@ Transistor modules (Single arm chopper) Max. ratings : Electrical characteristics 5 Transistor section gta Transistor section gagesion | Type No. Vee Pode Pg Py Te ge Bee Yee te tye Po Mee q Connettions (sus) } | (eat) | PW) TAR be bo Ww) Ce) (A) MV) | (as) i fash |) M8 QM30E27-H 600 30. 16 | 250 | 150 30 7 | 20, 15 1 15) AS OMS50E2Y-H 600 | 50 3 | 310 | 150 50 7 | 20 / 18 | 15 is iA A B QM75E2Y-H 6007545 350 | 150 75 | O75 2.0 P15 15 A QM 100E2Y-Hk 600 | 100 6 | 620 | 150 100 75 | (20 745 15 1A QM150E2Y-HK 600 | 150 9 | 690 | 150 150 75 2.0 15 15 A. t QM30E2Y-2H 1000 | 30 2 | 310 | 150 30 75 2.5 418 16 1B QMS50E2Y-2H 1000; 50 3 | 400 | 150 50. 75 | 28 18 is 6 &% , QM75E2Y-2H tooo | 7s | 4 | 500 | 150 7% 78 | 25 ia) tS BOT | QM 100E2Y-2HK i000; 100 | 5 | 800 | 150 i075 | 2S 18 15 (Cc Ea QM 150E2Y-2HK 100c | 150 8 1000! 150) 150 75 | 25 18 15 IC : QM30E3Y-H 600 | 30. 18 | 250 | 150 30. ~O75 |S 2.0 15 15 10 QM50E3Y-H 600 | 50 3. 310 | 150 50 (75 2.0 i5 15 po E. QM75E3Y-H 600 | 75 | 45 | 350 | 150 76 75 | 20, i) 15) OF) sR QM100E3Y-HK 600 | 100 6 | 620 150 100 | 75 : 20 15 15 0 Tas! TE) QM i50E3Y-HK 600 | 150 g | 690, 150 180 | 75 20 15 15D OQM30E3Y-2H 1000 | 30 2 | 310, 150 30~COH | 18 SE; QMB0E3Y-2H 1o00 | 50 3 | 400 160 50 75 | 25 18 15 OE _ QM75E3Y-2H 1000 | 75 4 | 500 180 76 75 | 25 18 ibe 4 QM 100E3Y-2HK - 1000 | 100 5 | goo 160, 100 75 | 25 18 16 F a QM150E3Y-2HK y000 | 150 a | i000} 160 150 75 | 25 18 15 OF @ Transistor modules (Bridge type} Max. ratings i Electrical characteristics | E Transistor section ~~ [Diode section: - Transister section Diode section = Type No. Veex fo. te Ig]. Pe T ke hee Vor o1 ton tut Vege | | 3 Connections {sus} . = FE {sat} on wm bow] ow | ow} coy ow | Mi (es) os) | ow 18 QMI0TE-H 600 | 10 1 74) 150 10 7% | 20 | 15 | 125 1S OA QM1OTE-HB 600 | 10 1 74 | 15010 250 | 20 1.5 12 15 /A QM10KD-HB 600 10 1 74 | 150 10 250 | 20 | 15 12 15 1B QMI5TD-H 600. 15 |) 1 100. 150 15 7% | 20 1S) O18 QMI5TD-HB 600.18 1 76 | 150 15 250. 20 | 15 204A QM 15TG-9B 450.15 1 83 | 160 15 250 | 20 | 15 i2 15 1A QM 15KD-HB 600.15 1 7 | 150 | 15 20 20 | 15 12 15 iB. QM20TD-H 60020 t | 7 | 0 >) 20 . 75 | 20 | 18 14 16 A. QM20TD-HB 60020 { 83 | 150 20 250 | 20 | 1.5 i445 A QM20KD-HB 600 20 1 83 | 150 20. 250200 | 18 1445 B QM20TG-9B 450 20 1 100 180 | 20 | 20 20 | 15 | 12) 15 JA OM30TF-HB 600 30) 18 20 i680 | 30 . 750 26 | 20 i) 18 1C if QM30TX-H 600 30 | 18 | 20 160 | 30 | 75 20 | 15 15) 1.85 Al 2 QM30TX-HB 600 30. 1.8 | 250. 480 30. 75025 2.0 at) 18 Pam QMSOTF-HB 60050 3. 310 | 160 50 750. 25: 20 io 4B on QM50TX-H 600-50 3/310 | 150 50 | 75). 20.) 15 i5 = QM50TX-HB 600 50 3, 310 | 150. 80 | 750 | 25 2.0 i a QM75TX-H 600. 75 | 45 | 350) {50 | 75 7% | 20 | 25) 15. OM75TX-HB 600. 75) 45 | 380) 180 | 78 750 | 25 | 20 ir QM75TF-HB 600 | 75 45 | 360, 150 | 75 70 | 25 | 20 1 OM 100TX1-H 600 | 100 5 | 360 | 150 100 go | 20 | 20 16 OM100TF-HB 600 100 6 | 620 | 180 100 750 | 25 | 25 12 Bo QM 100TX1-HB 600 | 100 | 45 - 350 | 180 100 750 25 | 20 "i 8 OMI5TB-2H 100015 i 150 |) 150 1 7% 25 | 25 | 18 16 OMI15TB-2HB 1000-15 1 | 150 150 1 = 250s. | 2 13 18 QM30TB-2H 1000 -30~t*t si<Sii COC GH, HS ii 18 Cc QM307T8-2HB 100030 2. 310 | 150 50 70 | 40. 25 18 18 QM507TB-2H 1000 | 50 3. 400. 150 50 7% | 25 | 25 ie) iB QMS0TB-2HB "7000-50 3 460 | 150 50 750 | 40 | 25 ig 18 QM15TB-24 1200 5 1 150 15015 75 30 | 25 18 1B IC. QMI5TB-24B 1200 15 1 | 150 | 150 15 250 3.0 | 20 13 15 3c QM30TB-24 1200 30.~*asSi<C | 88 7 3025 1@ =O iB IC QM30TB-248 1200 30~=S 2s, 50 , = 0's Hs 18 18S QM50TB-24 i200 50 3 400 150 | 50 7% 30 | 25 18 18 OC QM50TB-248 1200 50 3 400 150 | 50 , 750 40 | 25 | 18 18 6) 132 * New product * * ; Under development