SFH 4556
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
High Power Infrared Emitter (850 nm)
Lead (Pb) Free Product - RoHS Compliant
2012-12-03 1
Wesentliche Merkmale
• Infrarot LED mit hoher Ausgangsleistung
• Kurze Schaltzeiten
Anwendungen
• Infrarotbeleuchtung für Kameras
• Sensorik
• Datenübertragung
Sicherheitshinweise
Je nach Betriebsart emittieren diese Bauteile
hochkonzentrierte, nicht sichtbare Infrarot-
Strahlung, die gefährlich für das menschliche
Auge sein kann. Produkte, die diese Bauteile
enthalten, müssen gemäß den Sicherheits-
richtlinien der IEC-Normen 60825-1 und 62471
behandelt werden.
Typ
Type
Bestellnummer
Ordering Code
Strahlstärkegruppierung1) (IF = 100 mA, tp = 20 ms)
Radiant Intensity Grouping1)
Ie (mW/sr)
SFH 4556 Q65110A6087 63 (typ. 145)
1) gemessen bei einem Raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr
Features
• High Power Infrared LED
• Short switching times
Applications
• Infrared Illumination for cameras
• Sensor technology
• Data transmission
Safety Advices
Depending on the mode of operation, these
devices emit highly concentrated non visible
infrared light which can be hazardous to the
human eye. Products which incorporate these
devices have to follow the safety precautions
given in IEC 60825-1 and IEC 62471.
2012-12-03 2
SFH 4556
Grenzwerte (TA = 25 C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top , Tstg – 40 + 100 C
Sperrspannung
Reverse voltage
VR5 V
Vorwärtsgleichstrom
Forward current
IF100 mA
Stoßstrom, tp 100 s, D = 0
Surge current
IFSM 1 A
Verlustleistung
Power dissipation
Ptot 180 mW
Wärmewiderstand Sperrschicht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 16 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 16 mm2 each
RthJA
450
K/W
Kennwerte (TA = 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA
peak 860 nm
Schwerpunkt-Wellenlänge der Strahlung
Centroid wavelength
IF = 100 mA
centroid 850 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA
 30 nm
Abstrahlwinkel
Half angle
20 Grad
deg.
Aktive Chipfläche
Active chip area
A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimension of the active chip area
L B
L W0.3 0.3 mm²
SFH 4556
2012-12-03 3
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, RL = 50 
Switching times, e from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50
tr, tf12 ns
Durchlassspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.5 ( 1.8)
2.4 (< 3.0)
V
V
Sperrstrom
Reverse current
IRnot designed for
reverse
operation
A
Gesamtstrahlungsfluss
Total radiant flux
IF = 100 mA, tp = 20 ms
e typ 60 mW
Temperaturkoeffizient von Ie bzw. e,
IF = 100 mA
Temperature coefficient of Ie or e, IF = 100 mA
TCI– 0.5 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA
TCV– 0.7 mV/K
Temperaturkoeffizient von , IF = 100 mA
Temperature coefficient of , IF = 100 mA
TC+ 0.3 nm/K
Kennwerte (TA = 25 C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
2012-12-03 4
SFH 4556
Abstrahlcharakteristik
Radiation Characteristics Irel = f ()
Strahlstärke Ie in Achsrichtung1)
gemessen bei einem Raumwinkel = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of = 0.01 sr
Bezeichnung
Parameter
Symbol Werte
Values
Einheit
Unit
SFH 4556
-V
SFH 4556
-AW
SFH 4556
-BW
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
Ie max
63
125
100
200
160
320
mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 25 s
Ie typ 750 1200 1900 mW/sr
1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) /
Only one bin in one packing unit (variation lower 2:1)
OHL03921
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚0.40.60.81.0
100˚
90˚
80˚
70˚
60˚
50˚
0˚10˚20˚30˚40˚
0
0.2
0.4
0.6
0.8
1.0
ϕ
SFH 4556
2012-12-03 5
Relative Spectral Emission
Irel = f ()
Forward Current IF = f (VF)
Single pulse, tp = 100 s
700
0nm
%
OHF04132
20
40
60
80
100
950750 800 850
I
rel
λ
OHL01713
F
I
10-4
0.5 1 1.5 2 2.5 V3
100
A
0
F
V
-1
10
5
5
10-2
-3
5
10
Radiant Intensity
Single pulse, tp = 25 s
Permissible Pulse Handling
Capability IF = f (), TA = 25 C,
duty cycle D = parameter
Ie
Ie 100 mA = f (IF)
OHL01715
10
-3
mA
10
1
0
10
5
5
10
-1
-2
5
10
e
e (100 mA)
I
I
I
F
0
10
1
10
2
10
3
1055
0.05
210-1-2-3-4-5
1010 1010 10
t
p
10 10s10
0
0.1
0.005
0.02
0.01
D
=
T
t
A
I
F
D
=
I
P
T
F
P
t
OHF05438
0.2
0.5
1
0.033
0.2
0.4
0.6
0.8
1.0
1.2
Max. Permissible Forward Current
IF = f (TA), RthJA = 450 K/W
Permissible Pulse Handling
Capability IF = f (), TA = 85 C,
duty cycle D = parameter
T
OHR00880
0
F
Ι
0 20 40 60 80 100˚C
mA
25
50
75
100
125
2012-12-03 6
SFH 4556
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Empfohlenes Lötpaddesign Wellenlöten TTW
Recommended Solder Pad Design TTW Soldering
Maße in mm (inch) / Dimensions in mm (inch).
4 (0.157)
OHLPY985
4.8 (0.189)
Anode
SFH 4556
2012-12-03 7
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach IEC 61760-1)
TTW Soldering (acc. to IEC 61760-1)
Published by
OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
0
0s
OHA04645
50
100
150
200
250
300
t
T
˚C
235 ˚C - 260 ˚C
First wave
20 40 60 80 100 120 140 160 180 200 220 240
Second wave
10 s max., max. contact time 5 s per wave
Preheating
T
Δ
100 ˚C
120 ˚C
130 ˚C
Typical
Cooling
ca. 3.5 K/s typical
ca. 2 K/s
ca. 5 K/s
Continuous line: typical process
Dotted line: process limits
< 150 K