AOT266L/AOB266L/AOTF266L
60V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 140A/78A
R
DS(ON)
(at V
GS
=10V) < 3.5mΩ(< 3.2mΩ
∗
)
R
DS(ON)
(at V
GS
=6V) < 4.0mΩ(< 3.8mΩ
∗
)
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
V
GS
60V
AOT266L/AOB266L AOTF266L
Drain-Source Voltage 60
The AOT266L & AOB266L & AOTF266L uses Trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Both conduction and switching power losses are
minimized due to an extremely low combination of R
DS(ON)
,
Ciss and Coss. This device is ideal for boost converters
and synchronous rectifiers for consumer, telecom,
industrial power supplies and LED backlighting.
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V±20Gate-Source Voltage
G
D
S
TO-263
D2PAK
GDSGDS
D
S
G
Top View
TO-220FTO-220
AOTF266LAOT266L AOB266L
I
DM
I
AS
E
AS
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State R
θJC
* Surface mount package TO263
78
110 55
450
Maximum Junction-to-Case
Pulsed Drain Current
C
Continuous Drain
Current
G
Power Dissipation
A
15
T
C
=100°C
Power Dissipation
B
P
D
134 22.5
-55 to 175
°C/W
°C/W
Maximum Junction-to-Ambient
A D
0.56 60
3.3
W
T
A
=70°C 1.3
T
A
=25°C 2.1
P
DSM
A
T
A
=25°C I
DSM
268 45.5
18
140
90
Avalanche energy L=0.1mH
C
A
T
A
=70°C
Continuous Drain
Current
405
I
D
W
T
C
=25°C
°C
Thermal Characteristics
Parameter AOT266L/AOB266L AOTF266L
Maximum Junction-to-Ambient
A
°C/W
R
θJA
15
60
T
C
=25°C
T
C
=100°C
mJ
Avalanche Current
C
14 A
Units
Junction and Storage Temperature Range
Rev 2 : May 2012
www.aosmd.com Page 1 of 7
AOT266L/AOB266L/AOTF266L
Symbol Min Typ Max Units
BV
DSS
60 V
V
DS
=60V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 2.2 2.7 3.2 V
I
D(ON)
450 A
2.9 3.5
T
J
=125°C 4.9 5.9
g
FS
80 S
V
SD
0.65 1 V
I
S
140 A
C
iss
5650 pF
C
oss
720 pF
C
rss
20 pF
R
g
0.4 0.9 1.4 Ω
Q
(10V)
65
90
nC
V
GS
=10V, I
D
=20A mΩ
TO263
V
GS
=6V, I
D
=20A 3 3.8 mΩ
TO263
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
I
DSS
µA
Zero Gate Voltage Drain Current
mΩ
TO220/TO220F
On state drain current V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Gate-Body leakage current V
DS
=V
GS，
I
D
=250µA
V
DS
=0V, V
GS
=±20V
R
DS(ON)
Static Drain-Source On-Resistance 2.6 3.2
Forward Transconductance
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
Diode Forward Voltage
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance V
GS
=0V, V
DS
=30V, f=1MHz
DYNAMIC PARAMETERS
Total Gate Charge
SWITCHING PARAMETERS
mΩ
TO220/TO220F 3.2 4
V
GS
=6V, I
D
=20A
Q
g
(10V)
65
90
nC
Q
gs
20 nC
Q
gd
7 nC
t
D(on)
21 ns
t
r
20 ns
t
D(off)
36 ns
t
f
6 ns
t
rr
27 ns
Q
rr
145 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=30V, R
L
=1.5Ω,
R
GEN
=3Ω
Turn-Off Fall Time
V
GS
=10V, V
DS
=30V, I
D
=20A
Turn-On DelayTime
I
F
=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
Total Gate Charge
Gate Source Charge
Gate Drain Charge
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PDis based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 2 : May 2012 www.aosmd.com Page 2 of 7
AOT266L/AOB266L/AOTF266L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
20
40
60
80
100
2 2.5 3 3.5 4 4.5 5 5.5 6
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
2
4
6
8
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=6V
ID=20A
VGS=10V
ID=20A
25°C
125°C
V
DS
=5V
VGS=6V
0
20
40
60
80
100
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4V
4.5V
10V
Vgs=3.5V
6V
VGS=10V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
0
2
4
6
8
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev 2 : May 2012 www.aosmd.com Page 3 of 7
AOT266L/AOB266L/AOTF266L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 10 20 30 40 50 60 70
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
1000
2000
3000
4000
5000
6000
7000
8000
0 10 20 30 40 50 60
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
100
200
300
400
500
600
0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
Coss
Crss
VDS=30V
ID=20A
TJ(Max)=175°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT266L and AOB266L (Note F)
10
µ
s
10ms
1ms
DC
RDS(ON)
TJ(Max)=175°C
TC=25°C
100µs
40
for AOT266L and AOB266L (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT266L and AOB266L (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Area for AOT266L and AOB266L (Note F)
RθJC=0.56°C/W
Rev 2 : May 2012 www.aosmd.com Page 4 of 7
AOT266L/AOB266L/AOTF266L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 12: Maximum Forward Biased
Safe Operating Area for AOTF266L
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
100
µ
s
0
100
200
300
400
500
600
0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-Case
for AOTF266L (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=175°C
TC=25°C
RθJC=3.3°C/W
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF266L (Note F)
Rev 2 : May 2012 www.aosmd.com Page 5 of 7
AOT266L/AOB266L/AOTF266L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
50
100
150
200
250
300
0 25 50 75 100 125 150 175
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 16: Power De-rating (Note F)
0
30
60
90
120
150
0 25 50 75 100 125 150 175
Current rating ID(A)
TCASE (°
°°
°C)
Figure 17: Current De
-
rating (Note F)
1
10
100
1000
0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 18: Single Pulse Power Rating Junction
-
to
-
TA=25°C
10
100
1000
1 10 100 1000
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 15: Single Pulse Avalanche capability
(Note C)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
40
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 19: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 17: Current De
-
rating (Note F)
Figure 18: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
RθJA=60°C/W
Rev 2 : May 2012 www.aosmd.com Page 6 of 7
AOT266L/AOB266L/AOTF266L
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev 2 : May 2012 www.aosmd.com Page 7 of 7
