Mar.2002
CM150E3U-24F
APPLICATION
Brake
MITSUBISHI IGBT MODULES
CM150E3U-24F
HIGH POWER SWITCHING USE
¡IC ...................................................................150A
¡VCES ......................................................... 1200V
¡Insulated Type
¡1-element in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
RTC
CIRCUIT DIAGRAM
C2E1
E2 C1
G2E2
(8.25)
(18)
25 25 21.5 2.5
108
14 14 14
93
±0.25
48
±0.25
3–M6 NUTS
22 8.5
18 7 7 1818
TAB #110. t=0.5
29
+1.0
–0.5
LABEL
1MAX
0.5
62
15.85
10.5
6
G2G1
Tc measured point
E2
E2 C1C2 E1
E1
0.5
CM
4–φ6.5 MOUNTING HOLES
4
Mar.2002
MITSUBISHI IGBT MODULES
CM150E3U-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
(Tj = 25°C)
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
1200
±20
150
300
150
300
600
1200
150
300
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
V
V
A
A
W
V
A
°C
°C
V
N • m
N • m
g
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
TC = 25°C
Pulse (Note 2)
TC = 25°C
Pulse (Note 2)
TC = 25°C
Clamp diode part
TC = 25°C Clamp diode part
Pulse Clamp diode part (Note 2)
Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value
Symbol Parameter
Collector current
Emitter current
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
VRRM
IF
IFM
Tj
Tstg
Viso
—
—
VCE = VCES, VGE = 0V
VGE = VCES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 600V, IC = 150A, VGE = 15V
VCC = 600V, IC = 150A
VGE1 = VGE2 = 15V
RG = 2.1Ω, Inductive load switching operation
IE = 150A
IE = 150A, VGE = 0V
IGBT part
FWDi part
Tc measured point is just under the chips
IF = 150A, Clamp diode part
IF = 150A
VCC = 600V, VGE1 = VGE2 = 15V
RG = 2.1Ω, Inductive load switching operation,
Clamp diode part
Clamp diode part
Case to fin, Thermal compound applied*2 (1/2 module)
IC = 15mA, VCE = 10V
IC = 150A, VGE = 15V
VCE = 10V
VGE = 0V
1
20
2.4
—
59
2.6
1.5
—
150
80
450
300
150
—
3.2
21
0.21
0.24
0.13*3
3.2
150
—
0.24
—
mA
µA
nF
nC
ns
ns
µC
V
Ω
°C/W
V
ns
µC
°C/W
—
—
1.8
1.9
—
—
—
1650
—
—
—
—
—
6.0
—
—
—
—
—
—
—
6.0
—
0.04
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.1
—
—
—
—
—
—
—
—
6V
V
57
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
External gate resistance
Thermal resistance
Forward voltage drop
Reverse recovery time
Reverse recovery charge
Thermal resistance*1
Contact thermal resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance*1
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
RG
Rth(j-c)Q
Rth(j-c)R
Rth(j-c’)Q
VFM
trr
Qrr
Rth(j-c)R
Rth(c-f)
Symbol Parameter Test conditions
VGE(th)
VCE(sat)
Unit
Typ.
Limits
Min. Max.
Mar.2002
MITSUBISHI IGBT MODULES
CM150E3U-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
VGE = 20V
Tj = 25°C
15
11
10
9.5
9
8.5
8
200
100
250
300
150
50
00 0.5 1 1.5 2 2.5 3 3.5 4
3
2.5
2
1.5
0.5
1
00 200100 300
Tj = 25°C
Tj = 125°C
VGE = 15V
10
1
10
2
2
3
5
7
10
3
2
3
5
7
0.5 1 1.5 2 2.5 3 3.5
Tj = 25°C
5
4
3
2
1
0206 8 12 1610 14 18
IC = 300A
IC = 150A
IC = 60A
Tj = 25°C
10
–1
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
2
10
0
357 2
10
1
357 2
10
2
357
VGE = 0V
Cies
Coes
Cres
10
1
10
2
57
10
3
23 57
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
0
Conditions:
VCC = 600V
VGE = ±15V
RG = 2.1Ω
Tj = 125°C
Inductive load
23
td(off)
td(on)
tf
tr
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE AND CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
SWITCHING TIMES (ns)
COLLECTOR CURRENT I
C
(A)
Mar.2002
MITSUBISHI IGBT MODULES
CM150E3U-24F
HIGH POWER SWITCHING USE
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
trr
Irr
0
6
4
2
10
8
16
14
12
20
18
0 500 1500 25001000 2000
VCC = 400V
VCC = 600V
IC = 150A
10
1
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
Single Pulse
TC = 25°C
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 2.1Ω
T
j
= 25
°C
Inductive load
REVERSE RECOVERY CHARACTERISTICS
OF CLAMP DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(°C/W)
TMIE (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
IGBT part: Per unit base = R
th(j–c)
= 0.21°C/W
FWDi
part: Per unit base = R
th(j–c)
= 0.24°C/W
CLAMP Di part: Per unit base = R
th(j–c)
= 0.24°C/W