
a 0.50 0.019
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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