AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary The AOT266L & AOB266L & AOTF266L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 60V 140A/78A RDS(ON) (at VGS=10V) < 3.5m (< 3.2m) RDS(ON) (at VGS=6V) < 4.0m (< 3.8m) 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F D D G G AOT266L D S AOTF266L G D AOB266L Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol AOT266L/AOB266L VDS Drain-Source Voltage 60 Gate-Source Voltage VGS TC=25C Continuous Drain Current G Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25C Power Dissipation B TC=100C Power Dissipation A TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 55 IAS 90 A EAS 405 mJ 268 45.5 134 22.5 2.1 TJ, TSTG Steady-State Steady-State RJA RJC -55 to 175 AOT266L/AOB266L 15 60 0.56 W W 1.3 Symbol t 10s A A 14 PDSM Junction and Storage Temperature Range V 18 PD TA=25C Units V 450 IDSM TA=70C AOTF266L 78 110 IDM TA=25C Continuous Drain Current S G 20 140 ID TC=100C C S S C AOTF266L 15 60 3.3 Units C/W C/W C/W * Surface mount package TO263 Rev 2 : May 2012 www.aosmd.com Page 1 of 7 AOT266L/AOB266L/AOTF266L Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Min ID=250A, VGS=0V Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGSID=250A 2.2 ID(ON) On state drain current VGS=10V, VDS=5V 450 VGS=10V, ID=20A TJ=125C VGS=6V, ID=20A TO220/TO220F VGS=10V, ID=20A TO263 VGS=6V, ID=20A gFS Forward Transconductance TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 100 nA 2.7 3.2 V 2.9 3.5 4.9 5.9 3.2 4 m 2.6 3.2 m 3 3.8 m A 80 0.65 DYNAMIC PARAMETERS Ciss Input Capacitance Coss V 5 IGSS Static Drain-Source On-Resistance Units 1 TJ=55C TO220/TO220F Max 60 VDS=60V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=30V, f=1MHz S 1 V 140 A 5650 pF 720 pF 20 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS=10V, VDS=30V, ID=20A Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr 0.4 m pF 0.9 1.4 65 90 nC 20 nC Gate Drain Charge 7 nC Turn-On DelayTime 21 ns 20 ns VGS=10V, VDS=30V, RL=1.5, RGEN=3 36 ns 6 ns IF=20A, dI/dt=500A/s 27 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 145 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2 : May 2012 www.aosmd.com Page 2 of 7 AOT266L/AOB266L/AOTF266L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 4.5V 6V 80 80 10V 60 ID(A) ID (A) 60 4V 125C 40 40 20 20 25C Vgs=3.5V 0 0 0 1 2 3 4 2 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 3 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 Normalized On-Resistance 2.2 6 RDS(ON) (m ) 2.5 VGS=6V 4 2 VGS=10V 2 VGS=10V ID=20A 1.8 17 5 2 VGS=6V 10 1.6 1.4 1.2 ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 8 1.0E+02 ID=20A 1.0E+01 1.0E+00 IS (A) RDS(ON) (m ) 40 125C 6 4 125C 1.0E-01 1.0E-02 25C 1.0E-03 2 25C 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2 : May 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT266L/AOB266L/AOTF266L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8000 VDS=30V ID=20A 7000 Ciss 8 Capacitance (pF) VGS (Volts) 6000 6 4 5000 4000 Coss 3000 2000 2 1000 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 70 0 10s 10s 100s RDS(ON) 60 1ms 10ms 10.0 DC 1.0 TJ(Max)=175C TC=25C 0.1 TJ(Max)=175C TC=25C 500 Power (W) 100.0 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 600 1000.0 ID (Amps) Crss 0 17 5 2 10 400 300 200 0.0 100 0.01 0.1 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT266L and AOB266L (Note F) 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case for AOT266L and AOB266L (Note F) Z JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJC=0.56C/W 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT266L and AOB266L (Note F) Rev 2 : May 2012 www.aosmd.com Page 4 of 7 AOT266L/AOB266L/AOTF266L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 1000.0 100s 1ms 10ms 10.0 1.0 DC TJ(Max)=175C TC=25C 0.1 TJ(Max)=175C TC=25C 500 Power (W) ID (Amps) 100.0 10s RDS(ON) limited 400 300 200 100 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.001 0.01 0.1 1 10 100 1000 17 Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-to-Case 5 for AOTF266L (Note F) Figure 12: Maximum Forward Biased Safe Operating Area for AOTF266L 2 10 Z JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJC=3.3C/W 1 0 18 0.1 PD Single Pulse Ton 0.01 0.00001 T 40 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF266L (Note F) Rev 2 : May 2012 www.aosmd.com Page 5 of 7 AOT266L/AOB266L/AOTF266L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 TA=25C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100C 100 TA=150C TA=125C 250 200 150 100 50 10 0 1 10 100 1000 Time in avalanche, tA ( s) Figure 15: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE ( C) Figure 16: Power De-rating (Note F) 175 1000 150 TA=25C 100 Power (W) Current rating ID(A) 120 90 60 17 5 2 10 10 30 0 1 0 25 50 75 100 125 150 TCASE ( C) Figure 17: Current De-rating (Note F) 175 0 0.1 10 1000 18 Pulse Width (s) Figure 18: Single Pulse Power Rating Junction-toAmbient (Note H) 0.001 Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJA=60C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 19: Normalized Maximum Transient Thermal Impedance (Note H) Rev 2 : May 2012 www.aosmd.com Page 6 of 7 AOT266L/AOB266L/AOTF266L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 2 : May 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7