2011-10-13
1
BCP54...-BCP56...
NPN Silicon AF Transistors
• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BCP51...BCP53 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BCP54
BCP54-16
BCP55
BCP55-16
BCP56-10
BCP56-16
*
*
*
*
*
*
1=B
1=B
1=B
1=B
1=B
1=B
2=C
2=C
2=C
2=C
2=C
2=C
3=E
3=E
3=E
3=E
3=E
3=E
4=C
4=C
4=C
4=C
4=C
4=C
-
-
-
-
-
-
-
-
-
-
-
-
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
* Marking is the same as the type-name
2011-10-13
2
BCP54...-BCP56...
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BCP54
BCP55
BCP56
VCEO
45
60
80
V
Collector-base voltage
BCP54
BCP55
BCP56
VCBO
45
60
100
Emitter-base voltage VEBO 5
Collector current IC1 A
Peak collector current, tp ≤ 10 ms ICM 1.5
Base current IB100 mA
Peak base current IBM 200
Total power dissipation-
TS ≤ 120°C
Ptot 2 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 15 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-10-13
3
BCP54...-BCP56...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCP54...
IC = 10 mA, IB = 0 , BCP55...
IC = 10 mA, IB = 0 , BCP56-10, -16
V(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCP54...
IC = 100 µA, IE = 0 , BCP55...
IC = 100 µA, IE = 0 , BCP56-10, -16
V(BR)CBO
45
60
100
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
DC current gain1)
IC = 5 mA, VCE = 2 V
IC = 150 mA, VCE = 2 V, BCP54/BCP55
IC = 150 mA, VCE = 2 V, BCP56-10
IC = 150 mA, VCE = 2 V, BCP54-16...BCP56-16
IC = 500 mA, VCE = 2 V
hFE
25
40
63
100
25
-
-
100
160
-
-
250
160
250
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat - - 0.5 V
Base-emitter voltage1)
IC = 500 mA, VCE = 2 V
VBE(ON) - - 1
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
fT- 100 - MHz
1Pulse test: t < 300µs; D < 2%
2011-10-13
4
BCP54...-BCP56...
DC current gain hFE = ƒ(IC)
VCE = 2 V
EHP00268BCP 54...56
3
10 mA
0
10
3
10
5
5
10
0
10
1
10
1
C
FE
h
Ι
2
10
2
10
C
100
5
25
C
-50
C
10
4
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0
EHP00271BCP 54...56
CEsat
V
0.4 V 0.8
10
0
10
1
3
10
Ι
C
mA
C
2
10
0.2 0.6
10
4
100
25 C
C
-50
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
0
10
EHP00270BCP 54...56
BEsat
V
0
4
10
Ι
C
mA
0.2
1
10
2
10
3
10
0.4 0.6 0.8 1.2V
C
100
25
C
-50
C
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
0
10
EHP00269BCP 54...56
A
T
150
-1
4
10
Ι
CBO nA
50 100
0
10
1
10
3
10
C
102
max
typ
