pists inant MITSUBISHI Nch POWER MOSFET FS2VS-18A HIGH-SPEED SWITCHING USE FS2VS-18A OUTLINE DRAWING Dimensions in mm wee 1OSMAX. \ * \. = : (eS nn 42 20 [oO : aT en : 3 5/2 : 0 | Pa i 5 : <7 : 08 : i rd 4 i ae! J so i ad i GATE } 2 DRAIN 3, SOURCE OVDSS cece eee eect ec ee eee e erste tenet ee rne es 900V # DRAIN 1 @ PDS (ON) (MAX) veret ttre rete ere ce eee ee eee eeees 7.32 [OD ccc eect e tence ence tebe tees tenes tenant enaaes 2A TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (Tc = 25C) Symbol Parameter Conditions Ratings Unit Vpss Drain-source voltage Vas = 0V 900 Vv Vass Gate-source yoltage Vos = 0V +30 Vv ID Drain current 2 A IDM Drain current (Pulsed) 6 A Pb Maximum power dissipation 85 Ww Teh Channel temperature 55 ~ +150 C Tstg Storage ternperature 55 ~ +150 C _ Weight Typical value 1.2 g 2 ~ 570 MITSUBISHI ELECTRICMITSUBISHI Nch POWER MOSFET FS2VS-18A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (ch = 25C) Symbol Parameter Test conditions - Limits Unit Min, Typ. Max. VeR} DSS | Drain-source breakdown voltage | 1D = 1mA, VGS = OV 900 _ _ Vv V (8A) GSS _| Gate-source breakdown voltage { iaS=+100pA, Vos = OV 30 _- - v lass Gate leakage current VGS = +25V, Vos = OV = _ +10 pA lpss Drain current Vos = 900V, Vas = OV > _ 1 mA VGS (thy Gate-source threshold voltage ID = 1mA, Vos = 10V 2 3 4 Vv rDS (ON) | Drain-source on-state resistance | 10 = 1A, VGS = 10V _ 5.62 7.30 Q Vps (ON) | Drain-source on-state voltage | 1D = 1A, VGS = 10V = 5.62 7.30 Vv | yts | Forward transfer admittance lp = 1A, Vos = 10V 1.2 2.0 ~ s Ciss Input capacitance ~~ 460 _ pF Cass Output capacitance VDS = 25V, VGS = OV, f = 1MHz = 45 = pF Cres Reverse transfer capacitance ~ 8 _ pF ta (on) Turn-on delay time ~ 11 ~~ ns tr Rise time VoD = 200V, Ip = 1A, Vas = 10V, _ 13 _ ns td (off) Turn-off delay time RGEN = RGS = 50Q _ 5 _ ns. tt Fall time ~~ 22 _ ns VsD Source-drain voltage IS = 1A, Vas = 0V _ 1.0 1.5 Vv Rin (ch-c) | Thermal resistance Channel to case _ _ 1.47 CW PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 100 10! g 10 = tw 10us = 3 jit a 8 = > a 2 100us 3 . - 60 i 5 ims =< ie a e 3 ao a 40 a toms a 2 10-1 100ms i = 7 pc qu x 5 = 20 a i" o 3 Te = 28C a 27> Single Pulse 0 io 10-2 0 50 100 150 200 100 23 57101 23 57102 23 57103 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vops (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) Vas = 20V 10V 5.0 2.0 Po = 85Wt VGS = 20V_ To = 25C 10V Pulse Test =z 40 =z 16 8 2 5 30 5 12 iw my] fem c 5 5 Bo 20 Bb 08 Zz ~ 2 < To = 26C FS xc C= 28 a 1.0 Pulse Test a 0.4 0 av O Q 10 20 30 40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vps (V) MITSUBISHI 2-571 ELECTRICMITSUBISHI Nch POWER MOSFET FS2VS-18A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS. GATE-SOURCE VOLTAGE DRAIN CURRENT (TYPICAL) (TYPICAL) 50 Te = 26C 10 To = 25C Vas = 10V Pulse Test Pulse Test rE 40 FG 8 IS <i > io = 4A z zo Zo Oe 30 Of 6 Lud Lud O Ow Sy Zo a5 2 og 4 Qe @ Ze 22 z> 10 ew 2 a a 0 0 0 4 8 12 16 20 102 23 5710-7123 5710 23 5710! GATE-SOURCE VOLTAGE V6s (V) DRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 101 Te = 25C Vps = 10V Vos = SOV Pulse Test _~ Pulse Test 5 < ae 5 22 2 Te = 25C iui Ow 75C ira FO 100 a2 3 ee 7 < ga x cra 3 2 G 10-7 Q 4 8 12 16 20 107 2 3 7100 2 3 5 710! GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 3 Teh = 25C 2 Von = 200V Vas = 10V c e 102 RGEN = Ras = 500 w & lw 7 3 8 = 5 tatotty So - OY 3 <6 z a tr a0 x= << . oO tr Og E 6 = 10! tdion) Toh = 25C Oo 7 f= 7MHz 5 Vas =0V 0 3 23 57109 23 57101 23 57102 2 1O-1 2 3 6 7100 2 3 5 710 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN CURRENT Ip (A) 2 - 572 MITSUBISHI ELECTRICDRAIN-SOURCE ON-STATE RESISTANCE rps (ON) (tC) ODRAIN-SOURCE BREAKDOWN VOLTAGE V (er) pss (C) DRAIN-SOURCE ON-STATE RESISTANCE rs (on) (25C) GATE-SOURCE VOLTAGE V&s {V) DRAIN-SOQURCE BREAKDOWN VOLTAGE V (BR) 085 (25C) 20 16 12 10! NO ON 199 Ny oO GN 10-7 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) Toh = 25C Ip =2A Vps = 250V 0 4 8 12 16 20 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 10V to = 1/2!D Pulse Test ~50 0 50 100 150 CHANNEL TEMPERATURE Teh (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 0V lo=1mA -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE = 2th (che) (C/W) 10 moo and Oca iN 10- 10~ SOURCE CURRENT ts (A) GATE-SOURCE THRESHOLD VOLTAGE VGsS (thy (V) MO CsA a n MITSUBISHI Nch POWER MOSFET FS2VS-18A HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) Ves = QV Pulse Test 4 Te = 126C 75C 2 26C 0 0 0.8 1.6 24 3.2 4.0 SOURCE-DRAIN VOLTAGE Vsp (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vos = 10V i= 1mAA i 50 0 50 100 150 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 10423 5710-923 5710-223 5710-123 5710923 5710123 5710? PULSE WIDTH tw (3) 9 MITSUBISHI 2 - 573 ELECTRIC ,