APT40DS10HJ ISOTOP(R)Schottky Diode Full Bridge Power Module VRRM = 100V IF = 40A @ Tc = 80C Application Switch mode power supplies rectifier Induction heating Welding equipment Features + ~ ~ Ultra fast recovery times Soft recovery characteristics High current Very low stray inductance High level of integration ISOTOP(R) Package (SOT-227) Benefits - Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Symbol VR VRRM IFAV IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Rectangular, d=0.5 Non-Repetitive Forward Surge Current t=10ms TC = 80C TJ = 45C Max ratings Unit 100 V 40 450 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APT40DS10HJ - Rev 1 October, 2012 Absolute maximum ratings APT40DS10HJ All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions IR Reverse Current VR = 100V VF Forward Voltage IF = 40A Min Tj = 25C Tj = 125C Tj = 25C Tj = 125C Typ Max 1 10 0.88 0.7 Unit mA V Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 -55 Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight Typ Max 1.1 20 Unit C/W V 150 300 1.5 29.2 C N.m g SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 1.95 (.077) 2.14 (.084) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Dimensions in Millimeters and (Inches) www.microsemi.com 2-4 APT40DS10HJ - Rev 1 October, 2012 38.0 (1.496) 38.2 (1.504) APT40DS10HJ Typical Performance Curve Forward Characteristic 80 60 IF (A) TJ=125C 40 TJ=25C 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VF (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 1.2 1 0.8 0.9 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 3-4 APT40DS10HJ - Rev 1 October, 2012 ISOTOP(R) is a registered trademark of ST Microelectronics NV APT40DS10HJ DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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