ECG055BTRG - TriQuint Semiconductor

Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 1 of 4 February 2009

ECG055B

InGaP HBT Gain Block

Product Features

• DC – 6 GHz

• +18 dBm P1dB at 1 GHz

• +34 dBm OIP3 at 1 GHz

• 20.5 dB Gain at 1 GHz

• 3.4 dB Noise Fi gure

• Available in Lead-free / SOT-89

Package Style

• Internally matched to 50 Ω

Applications

• Mobile Infrastru cture

• CATV / FTTX

• W-LAN / ISM

• RFID

• WiMAX / WiBro

Product Description

The ECG055B is a general-purpose buffer amplifier that

offers high dynamic range in a low-cost surface-mount

package. At 1000 MHz, the ECG055B typically provides

20.5 dB of gain, +34 dBm Output IP3, and +18 dBm P1dB.

The ECG055B consists of Darlington pair amplifiers using

the high reliability InGaP/GaAs HBT process technology

and only requires DC-blocking capacitors, a bias resistor,

and an inductive RF choke for operation. The device is

ideal for wireless applications and is available in low-cost,

surface-mountable plastic lead-free/RoHS-compliant SOT-

89 packages. A SOT-86 version is also available as the

ECG055C. All devices are 100% RF and DC tested.

The broadband MMIC amplifier can be directly applied to

various current and next generation wireless technologies

such as GPRS, GSM, CDMA, and W-CDMA. In addition,

the ECG055B will work for other various applications

within the DC to 6 GHz frequency range such as CATV

and mobile wireless.

Functional Diagram

RF IN GND RF OUT

GND

1 23

Function Pin No.

Input 1

Output/Bias 3

Ground 2, 4

Specifications (1)

Parameter Units Min Typ Max

Operational Bandwidth MHz DC 6000

Test Frequency MHz 1000

Gain dB 20.5

Output P1dB dBm +18

Output IP3 (2) dBm +34

Test Frequency MHz 2000

Gain dB 19.3 20.1 21

Input Return Loss dB 20

Output Return Loss dB 12.5

Output P1dB dBm +18

Output IP3 (2) dBm +30 +32

Noise Figure dB 3.4 4

Device Voltage V 4.2 4.8 5.3

Device Current mA 65

1. Test conditions unless otherwise noted: 25 ºC, Supply Voltage = +6 V, Rbias = 18 Ω, 50 Ω Sy stem.

2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The

suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

Absolute Maximum Rating

Parameter Rating

Storage Temperature -65 to +150 °C

RF Input Power (continuous) +12 dBm

Device Current 150 mA

Junction Temperature +160 °C

Thermal Resistance, Rth 128 °C/W

Operation of this device above any of these parameters may cause permanent damage.

Typical Performance (1)

Parameter Units Typical

Frequency MHz 500 900 1900 2140

S21 dB 20.6 20.5 20.1 20.1

S11 dB -31 -26.3 -19.7 -18.5

S22 dB -23 -19.1 -12.9 -12.2

Output P1dB dBm +18 +18.1 +18.2 +17.8

Output IP3 dBm +34 +34 +32 +30.5

Noise Figure dB 3.6 3.4 3.4 3.4

Ordering Information

Part No. Description

ECG055B-G InGaP HBT Gain Block

(lead-free/RoHS-compliant SOT-89 package)

ECG055B-PCB 700 –2400 MHz Fully Assembled Eval. Board

Standard T/R size = 1000 pieces on a 7” reel.

Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 2 of 4 February 2009

ECG055B

InGaP HBT Gain Block

Typical Device RF Performance

Supply Bias = +6 V, Rbias = 18 Ω, Icc = 65 mA

Frequency MHz 100 500 900 1900 2140 2400 3500 5800

S21 dB 20.7 20.6 20.5 20.1 20.1 19.9 19.3 17.2

S11 dB -36 -31 -26.3 -19.7 -18.5 -17.5 -14 -8.9

S22 dB -27 -23 -19.1 -12.9 -12.2 -11 -8.1 -4.1

Output P1dB dBm +18.2 +18 +18.1 +18.2 +17.8 +17.8 +17.2

Output IP3 dBm +33 +33.5 +34.5 +33.5 +32.9 +32

Noise Figure dB 3.4 3.6 3.4 3.4 3.4 3.8

1. Test conditions: T = 25 ºC, Supply Voltage = +6 V, Device Voltage = 4.8 V, Rbias = 18 Ω, Icc = 65 mA typical, 50 Ω System.

2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.

