PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Increased System Power
Density
PRODUCT FEATURES
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Popular SOT-227 Package
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
• Avalanche Energy Rated
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Snubber Diode
• Uninterruptible Power Supply (UPS)
• Induction Heating
• High Speed Rectifiers
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
APT2x61DQ100J 1000V 60A
APT2x60DQ100J 1000V 60A
053-4233 Rev B 7-2006
New Diode Data Sheet By Darel Bidwell
Anti-Parallel Parallel
2
1
32 3
41 4
APT2x60DQ100J APT2x61DQ100J
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
IRM
CT
UNIT
Volts
µA
pF
MIN TYP MAX
2.2 2.8
2.67
1.68
100
500
80
Characteristic / Test Conditions
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, VR = 200V
IF = 60A
IF = 120A
IF = 60A, TJ = 125°C
VR = 1000V
VR = 1000V, TJ = 125°C
DUAL DIE ISOTOP® PACKAGE
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (TC = 90°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Symbol
VR
VRRM
VRWM
IF(AV)
IF(RMS)
IFSM
EAVL
TJ,TSTG
UNIT
Volts
Amps
mJ
°C
APT2x61_60DQ100J
1000
60
77
540
20
-55 to 175
Microsemi Website - http://www.microsemi.com
SOT-227
ISOTOP
®
1
23
4
file # E145592
"UL Recognized"
APT2x61_60DQ100J
DYNAMIC CHARACTERISTICS
053-4233 Rev B 7-2006
New Diode Data Sheet By Darel Bidwell
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak TJ = PDM x ZθJC + TC
Duty Factor D = t1/t2
t2
t1
PDM
Note:
THERMAL AND MECHANICAL CHARACTERISTICS
MIN TYP MAX
- 36
- 235
- 445
- 5 -
- 285
- 2290
- 13 -
- 125
- 4170
- 50
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
trr
trr
Qrr
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
Test Conditions
IF = 60A, diF/dt = -200A/µs
VR = 667V, TC = 25°C
IF = 60A, diF/dt = -200A/µs
VR = 667V, TC = 125°C
IF = 60A, diF/dt = -1000A/µs
VR = 667V, TC = 125°C
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
Package Weight
Maximum Mounting Torque
Symbol
RθJC
VIsolation
WT
Torque
MIN TYP MAX
.56
2500
1.03
29.2
10
1.1
UNIT
°C/W
Volts
oz
g
lb•in
N•m
D = 0.9
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.148 0.238 0.174
0.006 0.0909 0.524
Dissipated Power
(Watts)
TJ (°C) TC (°C)
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
ZEXT
053-4233 Rev B 7-2006
APT2x61_60DQ100J
TYPICAL PERFORMANCE CURVES
TJ = 125°C
VR = 667V
30A
60A
120A
trr
Qrr
Qrr
trr
IRRM
350
300
250
200
150
100
50
0
60
50
40
30
20
10
0
Duty cycle = 0.5
TJ = 175°C
0 25 50 75 100 125 150 25 50 75 100 125 150 175
1 10 100 200
100
90
80
70
60
50
40
30
20
10
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
400
350
300
250
200
150
100
50
0
CJ, JUNCTION CAPACITANCE Kf, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/µs)
IF(AV) (A)
TJ, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
200
180
160
140
120
100
80
60
40
20
0
6000
5000
4000
3000
2000
1000
0
VF, ANODE-TO-CATHODE VOLTAGE (V) -diF/dt, CURRENT RATE OF CHANGE(A/µs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
-diF/dt, CURRENT RATE OF CHANGE (A/µs) -diF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
Qrr, REVERSE RECOVERY CHARGE IF, FORWARD CURRENT
(nC) (A)
IRRM, REVERSE RECOVERY CURRENT trr, REVERSE RECOVERY TIME
(A) (ns)
TJ = 175°C
TJ = -55°C
TJ = 25°C
TJ = 125°C
TJ = 125°C
VR = 667V
120A
60A
30A
TJ = 125°C
VR = 667V
120A
30A
60A
APT2x61_60DQ100J
053-4233 Rev B 7-2006
APT10035LLL
4
3
1
2
5
5
Zero
1
2
3
4
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IF - Forward Conduction Current
IRRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 9. Diode Test Circuit
Figure 10, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
diF/dt Adjust
30µH
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
Anode 1
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4 H100
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
Anode 2
Anti-parallel Parallel
Cathode 1
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Cathode 2
Anode 1
Cathode 2 Anode 2
Cathode 1
SOT-227 (ISOTOP®) Package Outline
APT2X60DQ100J APT2X61DQ100J
ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
