TPC8208
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC8208
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 6.3 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 20 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V
Gate-source voltage VGSS ±12 V
DC (Note 1) ID 5
Drain current
Pulse (Note 1) IDP 20
A
Single-device
operation (Note 3a) PD (1) 1.5
Drain power
dissipation
(t = 10 s)
(Note 2a)
Single-device value
at dual operation
(Note 3b)
PD (2) 1.1
W
Single-device
operation (Note 3a) PD (1) 0.75
Drain power
dissipation
(t = 10 s)
(Note 2b)
Single-device value
at dual operation
(Note 3b)
PD (2) 0.45
W
Single pulse avalanche energy
(Note 4)
EAS 16.3 mJ
Avalanche current IAR 5 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR 0.1 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
8 7 6 5
1 2 3 4
TPC8208
2009-09-29
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Thermal Characteristics
Characteristics Symbol Max Unit
Single-device operation
(Note 3a) Rth (ch-a) (1) 83.3
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2) 114
°C/W
Single-device operation
(Note 3a) Rth (ch-a) (1) 167
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2) 278
°C/W
Marking (Note 6)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: VDD = 16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 5 A
Note 5: Repetitive rating:pulse width limited by maximum channel temperature
Note 6: • on the lower left of the marking indicates Pin 1.
Note 7: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(b)
TPC8208
Lot No.
Note 7
Part No. (or abbreviation code)
TPC8208
2009-09-29
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 μA
Drain cut-OFF current IDSS V
DS = 20 V, VGS = 0 V ⎯ ⎯ 10 μA
V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯
Drain-source breakdown voltage
V (BR) DSX ID = 10 mA, VGS = −12 V 8 ⎯ ⎯
V
Gate threshold voltage Vth V
DS = 10 V, ID = 200 μA 0.5 ⎯ 1.2 V
VGS = 2.0 V, ID = 2.5 A ⎯ 57 100
VGS = 2.5 V, ID = 2.5 A ⎯ 46 70
Drain-source ON resistance RDS (ON)
VGS = 4.0 V, ID = 2.5 A ⎯ 38 50
mΩ
Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 3.2 6.3 ⎯ S
Input capacitance Ciss ⎯ 780 ⎯
Reverse transfer capacitance Crss ⎯ 90 ⎯
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ 100 ⎯
pF
Rise time tr ⎯ 5.0 ⎯
Turn-ON time ton ⎯ 12 ⎯
Fall time tf ⎯ 2.7 ⎯
Switching time
Turn-OFF time toff
Duty
<
=
1%, tw = 10 μs ⎯ 21 ⎯
ns
Total gate charge
(gate-source plus gate-drain) Qg ⎯ 9.5 ⎯
Gate-source charge 1 Qgs1 ⎯ 2.0 ⎯
Gate-drain (“miller”) charge Qgd
VDD
∼
−
16 V, VGS = 5 V, ID = 5 A
⎯ 2.2 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 20 A
Forward voltage (diode) VDSF I
DR = 5 A, VGS = 0 V ⎯ ⎯ −1.2 V
RL = 4 Ω
VDD
∼
−
10 V
0 V
VGS 5 V
4.7 Ω
ID = 2.5 A
VOUT
TPC8208
2009-09-29
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ID – VDS
ID – VDS
ID – VGS
VDS – VGS
|Yfs| – ID
RDS (ON) – ID
Forward transfer admittance ⎪Yfs⎪ (S)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Drain current ID (A)
Drain-source voltage VDS (V)
Drain current ID (A)
Gate-source voltage VGS (V)
Drain current ID (A)
Gate-source voltage VGS (V)
Drain current ID (A) Drain current ID (A)
Drain-source ON resistance
RDS (ON) (mΩ)
VGS = 1.4 V
0 0.2 0.4 0.6
Common source
Ta = 25°C
Pulse test
0.8 1
0
2
4
6
8
10
1.9
2.5
2
4
10
3
1.8
1.7
1.6
1.5
0
0 0.5 1 1.5 2 2.5
2
4
6
8
10
Common source
VDS = 10 V
Pulse test
Ta = −55°C
100
25
0
0 2 4 6 8 10 12
0.2
0.4
0.6
0.8
1.0
Common source
Ta = 25°C
Pulse test
ID = 5 A
2.5
1.2
1
0.1 1 10 100
10
100
1000
VGS = 2.5 V
4
Common source
Ta = 25°C
Pulse test
0.1
0.1 1 10 30
1
10
100
Common source
VDS = 10 V
Pulse test
Ta = −55°C
100
25
0
4
8
12
16
20
0 0.4 0.8 1.2 1.6 2.0
VGS = 1.4 V
10
5
4
Common
source
Ta = 25°C
Pulse test
1.8
2.6
32.4
2.2
2.0
1.6
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2009-09-29
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RDS (ON) – Ta
IDR – VDS
Capacitance – VDS
Vth – Ta
PD – Ta
Dynamic input/output characteristics
Drain power dissipation PD (W)
Gate threshold voltage Vth (V)
Ambient temperature Ta (°C)
Drain-source ON resistance
RDS (ON) (mΩ)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Capacitance C (pF)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
Total gate charge Qg (nC)
Drain reverse current IDR (A)
(1)
(2)
0
0 50 100 150 200
0.5
1.0
1.5
2.0 Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
t = 10 s
(4)
(3)
0
−80 −40 0 40 80 120 160
20
40
60
80
100
Common source
Pulse test
4 V
VGS = 2.5 V
ID = 5 A 2.5 A, 1.2 A
ID = 5 A, .2.5 A, 1.2A
0.1
−0 −0.2 −0.4 −0.6 −0.8 −1 −1.4
1
10
100
−1.2
Common source
Ta = 25°C
Pulse test
VGS = 0 V
1
3
5
10
0.1 1 10 100
100
1000
10000
Ciss
Coss
Crss
Common source
Ta = 25°C
VGS = 0 V
f = 1 MHz 0
−80
0.4
1.0
1.4
−40 0 40 80 120 160
0.2
0.6
0.8
1.2
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
8
0
4
8
12
16
0 5 10 15 20
4
12
16
Common source
ID = 5 A
Ta = 25°C
Pulse test VDS
20
8
VDD = 16 V
20
VDD = 16 V
8
4
4
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2009-09-29
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Drain-source voltage VDS (V)
Drain current ID (A)
Safe operating area
Pulse width tw (S)
rth − tw
Normalized transient thermal impedance
rth (°C/W)
0.01 0.03 0.1 0.3 1 3 10 10030
0.01
0.03
0.05
0.1
0.3
0.5
1
3
5
10
30
100
50
* Single pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
ID max (pulse) *
10 ms *
1 ms *
VDSS max
Single-device value at dual
operation (Note 3b)
0.1
0.001 0.01 0.1 1 10 100 1000
1
10
100
1000
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
t = 10 s
(4)
(3)
(2)
(1)
Single pulse
TPC8208
2009-09-29
7
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
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WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AN D
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FOR A PARTICULAR PURPOSE, AC CURACY OF INFORMAT I ON, OR NONINF RINGEMEN T.
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
