2. 30¡ À0. 05
1. 25¡ À0. 05
1.30¡À
0.03
0.30
2.00¡À
0.05
1.01 R
EF
SOT-323 Plastic-Encapsulated Transistors
MMST5401 TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM: 0.2 W (Tamb=25℃)
Collector current
I
CM: -0.2 A
Collector-base voltage
V
(BR)CBO: -160 V
Operating and storage junction temperature range
T
J, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base br eakdown vol tage V(BR)CBO Ic=-100µA, IE=0 -160 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -150 V
E mitter-b ase break dow n volt age V(BR)EBO IE=-10µA, IC=0 -5 V
Collector cut-off current ICBO VCB=-120V, IE=0
-50 nA
E mitte r cut-off current IEBO VEB=-3V, IC=0
-50 nA
hFE(1) VCE=-5V, I C=-1mA 50
hFE(2) VCE=-5V, IC=-10mA 60 240
DC current gain
hFE(3) VCE=-5V, IC=-50mA 50
VCE(sat) IC=-10mA, IB=-1mA
-0.2 V
Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA
-0.5 V
VBE(sat) IC=-10mA, IB=-1mA
-1 V
Base-emitter volt age VBE(sat) IC=-50mA, IB=-5mA
-1 V
Transit ion frequency fT V
CE=-10V, IC=-10mA, f=100MHz 100 300 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 6 pF
Noise figure NF VCE=-5V, Ic=-0.2mA,
f=1KHZ, Rg=10Ω 8 dB
Marking K4M
Unit: mm
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
Transys
Electronics
LI
M
ITE
D
