For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
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HMC741ST89E
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
v02.0710
General DescriptionFunctional Diagram
The HMC741ST89E is an InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplier covering 0.05 to 3 GHz. Packaged in an
industry standard SOT89, the amplier can be used
as a cascadable 50 Ohm RF or IF gain stage as well
as a PA or LO driver with up to +18.5 dBm output
power. The HMC741ST89E offers 20 dB of gain with
a +42 dBm output IP3 at 200 MHz, and can operate
directly from a +5V supply. The HMC741ST89E
exhibits excellent gain and output power stability over
temperature, while requiring a minimal number of
external bias components.
P1dB Output Power: +18.5 dBm
Gain: 20 dB
Output IP3: +42 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V
Industry Standard SOT89 Package
Robust 1000V ESD, Class 1C
Stable Current Over Temperature
Active Bias Network
Typical Applications
The HMC741ST89E is ideal for:
• Cellular/3G & WiMAX/4G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
Electrical Specications, Vcc = 5V, TA = +25° C
Features
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 150 240 50 - 1000 50 - 3000 MHz
Gain 19 20 19 21 16 20 12 19 dB
Gain Flatness ±0.3 ±0.3 ±0.3 ±2.6 dB
Gain Variation over Temperature 0.004 0.004 0.004 0.01 0.004 0.01 dB/ °C
Input Return Loss 16 16 16 12 dB
Output Return Loss 17 17 17 12 dB
Reverse Isolation 25 25 25 26 dB
Output Power for 1 dB Compression
(P1dB) 16 18.8 16 18.8 16 18.8 14 16 dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone,
1 MHz spacing)
40.5 40.5 40.5 30 dBm
Noise Figure 2.5 2.5 2.5 2.5 dB
Supply Current (Icq) 96 96 96 96 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
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HMC741ST89E
v02.0710
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
Output IP3 vs. Temperature
Gain & Return Loss Gain vs. Temperature
Output IP3 vs. Vcc
Noise Figure vs. Temperature
Output IP3 vs. Output Power
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
0 0.2 0.4 0.6 0.8 1
S21
S11
S22
FREQUENCY (GHz)
RESPONSE (dB)
20
25
30
35
40
45
50
0 0.2 0.4 0.6 0.8 1
+25C
+85C
-40C
FREQUENCY (GHz)
IP3 (dBm)
20
25
30
35
40
45
50
0 0.2 0.4 0.6 0.8 1
4.5V
5.0V
5.5V
FREQUENCY (GHz)
IP3 (dBm)
0
5
10
15
20
25
30
35
40
45
50
-5 0 5 10 15
100MHz
400MHz
1GHz
Pout (dBm)
IP3 (dBm)
0
1
2
3
4
5
6
7
8
0 0.2 0.4 0.6 0.8 1
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1
+25C
+85C
-40C
FREQUENCY (GHz)
GAIN (dB)
IF Band Performance
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
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HMC741ST89E
v02.0710
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
Gain & Return Loss
Output Return Loss vs. Temperature
Input Return Loss vs. Temperature
Gain vs. Temperature
Gain vs. Vcc
Input Return Loss vs. Vcc
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
0 0.5 1 1.5 2 2.5 3
S21
S11
S22
FREQUENCY (GHz)
RESPONSE (dB)
0
5
10
15
20
25
0 0.5 1 1.5 2 2.5 3
4.5V
5.0V
5.5V
FREQUENCY (GHz)
GAIN (dB)
-30
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3
+25C
+85C
-40C
FREQUENCY (GHz)
RETURN LOSS (dB)
-30
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3
4.5V
5.0V
5.5V
FREQUENCY (GHz)
RETURN LOSS (dB)
-30
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3
+25C
+85C
-40C
FREQUENCY (GHz)
RETURN LOSS (dB)
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3
+25C
+85C
-40C
FREQUENCY (GHz)
GAIN (dB)
Broadband Performance
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
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HMC741ST89E
v02.0710
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
Output Return Loss vs. Vcc
Noise Figure vs. Vcc
Reverse Isolation vs. Vcc
Noise Figure vs. Temperature
Reverse Isolation vs. Temperature
Output IP3 vs. Temperature
-30
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3
4.5V
5.0V
5.5V
FREQUENCY (GHz)
RETURN LOSS (dB)
-30
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3
+25C
+85C
-40C
FREQUENCY (GHz)
REVERSE ISOLATION (dB)
0
5
10
15
20
25
30
35
40
45
50
0 0.5 1 1.5 2 2.5 3
+25C
+85C
-40C
FREQUENCY (GHz)
IP3 (dBm)
0
1
2
3
4
5
6
7
8
0 0.5 1 1.5 2 2.5 3
4.5V
5.0V
5.5V
NOISE FIGURE (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3
4.5V
5.0V
5.5V
FREQUENCY (GHz)
REVERSE ISOLATION (dB)
0
1
2
3
4
5
6
7
8
0 0.5 1 1.5 2 2.5 3
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
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HMC741ST89E
v02.0710
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
Output IP3 vs. Vcc
P1dB vs. Temperature
Power Compression @ 500 MHz
Current vs. Temperature
Psat vs. Temperature
Power Compression @ 2 GHz
0
5
10
15
20
25
30
35
40
45
50
0 0.5 1 1.5 2 2.5 3
4.5V
5.0V
5.5V
FREQUENCY (GHz)
IP3 (dBm)
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3
+25C
+85C
-40C
FREQUENCY (GHz)
Psat (dBm)
-5
0
5
10
15
20
25
-20 -17 -14 -11 -8 -5 -2 1
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), GAIN (dB), PAE (%)
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3
+25C
+85C
-40C
FREQUENCY (GHz)
P1dB (dBm)
-5
0
5
10
15
20
25
-20 -17 -14 -11 -8 -5 -2 1
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), GAIN (dB), PAE (%)
40
60
80
100
120
140
4.5 4.75 5 5.25 5.5
+25C
+85C
-40C
VOLTAGE (V)
CURRENT (mA)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
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HMC741ST89E
v02.0710
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
Outline Drawing
Part Number Package Body Material Lead Finish MSL Rating Package Marking [1]
HMC741ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H741
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reow temperature of 260 °C
Package Information
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +5.5 Vdc
RF Input Power (RFIN) +15 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 10.22 mW/°C above 85 °C) 0.66 W
Thermal Resistance
(junction to lead) 97.83 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HMB) Class 1C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
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HMC741ST89E
v02.0710
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
Application Circuit
Pin Descriptions
Pin Number Function Description Interface Schematic
1 IN This pin is DC coupled.
An off chip DC blocking capacitor is required.
3 OUT RF output and DC Bias (Vcc) for the output stage.
2, 4 GND These pins and package bottom
must be connected to RF/DC ground.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
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Evaluation PCB
The circuit board used in the nal application
should use RF circuit design techniques. Signal
lines should have 50 Ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
List of Materials for Evaluation PCB 124390 [1]
Item Description
J1, J2 PCB Mount SMA Connector
J3, J4 DC Pin
C1, C2 470 pF Capacitor, 0402 Pkg.
C3 100 pF Capacitor, 0402 Pkg.
C4 1000 pF Capacitor, 0603 Pkg.
C5 2.2 µF Capacitor Tantalum
L1 820 nH Inductor, 0603 Pkg.
U1 HMC741ST89E
PCB [2] 119392 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: FR4
HMC741ST89E
v02.0710
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz