2MBI100N-060 IGBT Module 600V / 100A 2 in one-package Features * High speed switching * Voltage drive * Low inductance module structure Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms Continuous 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *1 Terminals *1 C2E1 G1 Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Dis - - 4.5 - - - - - - - - - - - - - - 6600 1470 670 0.6 0.2 0.6 0.2 - - E1 G2 Current control circuit . t c u d e u n i t n o c Characteristics Min. Typ. Electrical characteristics (at Tj=25C unless otherwise specified) Symbol E2 C1 *1 : Recommendable value : 2.5 to 3.5 N*m(M5) Item Equivalent Circuit Schematic Unit V V A A A A W C C V N*m N*m Rating 600 20 100 200 100 200 400 +150 -40 to +125 AC 2500 (1min.) 3.5 3.5 d o r p Conditions Unit Max. 1.0 15 7.5 2.8 - - - 1.2 0.6 1.0 0.35 3.0 0.3 VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=100mA VGE=15V, IC=100A VGE=0V VCE=10V f=1MHz VCC=300V IC=100A VGE=15V RG=24 ohm IF=100A, VGE=0V IF=100A mA A V V pF Conditions Unit IGBT Diode the base to cooling fin C/W C/W C/W s V s Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. - - - - - 0.05 Max. 0.31 0.7 - *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ E2 IGBT Module 2MBI100N-060 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=125C 200 200 150 150 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25C 100 50 50 0 0 0 1 2 3 4 5 0 3 4 5 Collector-Emitter vs. Gate-Emitter voltage Tj=25C Collector-Emitter vs. Gate-Emitter voltage Tj=125C VCE [V] 10 8 6 4 2 0 0 5 10 15 Di 8 . t c u 6 4 d e u n i t n o c s 20 Gate-Emitter voltage : VGE [V] 2 d o r p 0 25 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=24 ohm, VGE=15V, Tj=25C Switching time vs. Collector current Vcc=300V, RG=24 ohm, VGE=15V, Tj=125C 1000 Switching time : ton, tr, toff, tf [n sec.] 1000 Switching time : ton, tr, toff, tf [n sec.] 2 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 1 Collector-Emitter voltage : VCE [V] 10 Collector-Emitter voltage : 100 100 100 10 10 0 25 50 75 100 125 150 Collector current : Ic [A] http://store.iiic.cc/ 0 25 50 75 100 Collector current : Ic [A] 125 150 IGBT Module 2MBI100N-060 Dynamic input characteristics Tj=25C 500 25 400 20 300 15 200 10 100 5 100 00 0 10 10 30 50 100 0 100 200 300 400 500 600 Gate charge : Qg [nC] Gate resistance : RG [ohm] Reverse recovery characteristics trr, Irr, vs. IF Forward current vs. Forward voltage VGE=0V 250 Collector current : -Ic [A] (Forward current : IF [A] ) Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 200 150 100 50 0 0 1 2 100 Di 3 Emitter-Collector voltage VECD [V] (Forward voltage : VF [V]) d 10 0 4 25 50 75 100 125 150 Forward current : IF [A] Reversed biased safe operating area < 15V, Tj < +VGE=15V, -VGE = = 125C, RG > = 24 ohm Switching loss vs. Collector current Vcc=300V, RG=24 ohm, VGE=15V 10 1000 8 800 Collector current : Ic [A] Switching loss : Eon, Eoff, Err [mJ/cycle] d o r p e u n i t n o c s . t c u 50 6 4 600 400 200 2 0 0 0 25 50 75 100 Collector current : Ic [A] 125 150 0 http://store.iiic.cc/ 100 200 300 400 500 Collector-Emitter voltage : VCE [V] 600 Gate-Emitter voltage : VGE [V] 1000 Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] Switching time vs. RG Vcc=300V, Ic=100A, VGE=15V, Tj=25C IGBT Module 2MBI100N-060 Capacitance vs. Collector-Emitter voltage Tj=25C Transient thermal resistance 1 Capacitance : Cies, Coes, Cres [nF] Thermal resistance : R th (j-c) [C/W] 10 0.1 0.1 0.01 0.001 1 0.01 0.1 0 1 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Pulse width : PW [sec.] Outline Drawings, mm Di d e u n i t n o c s . t c u d o r p mass : 180g http://store.iiic.cc/ 30 35