Silicon Hyperabrupt Tuning Diodes DKV6530 Series ALPHA IND/ SEMICONDUCTOR Features @ VHF to UHF Operation @ Guaranteed Minimum Q Values @ Octave Tuning from 3 to 20 Volts m@ Linear Frequency vs. Voltage Characteristics Types DKV6530 Series DKV2020 Series DKV3801 Series DKV3802 Series DKV3803 Series DKV3804 Series HSE D MM 0585443 0001323 be2 MALP Description Alpha uses ion implantation to provide this series of hyperabrupt tuning diodes with closely controlled char- acteristics. The highly reproducible capacitance versus voltage behavior of this family permits Alpha to supply matched sets and also ensures long-term availability of parts with uniform electrical properties. Passivated, her- metically-sealed construction allows their use under the most adverse conditions, both in commercial equipment and in high reliability space and military applications. Hyperabrupt diodes are offered in various package styles to suit current applications. See the following tables for further details. Capacitance may change slightly due to variations in package parasitics. Applications Designer oriented families offer types selected and tested with each customers application in mind. Pre- mium units DKV6533C and DKV6534C, and their corre- sponding close-tolerance units having an F suffix, are ideal for octave tuning up to 800 MHz. When tuned from 8 to 20 volts of reverse bias, they offer a 2 to 1 capacitance ratio, very high Q values, and excellent large signal handling capabilities. Diodes DKV6533B, E and DKV6534B, E are suitable for similar applications up to 500 MHz. Alphas hyperabrupt tuning diodes are ideal for straight line frequency versus voliage applications in crystal or LC tuned circuits as well as for frequency or phase modulators, for which the customer may substi- tute the DKV6533 or DKV6534 devices when minimum cost is of prime importance. All devices typically handle one-volt rms signals with less than 1 percent intermodu- lation or cross-modulation distortion. Absolute Maximum Ratings Parameter Symbol Value Units Reverse Voltage Va Same as V, | Volts Forward Current I, 40 mAdc Power Dissipation P, 200 mW (T,=25C) Operating Temperature| T,, | -55to +125 C Storage Temperature Tyg | -55 to +175 C 40 I] 30 os 0 NI = Pp OKV-6533 a (10 A 3 Nv a y g 6 SS 7 NSS oa N 2 1 2 3.4 6 8 10 20 REVERSE VOLTAGE, Va (Vide) Figure 1. Typical Capacitance vs. Tuning Voltage (TA=25C) 4-25Silicon Hyperabrupt Tuning Diodes DKV6530 Series ALPHA IND/ SEMICONDUCTOR WBE D MM 0585443 0001324 559 MBALP 707-/9 8000 6000 | | ae f= 50 MHz mL. Va 4000) Vf 2000 Ay OKV-6534 : eo oF / e ZL s 1000 / = 3 800 Le 400