TIP35 TIP35A TIP35B TIP35C
MAXIMUM RATINGS: (TC=25°C) SYMBOL TIP36 TIP36A TIP36B TIP36C UNITS
Collector-Base Voltage VCBO 40 60 80 100 V
Collector-Emitter Voltage VCEO 40 60 80 100 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 25 A
Peak Collector Current ICM 40 A
Continuous Base Current IB 5.0 A
Power Dissipation PD 125 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJC 1.0 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEO V
CE=30V (TIP35, TIP35A, TIP36, TIP36A) 1.0 mA
ICEO V
CE=60V (TIP35B, TIP35C, TIP36B, TIP36C) 1.0 mA
ICES VCE=Rated VCEO 0.7 mA
IEBO V
EB=5.0V 1.0 mA
BVCEO I
C=30mA (TIP35, TIP36) 40 V
BVCEO I
C=30mA (TIP35A, TIP36A) 60 V
BVCEO I
C=30mA (TIP35B, TIP36B) 80 V
BVCEO I
C=30mA (TIP35C, TIP36C) 100 V
VCE(SAT) I
C=15A, IB=1.5A 1.8 V
VCE(SAT) I
C=25A, IB=5.0A 4.0 V
VBE(ON) V
CE=4.0V, IC=15A 2.0 V
VBE(ON) V
CE=4.0V, IC=25A 4.5 V
hFE V
CE=4.0V, IC=1.5A 25
hFE V
CE=4.0V, IC=15A 10 100
hfe V
CE=10V, IC=1.0A, f=1.0kHz 25
fT V
CE=10V, IC=1.0A, f=1.0MHz 3.0 MHz
TIP35 TIP35A TIP35B TIP35C NPN
TIP36 TIP36A TIP36B TIP36C PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR TIP35 and TIP36
series devices are complementary silicon power
transistors manufactured by the epitaxial base process,
designed for high current amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-218 TRANSISTOR CASE
R2 (18-July 2013)
www.centralsemi.com
TIP35 TIP35A TIP35B TIP35C NPN
TIP36 TIP36A TIP36B TIP36C PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
TO-218 TRANSISTOR CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R2 (18-July 2013)