Gain

0 1000 2000 3000 4000 5000 6000

Frequency (M Hz)

S21 (dB)

Return Loss

-25

-20

-15

-10

-5

0 1000 2000 3000 4000 5000 6000

Frequency (M Hz)

S11 & S22 (dB)

S11 S22

Icc vs. Vd e

120

160

4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0

Vde (V)

Icc (mA)

25°C

OIP3 vs. Frequency

1234

Frequency (M Hz)

OIP3

(

dBm

)

25°C -40°C 85°C

Noise Figure

2.0

2.5

3.0

3.5

4.0

4.5

5.0

800 1000 1200 1400 1600 1800 2000

Frequency (M Hz)

NF (dB)

P1dB vs. Frequency

1234

Frequency (MH z)

P1dB

(

dBm

)

25°C -40°C 85°C

Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 3 of 4 February 2009

ECG055B

InGaP HBT Gain Block

Recommended Application Circuit

Recommended Component Values

Reference Frequency (MHz)

Designator 50 500 900 1900 2200 2500 3500

L1 820 nH 220 nH 68 nH 27 nH 22 nH 18 nH 15 nH

C1, C2, C4 .018 µF 1000 pF 100 pF 68 pF 68 pF 56 pF 39 pF

1. The proper values for the components are dependent upon the inte nded frequency of operation.

2. The follow ing values are contained on the evaluation board to achieve optimal broadband performance:

Ref. Desig. Value / Type Size

L1 39 nH wirewound inductor 0603

C1, C2 56 pF chip capacitor 0603

C3 0.018 μF chip capacitor 0603

C4 Do Not Place

R4 18 Ω 1% tolerance 0805

Recommended Bias Resistor Values

Supply

Voltage R1 value Size

6 V 18.5 ohms 0805

7 V 33.8 ohms 1210

8 V 49 ohms 1210

9 V 65 ohms 2010

10 V 80 ohms 2010

12 V 111 ohms 2512

The proper value for R1 is dependent upon the supply

voltage and allows for bias stability over temperature.

WJ recommends a minimum supply bias of +6 V. A

1% tolerance resistor is recommended.

Typical Device S-Parameters

S-Parameters (Vdevice = +4.8 V, ICC = 65 mA, T = 25°C, calibrated to device leads)

Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)

50 -35.44 -155.39 20.70 178.22 -22.72 0.33 -27.17 -13.13

500 -31.06 -130.40 20.64 160.99 -22.79 -4.72 -23.11 -72.28

1000 -25.99 -134.19 20.51 142.21 -22.57 -10.86 -18.21 -103.46

1500 -21.96 -143.12 20.33 123.40 -22.41 -17.52 -14.71 -126.14

2000 -19.74 -147.93 20.14 104.91 -22.25 -24.67 -12.69 -147.96

2500 -17.50 -165.99 19.92 86.66 -21.53 -31.23 -10.92 -167.56

3000 -15.68 177.82 19.65 68.34 -21.19 -38.23 -9.29 174.99

3500 -14.02 162.84 19.32 49.37 -20.96 -46.84 -8.13 153.30

4000 -12.75 145.85 18.96 30.89 -20.43 -55.87 -7.17 137.75

4500 -11.62 126.85 18.62 11.81 -20.02 -64.61 -5.98 117.77

5000 -10.22 104.39 17.97 -7.65 -19.54 -74.66 -5.08 96.84

5500 -9.77 89.88 17.42 -25.15 -19.65 -86.77 -4.74 83.19

6000 -8.35 70.44 16.85 -45.49 -19.44 -101.04 -3.88 62.30

Device S-parameters are available for download off of the website at: http://www.wj.com

Blocking

Capacitor

RF OUT

RF Choke

0.018 µF

Bias

Resisto

RF IN

Bypass

Capacito

Blocking

acito

Vcc

Icc = 65 m

ECG055

Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 4 of 4 February 2009

ECG055B

InGaP HBT Gain Block

ECG055B-G Mechanical Information

This package is lead-free/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260

°C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes.

Outline Drawing

Land Pattern

Product Marking

The component will be marked with an

“E055G” designator with an alphanumeric lot

code on the top surface of the package. The

obsolete tin-lead package is marked with an

“E055” designator followed by an

alphanumeric lot code; it may also have been

marked with an “H” designator followed by a

3-digit numeric lot code.

Tape and reel specifications for this part are

located on the website in the “Application

Notes” section.

MSL / ESD Rating

ESD Rating: Class 1A

Value: Passes between 250 and 500V

Test: Human Body Model (HBM)

Standard: JEDEC Standard JESD22-A114

MSL Rating: Level 3 at +260 °C convection reflow

Standard: JEDEC Standard J-STD-020

Mounting Config. Notes

1. Ground / thermal vias are critical for the proper performance of

this device. Vias should use a .35mm (#80 / .0135”) diameter

drill and have a final plated thru diameter of .25 mm (.010”).

2. Add as much copper as possible to inner and outer layers near

the part to ensure optimal thermal performance.

3. Mounting screws can be added n ear the part to fasten the board

to a heatsink. Ensure that the ground / thermal via region

contacts the heatsink.

4. Do not put solder mask on the backside of the PC board in the

region where the board contacts the heatsink.

5. RF trace width depends upon the PC board material and

construction.

6. Use 1 oz. Copper minimum.

7. All dimensions are in millimeters (inches). Angles are in

degrees.

E055G

XXXX-X