Ordering number : ENN693F NPN Epitaxial Planar Silicon Transistors 2SC2814 High-Friquency General-Purpose Amplifier Applications Features Package Dimensions * Ultrasmall package enabiling compactness and slimness of sets. * High fT and small cre (fT=320MHz typ, cre=0.95pF typ). unit:mm 2018B [2SC2814] 0.5 0.4 0.16 0 to 0.1 0.8 1.1 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 3 1 : Base 2 : Emitter 3 : Collector SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 Collector-to-Emitter Voltage VCEO 20 V Emitter-to-Base Voltage VEBO IC 5 V 30 mA PC 150 mW 125 C -55 to +125 C Collector Current Collector Dissipation Junction Temperature Tj Storage Temperature Tstg V Electrical Characteristics at Ta = 25C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Base-to-Collector Time Constant fT Cre Ratings Conditions min typ VCB=10V, IE=0 VEB=4V, IC=0 max Unit 0.1 A 0.1 A VCE=6V, IC=1mA 40* VCE=6V, IC=1mA 200 320 VCB=6V, f=1MHz 0.7 0.95 1.2 20 270* MHz pF rbb'CC VCE=6V, IC=1mA, f=31.9MHz 12 Noise Figure NF VCE=6V, IC=1mA, f=100MHz 3.0 dB Power Gain PG VCE=6V, IC=1mA, f=100MHz 25 dB * : The 2SC2814 are classified as follows by hFE at 1mA : (Note) Marking : F hFE rank : 2, 3, 4, 5 (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Rank 2 3 4 5 hFE 40 to 80 60 to 120 90 to 180 135 to 270 www.onsemi.com ps Publication Order Number: 2SC2814/D 2SC2814 to 5pF NF, PG Test Circuit to 22pF to 30pF INPUT 50 to 30pF L1 to 22pF OUTPUT 50 L2 VCE VBE L1 : 1mmo plated wire 10mmo 4T, tap : 2T from VBE side. L2 : 1mmo plated wire 10mmo 7T, tap : 1T from VCE side. L3 : 1mmo enameled wire 10mmo 3T. IC -- VCE VCE=6V 25A 4 80 20A 3 15A 2 10A 60 40 5A 1 20 IB=0 0 0 2 4 IB -- VBE 100 30A Base Current, IB - A Collector Current, IC - mA 5 6 0 8 10 0 0.2 Collector-to-Emitter Voltage, VCE - V ITR05127 hFE -- IC 1000 0.6 0.8 1.0 ITR05128 f T -- IC 2 VCE=6V Gain-Bandwidth Product, fT - MHz 7 5 DC Current Gain, hFE 0.4 Base-to-Emitter Voltage, VBE - V 1000 3 2 100 7 5 3 2 VC E=12V 7 5 6 3V V 3 2 100 7 10 0.1 5 2 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC - A 5 Cre -- VCB 5 2 3 5 7 1.0 2 5 7 10 2 3 5 7 100 ITR05130 rbb'Cc -- IC 100 f=1MHz 3 Collector Current, IC - mA f=31.9MHz 7 Output Capacitance, rbb' Cc - ps Reverse Transfer Capacitance, Cre - pF 3 ITR05129 3 2 1.0 7 5 3 2 1.0 5 3 2 10 VCE=3V 7 6V 12V 5 3 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB - V 5 2 0.1 ITR05131 Rev.0 I Page 2 of 5 I www.onsemi.com 2 3 5 7 1.0 2 3 5 Collector Current, IC - mA 7 2 10 ITR05132 2SC2814 VCE (sat) -- IC 1.0 Collector Dissipation, PC - mW 3 2 0.1 7 5 5 7 2 10 3 5 Collector Current, IC - A 0 5 3 3 2 2 goe - S, coe - pF 5 120 2 1.0 3 5 5 5 3 3 2 2 10 7 7 5 5 2 1.0 3 5 Collector Current, IC - mA 2 1.0 3 5 7 10 ITR05136 Output Admittance yoe -- IC VCE=6V f=10MHz 2 g oe 10 7 5 3 c oe 2 1.0 3 10 ITR05137 3 7 5 7 2 1.0 3 5 Collector Current, IC - mA Input Admittance yie -- VCE IC=1mA f=100MHz cie 7 3 goe - mS, coe - pF 7 0.1 5 5 100 7 7 2 Collector Current, IC - mA 2 c ie c oe 3 g ie 3 3 10 ITR05135 1.0 g oe 5 7 Input Admittance yie -- IC VCE=6V f=10MHz 140 ITR05134 1.0 10 7 Collector Current, IC - mA 7 10 ITR05138 5 Reverse transfer admittance yre -- VCE 5 3 IC=1mA f=100MHz 3 2 10 2 cre gre gre - S 7 5 3 gie 2 1.0 1.0 100 7 cie - pF 100 7 2 80 VCE=6V f=1MHz 3 c ie 5 60 Output Admittance yoe -- IC 10 5 7 3 40 g ie 0.1 5 20 Ambient Temperature, Ta - C 2 3 gie - mS 40 100 ITR05133 0.01 gie - mS, cie - pF 60 7 2 2 80 100 7 1.0 7 5 5 3 3 2 2 10 2 3 5 7 10 2 0.1 7 1.0 Collector-to-Emitter Voltage, VCE - V ITR05139 Rev.0 I Page 3 of 5 I www.onsemi.com 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE - V ITR05140 cre - pF 3 VCE=6V f=1MHz 3 100 0 2 Input Admittance yie -- IC 5 120 20 3 2 1.0 gie - mS 140 5 cie - pF Collector-to-Emitter Saturation Voltage, VCE (sat) - V 7 PC -- Ta 160 IC =10 IB 2SC2814 Forward transfer admittance yfe -- VCE 10 IC=1mA f=100MHz 3 --bfe 7 5 3 2 coe 2 1.0 7 5 go e 3 2 1.0 1.0 2 3 5 7 0.1 1.0 2 10 Collector-to-Emitter Voltage, VCE - V ITR05141 Input Admittance yie -- IC 5 3 3 5 7 2 10 Reverse transfer admittance yre -- IC 3 VCE=6V f=100MHz 2 Collector-to-Emitter Voltage, VCE - V ITR05142 3 VCE=6V f=100MHz 2 c ie gre - S gie - mS, cie - pF 2 2 10 7 g ie 5 100 1.0 cre 7 7 gre 3 5 5 2 3 5 7 2 1.0 3 5 Collector Current, IC - mA 3 7 2 1.0 3 5 7 ITR05144 Output Admittance yoe -- IC 5 VCE=6V f=100MHz 3 g fe 5 7 Collector Current, IC - mA VCE=6V f=100MHz 7 5 ITR05143 Forward transfer admittance yfe -- IC 100 coe e goe - mS, coe - pF f --b gfe, bfe - mS 3 3 1.0 3 2 10 7 5 2 1.0 7 5 g oe 3 2 3 0.1 2 3 5 7 2 1.0 3 5 Collector Current, IC - mA 3 ITR05145 PG, NF -- IC 30 VCE=6V f=100MHz See specified Test Circuit. 28 Voltage Gain, PG - dB Noise Figure, NF 7 26 24 PG 22 20 18 16 6 NF 4 2 0 3 5 7 1.0 2 3 Collector Current, IC - mA 5 7 10 ITR05147 Rev.0 I Page 4 of 5 I www.onsemi.com 5 7 1.0 2 3 Collector Current, IC - mA 5 7 ITR05146 cre - pF gfe, bfe - mS IC=1mA f=100MHz gfe 2 Output Admittance yoe -- VCE 5 goe - mS, coe - pF 3 2SC2814 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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