62098HA (KT)/2239MO/D128MO/1283KI, TS No.1065-1/2
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number:EN1065C
GMA01, 01U
Epitaxial Planar Silicon Diode
Very High-Speed Switching,
Bias Stabilizing Applications
Specifications
Absolute Maximum Ratings at Ta = 25ËšC
Electrical Characteristics at Ta = 25ËšC
Package Dimensions
unit:mm
1114
[GMA01, 0U]
Features
· Glass sleeve structure.
· Allowable power dissipation : P=300mW max.
· Interterminal capacitance : c=3.0pF max.
· Reverse recovery time : t
rr
=4.0ns max.
· Small size, being about half of DO-35 package
heretofore in use.
C:Cathode
A:Anode
retemaraPlobmySsnoitidnoC10AMGU10AMGtinU
egatloVesreveRkaePV
MR 06501V
egatloVesreveRV
R55001V
tnerruCdrawroFkaePI
MF →063Am
tnerruCdeifitceRegarevAI
O→021Am
tnerruCdrawroFegruSI
MSF eslups1 →005Am
noitapissiDrewoPelbawollAP →003Wm
erutarepmeTnoitcnuJjT→571
erutarepmeTegarotSgtsT →571+ot56–
ËšC
ËšC
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
egatloVdrawroFV
FIFAm5.1=55.086.0V
tnerruCesreveRI
RVR)10AMG(55= 5.0Aµ
VR)U10AMG(57= 5.0Aµ
VR)U10AMG(V001= 5Aµ
ecnaticapaClanimretretnICV
RzHM1=f,0= 0.3Fp
emITyrevoceResreveRt
rr VRI,V6= FR,Am01= L05= Ω0.4sn
Reverse Recovery Time Test Circuit
Unit (resistance : Ω, capacitance : F)